HP ATF-13336-TR1 2-16 ghz low noise gallium arsenide fet Datasheet

2 – 16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13336
Features
Description
• Low Noise Figure:
1.4␣ dB Typical at 12␣ GHz
The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective microstrip package. Its premium noise
figure makes this device appropriate for use in low noise amplifiers
operating in the 2-16␣ GHz
frequency range.
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dBm Typical P 1 dB at
12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
P1 dB
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
G1 dB
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
Units
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
dB
dB
dB
dB
dB
5-36
8.0
Typ. Max.
1.2
1.4
1.6
11.5
9.0
7.5
f = 12.0 GHz dBm
17.5
f = 12.0 GHz
8.5
dB
1.6
mmho
25
55
mA
40
50
90
V
-4.0
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
5965-8724E
Min.
ATF-13336 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5mW/°C for
TCASE > 85°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
θjc = 400°C/W; TCH = 150°C
1␣ µm Spot Size[5]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-13336-TR1
ATF-13336-STR
1000
10
7"
strip
ATF-13336 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
4.0
6.0
8.0
12.0
14.0
0.8
1.1
1.2
1.4
1.6
.63
.47
.40
.52
.57
93
138
-153
-45
-2
.27
.10
.20
.88
1.3
ATF-13336 Typical Performance, TA = 25°C
14
14
10
2.5
6
NFO
NFO (dB)
NFO (dB)
1.5
1.0
0.5
8.0
10.0
12.0 14.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
20
MSG
10
8
2.0
0
6.0
GA
8
GAIN (dB)
GA
12
GA (dB)
12
25
GA (dB)
16
15
MAG
10
2.0
|S21|2
NFO
5
1.5
1.0
0
10
20
30
40
50
60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
5-37
0
2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S11
Mag.
.96
.88
.86
.79
.69
.60
.54
.56
.56
.58
.63
.65
.66
.70
.72
Ang.
-51
-75
-96
-117
-142
-178
141
103
74
44
20
3
-7
-19
-34
dB
10.6
10.3
10.1
9.9
10.2
10.1
9.8
8.9
8.3
7.6
6.7
6.0
5.5
4.9
4.4
S21
Mag.
3.39
3.28
3.19
3.13
3.22
3.21
3.10
2.80
2.60
2.39
2.17
2.00
1.89
1.76
1.66
Ang.
127
106
86
66
46
21
-4
-26
-48
-68
-90
-108
-126
-144
-175
A model for this device is available in the DEVICE MODELS section.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
133
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
DRAIN
3
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-38
dB
-27.1
-23.4
-22.6
-20.6
-18.9
-17.6
-17.3
-16.7
-16.5
-16.8
-17.5
-18.3
-18.9
-19.0
-19.2
S12
Mag.
.044
.060
.074
.093
.114
.132
.137
.147
.150
.145
.133
.121
.114
.112
.110
S22
Ang.
57
33
25
12
1
-18
-33
-48
-63
-78
-95
-107
-121
-129
-142
Mag.
.61
.58
.57
.54
.49
.42
.31
.21
.09
.07
.16
.19
.19
.16
.14
Ang.
-41
-51
-57
-65
-79
-97
-112
-121
-145
89
43
21
-4
-28
-32
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