PHILIPS BYV29F-400 Rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
BYV29F, BYV29X series
SYMBOL
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
k
1
VF ≤ 1.03 V
a
2
IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
PIN
SOD113
DESCRIPTION
case
1
cathode (k)
2
anode (a)
tab
case
isolated
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
BYV29F/BYV29X
VRRM
VR
Peak repetitive reverse voltage
Continuous reverse voltage
IF(AV)
Average forward current2
IFSM
Non-repetitive peak forward
current
Tstg
Tj
Storage temperature
Operating junction temperature
Ths ≤ 138˚C1
square wave; δ = 0.5;
Ths ≤ 90 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
-
MAX.
-300
300
300
-400
400
400
UNIT
-500
500
500
V
V
-
9
A
-
100
110
A
A
-40
-
150
150
˚C
˚C
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Peak isolation voltage from
all terminals to external
heatsink
SOD100 package; R.H. ≤ 65%; clean and
dustfree
MIN.
Visol
Cisol
TYP. MAX. UNIT
-
-
1500
V
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
-
-
2500
V
Capacitance from pin 2 to
external heatsink
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
5.5
7.2
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.90
1.05
1.20
2.0
0.1
40
1.03
1.25
1.40
50
0.35
60
V
V
V
µA
mA
nC
-
50
60
ns
-
4.0
5.5
A
-
2.5
-
V
f = 1 MHz
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
without heatsink compound
in free air.
Rth j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
February 1999
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
I
dI
F
BYV29F, BYV29X series
12
F
dt
Q
I
95
1.9
2.2
8
rr
6
117
4
128
2
139
100%
10%
s
106
2.8
4
rrm
0
0
2
4
IF(AV) / A
6
8
150
10
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.1. Definition of trr, Qs and Irrm
I
84
a = 1.57
10
time
R
Ths(max) / C
Vo = 0.89V
Rs = 0.019 Ohms
t
I
BYV29
PF / W
trr / ns
1000
F
IF=10 A
100
1A
time
VF
10
V
Tj = 25 C
Tj = 100C
fr
VF
1
1
Fig.2. Definition of Vfr
15
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Ths(max) / C
BYV29
PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
100
10
dIF/dt (A/us)
time
10
67.5
Irrm / A
D = 1.0
IF=10A
0.5
1
95
10
0.2
IF=1A
0.1
5
tp
I
D=
T
0
0
5
IF(AV) / A
10
tp
T
0.1
122.5
t
0.01
150
15
1
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x √D.
February 1999
Tj = 25 C
Tj = 100C
10
-dIF/dt (A/us)
100
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
BYW29
IF / A
30
10
Transient thermal impedance, Zth j-hs (K/W)
Tj=150 C
Tj=25 C
1
20
0.1
typ
max
10
PD
0.01
0
0.5
0
1
VF / V
1.5
0.001
1us
2
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1000
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
10s
Fig.9. Transient thermal impedance Zth j-hs= f(tp)
Qs / nC
IF = 10 A
100
2A
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C
February 1999
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
a
0.9
0.7
M
0.55 max
1.3
5.08
top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
MECHANICAL DATA
Dimensions in mm
10.3
max
4.6
max
Net Mass: 2 g
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
6
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.400
Similar pages