Anpec APM4410K N-channel enhancement mode mosfet Datasheet

APM4410
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V
RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V
•
•
•
High Density Cell Design
Reliable and Rugged
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
SO-8 Package
SO − 8
Applications
•
D
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
Ordering and Marking Information
S
N-Channel MOSFET
APM 4410
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
APM 4410 K :
APM 4410
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID
Maximum Drain Current – Continuous
11.5
IDM
Maximum Drain Current – Pulsed
PD
Maximum Power Dissipation
50
TA=25°C
2.5
TA=100°C
1.0
Unit
V
A
W
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
1
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APM4410
Thermal Characteristics
Symbol
TJ
Parameter
Rating
Maximum Junction Temperature
150
T STG
Storage Temperature Range
R θJA
Thermal Resistance - Junction to Ambient
Electrical Characteristics
Symbol
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
VSD
50
°C/W
(TA=25°C unless otherwise noted)
Test Condition
Drain-Source Breakdown Voltage
VGS =0V, ID=250µA
Zero Gate Voltage Drain Current
VDS =24V, VGS =0V
Gate Threshold Voltage
VDS =VGS, ID=250µA
Gate Leakage Current
VGS =±20V, VDS =0V
Drain-Source On-state Resistance b
b
°C
-55 to 150
Parameter
Diode Forward Voltage
Unit
APM4410
Unit
Min. Typa. Max.
30
1
VGS =10V, ID=11.5A
VGS =4.5V, ID=5A
ISD=2.3A, VGS =0V
V
1
uA
3
V
±100
nA
9
11
14.5
16
0.6
1.2
mΩ
V
Dynamica
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS =15V, VGS =10V,
ID=10A
VDD=15V, RL=15Ω,
ID=1A , V GEN=10V,
RG=6Ω,
VGS =0V, VDS=25V
Frequency = 1.0MHZ
45
60
10
nC
8
16
25
24
35
78
110
42
80
ns
2000
400
pF
220
Notes
a
b
: Guaranteed by design, not subject to production testing
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
2
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APM4410
Typical Characteristics
Output Characteristics
Transfer Characteristics
50
50
40
40
IDS-Drain Current (A)
IDS-Drain Current (A)
VGS=5,6,7,8,9,10V
VGS=4V
30
30
20
20
10
TJ=25°C
TJ=-55°C
TJ=125°C
10
V GS=3V
0
0
2
4
6
8
0
10
0
1
VDS-Drain-to-Source Voltage (V)
2
3
4
5
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.4
0.020
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250µA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
VGS=4.5V
0.012
V GS=10V
0.008
0.004
0.000
100 125 150
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
0.016
0
5
10
15
20
25
30
35
IDS-Drain Current (A)
3
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APM4410
Typical Characteristics Cont.
On-Resistaence vs. Junction Temperature
0.10
2.00
IDS=11.5A
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS (ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
0
2
4
6
8
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
10
Gate Voltage (V)
0
25
50
75
100 125 150
Capacitance Characteristics
3000
10
VDS=15V
IDS=11.5A
2500
8
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
-25
Tj-Junction Temperature (°C)
Gate Charge
6
4
2
0
VGS=10V
IDS=11.5A
Ciss
2000
1500
1000
Coss
500
0
9
18
27
36
0
45
0
5
10
15
20
25
30
VDS-Drain-to-Source Voltage (V)
QG-Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
Crss
4
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APM4410
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
Single Pulse Power
50
ISD-Source Current (A)
80
Power (W)
60
10
TJ=25°C
TJ=150°C
40
20
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
VSD-Source to Drain Voltage
1
10
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50°C/W
3. TJM-TA=PDMZthJA
4. Surface Mounted
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
5
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APM4410
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
1. 27B S C
0. 50B S C
8°
8°
6
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APM4410
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb).
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4410
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
W
Bo
F
Ao
D1
Ko
T2
J
C
A
B
T1
SOP-8
A
330±1
Application
SOP-8
F
5.5 ± 0.1
Application
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
8
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APM4410
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002
9
www.anpec.com.tw
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