CEL NE722S01-T1B1 Necs c to x band n-channel gaas mes fet Datasheet

NEC's C TO X BAND
N-CHANNEL GaAs MES FET NE722S01
OUTLINE DIMENSION
FEATURES
• HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
(Units in mm)
PACKAGE OUTLINE SO1
• OUTPUT POWER (at 1 dB compression):
15 dB TYP at f = 12 GHz
2.0 ± 0.2
• LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
2.
1
0
±
0.
2
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
2
P
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
4
3
0.5
TYP
2.0±0.2
1. Source
2. Drain
3. Source
4. Gate
0.65 TYP
1.9 ± 0.2
1.6
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
0.125 ± 0.05
1.5 MAX
APPLICATIONS
0.4 MAX
4.0 ± 0.2
• C to X band low noise amplifiers
• C to X band oscillators
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE722S01
S01
UNITS
MIN
TYP
MAX
IGSO
Gate to Source Leak Current, VGS = -5 V
uA
–
1.0
10
IDSS
Saturated Drain Current, VDS = 3 V, VGS = 0 V
mA
60
90
120
VGS
Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA
V
-0.5
–
-4.0
gm
Transconductance, VDS = 3 V, IDS = 30 mA
mS
20
45
–
GS
Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz
dB
–
6
–
P1dB
Output Power at 1 dB Gain Compression Point at
VDS = 3 V, IDS = 30 mA, f = 12 GHz
dBm
15.0
NF
Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz
dB
–
0.9
–
Ga
Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz
dB
–
12
_
California Eastern Laboratories
NE722S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
5.0
VGS
Gate to Source Voltage
V
-5.0
VGD
Gate to Drain Voltage
V
-6.0
IDS
Drain Current
mA
IDSS
PT
Total Power Dissipation
mW
250
PIN
Input Power
mW
40
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
PART NUMBER
NE722S01
SYMBOLS
PARAMETERS
Drain to Source Voltage
VDS
IDS
Drain Current
UNITS MIN TYP MAX
V
3
4
mA
30
40
ORDERING INFORMATION
PART NUMBER
SUPPLY FORM
NE722S01-T1
Tape & Reel 1000 pcs/reel
NE722S01-T1B1
Tape & Reel 4000 pcs/reel
MARKING
P
Note:
1. Available if quantity is over 100k per month
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
100
400
80
VGS = 0.0 V
Drain Current, IDS (mA)
Total Power Dissipation, (PT) mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
200
100
-0.5 V
60
40
-1.0 V
20
-2.0 V
0
50
100
150
200
250
1
0
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
3
4
5
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
20
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, |S21S|2 (dB)
VDS = 3.0 V
80
Drain Current, IDS (mA)
2
Drain to Source Voltage, VDS (V)
60
40
20
0
-2.0
-4.0
0
VDS = 3 V
IDS = 10 mA
MSG.
16
12
|S21S|
2
MAG.
8
4
|S21| (K ± K 2 - 1 ).
|S12|
When K ≤ 1, MAG is undefined and MSG values are used.
2
2
2
|S21|
MSG =
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG =
0
0.5
Gate to Source Voltage, VGS (V)
1
5
10 14 20
50
Frequency, f (GHz)
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE722S01
TYPICAL PERFORMANCE CURVES
OUTPUT POWER vs. INPUT POWER
20
Output Power, Pout (dBm)
VDS = 3.0 V, ID = 30 mA
fin = 12 GHz
15
10
5
0
-5
-10
-15
-10
-5
0
5
Input Power, Pin (dBm)
10
15
(TA = 25°C)
NE722S01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE722S01
VDS = 3.0 V, IDS = 10 mA
FREQUENCY
GHz
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
S11
MAG
0.912
0.876
0.828
0.784
0.737
0.699
0.660
0.620
0.583
0.547
0.516
0.496
0.500
0.510
0.526
0.540
0.553
0.566
0.576
0.592
0.608
0.640
0.665
0.693
0.718
0.744
0.759
0.756
0.750
0.738
0.728
0.721
0.721
S21
ANG
-44.0
-56.1
-68.0
-79.3
-89.5
-99.3
-109.0
-119.0
-130.6
-143.8
-158.5
-173.7
172.6
159.9
148.4
138.4
129.9
120.6
111.3
101.8
92.8
85.2
79.1
73.3
69.3
64.8
59.6
55.5
51.0
45.4
40.9
36.4
32.5
MAG
3.100
3.037
2.935
2.819
2.696
2.589
2.499
2.420
2.355
2.283
2.196
2.098
2.016
1.920
1.834
1.749
1.676
1.608
1.542
1.470
1.401
1.325
1.256
1.183
1.111
1.045
0.966
0.893
0.839
0.777
0.714
0.676
0.624
S12
ANG
136.2
124.9
113.9
103.7
94.2
85.3
76.6
67.9
59.4
50.1
41.0
32.2
23.7
15.3
7.2
-0.6
-7.9
-15.8
-23.5
-31.1
-38.4
-45.7
-52.7
-59.7
-66.4
-73.3
-79.7
-85.4
-91.0
-96.7
-101.5
-105.7
-109.8
MAG
0.077
0.091
0.105
0.115
0.124
0.130
0.136
0.140
0.146
0.148
0.151
0.149
0.152
0.150
0.151
0.151
0.152
0.156
0.157
0.157
0.158
0.159
0.160
0.158
0.162
0.163
0.159
0.159
0.160
0.158
0.158
0.156
0.158
S22
ANG
59.0
51.2
42.9
36.2
30.0
24.7
19.1
14.1
9.1
3.8
-1.6
-6.6
-10.1
-13.6
-17.3
-20.3
-23.2
-26.3
-29.8
-32.9
-35.7
-38.0
-41.3
-44.5
-47.0
-49.5
-53.4
-55.8
-57.6
-61.4
-63.1
-65.9
-68.4
MAG
0.659
0.629
0.597
0.570
0.546
0.529
0.514
0.495
0.475
0.447
0.408
0.366
0.331
0.298
0.274
0.265
0.275
0.297
0.312
0.328
0.340
0.339
0.341
0.356
0.386
0.421
0.474
0.516
0.563
0.601
0.624
0.628
0.625
ANG
-30.2
-38.0
-46.4
-53.5
-60.9
-67.2
-73.6
-79.6
-85.2
-91.5
-97.0
-103.7
-110.8
-120.4
-133.2
-147.9
-160.7
-172.7
178.5
171.0
163.5
155.6
145.5
133.8
122.3
111.6
104.4
98.7
95.8
92.8
89.4
86.9
82.2
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE722S01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE722S01
VDS = 3.0 V, IDS = 30 mA
FREQUENCY
GHz
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
S11
MAG
0.896
0.851
0.799
0.753
0.705
0.666
0.625
0.586
0.553
0.521
0.497
0.489
0.501
0.519
0.540
0.562
0.575
0.589
0.602
0.619
0.633
0.666
0.690
0.715
0.740
0.769
0.780
0.778
0.774
0.759
0.750
0.739
0.741
S21
ANG
-48.3
-61.5
-74.1
-86.1
-97.0
-107.3
-117.5
-128.3
-140.6
-154.2
-169.4
175.8
162.9
151.0
140.4
131.2
123.2
114.3
105.5
96.4
88.0
80.9
75.2
70.0
66.4
62.0
57.0
52.5
48.2
42.7
38.1
33.9
30.2
MAG
3.721
3.606
3.449
3.275
3.102
2.957
2.834
2.724
2.627
2.522
2.402
2.281
2.176
2.062
1.963
1.865
1.786
1.709
1.637
1.554
1.480
1.400
1.321
1.241
1.169
1.101
1.021
0.945
0.888
0.824
0.767
0.721
0.672
S12
ANG
134.0
122.4
111.3
101.1
91.6
82.7
74.0
65.3
56.8
47.7
39.0
30.5
22.5
14.5
6.8
-0.7
-7.8
-15.4
-22.9
-30.2
-37.4
-44.5
-51.1
-57.9
-64.2
-70.8
-77.1
-82.6
-88.0
-93.4
-98.3
-102.3
-106.6
MAG
0.063
0.077
0.086
0.095
0.102
0.106
0.111
0.115
0.122
0.125
0.128
0.128
0.131
0.135
0.139
0.142
0.146
0.151
0.156
0.161
0.163
0.168
0.171
0.173
0.173
0.174
0.178
0.175
0.176
0.176
0.174
0.175
0.176
S22
ANG
59.9
53.2
45.1
39.6
34.1
29.5
24.9
20.6
17.0
12.6
8.5
5.0
1.8
-1.2
-3.4
-6.8
-9.9
-12.8
-16.7
-20.5
-23.9
-27.4
-30.5
-33.9
-37.3
-41.0
-45.3
-48.6
-51.4
-56.1
-58.3
-61.1
-63.3
MAG
0.547
0.519
0.489
0.464
0.443
0.431
0.419
0.406
0.390
0.366
0.334
0.296
0.267
0.234
0.209
0.206
0.221
0.246
0.265
0.285
0.299
0.303
0.307
0.326
0.358
0.396
0.450
0.494
0.540
0.578
0.601
0.604
0.599
ANG
-29.6
-37.4
-45.4
-52.6
-59.5
-65.5
-71.5
-76.9
-82.2
-88.2
-93.4
-99.7
-106.8
-117.8
-132.7
-150.0
-164.3
-177.2
173.7
166.1
158.1
149.9
139.1
127.4
116.2
106.2
99.5
94.8
92.0
89.4
86.3
84.0
79.2
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE722S01
NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Rgx
1 ohms
Q1
0.5nH
Rdx
1 ohms
0.71nH
CGS_PKG
0.08pF
Lsx
0.13nH
CDS_PKG
0.1PF
Rsx
0.01 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-2.24
RG
8
VTOSC
0
RD
UNITS
Parameter
Units
time
seconds
0.5
capacitance
farads
ALPHA
8
RS
6
inductance
henries
BETA
0.055
RGMET
0
resistance
ohms
TQGAMMA
0.04
TNOM
27
voltage
volts
TQGAMMAAC
0.05
XTI
3
current
amps
Q
1.5
EG
1.43
TQDELTA
0.25
VTOTC
0
VBI
1
BETATCE
0
IS
1e-14
FFE
1
N
1.3
FNC(2)
150e-6
RIS
0
R
0.5
RID
0
P
1
TAU
3e-12
C
0.9
CDS
0.19e-12
RDB
250
CBS
1e-9
CGS
0.92e-12
CGD
0.05e-12
DELTA1
0.3
DELTA2
0.3
FC
0.5
VBR
Infinity
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 2 V to 4 V, ID = 10 mA to 40 mA
Date:
02/2002
(1) ADS TOM Model
(2) To simulate phase noise using AF/KF: AF = 1.5
KF = 2e-10
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
07/01/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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