SAVANTIC MJE800 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
MJE800/801/802/803
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type MJE700/701/702/703
·High DC current gain
·DARLINGTON
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
MJE800/801
VCBO
Collector-base voltage
60
Open base
MJE802/803
VEBO
Emitter-base voltage
V
80
MJE800/801
Collector-emitter voltage
UNIT
60
Open emitter
MJE802/803
VCEO
VALUE
V
80
Open collector
5
V
4
A
0.1
A
40
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
MJE800/801/802/803
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
VCE(sat)-1
VCE(sat)-2
VBE-1
PARAMETER
Collector-emitter
breakdown voltage
Collector-emitter
saturation voltage
CONDITIONS
MJE800/801
TYP.
MAX
60
V
IC=50mA;IB=0
80
MJE802/803
MJE800/802
UNIT
IC=1.5A ;IB=30mA
2.5
V
MJE801/803
IC=2A ;IB=40mA
2.8
Collector-emitter saturation voltage
IC=4A ;IB=40mA
3.0
V
2.5
V
3.0
V
100
µA
100
500
µA
2
mA
Base-emitter
on voltage
VBE-2
Base-emitter
on voltage
ICEO
Collector
cut-off current
MJE800/802
IC=1.5A ; VCE=3V
MJE801/803
IC=2A ; VCE=3V
IC=4A ; VCE=3V
MJE800/801
VCE=60V; IB=0
MJE802/803
VCE=80V; IB=0
ICBO
Collector cut-off current
VCB=Rated BVCEO; IE=0
TC=100
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
MJE800/802
DC current gain
IC=1.5A ; VCE=3V
750
MJE801/803
hFE-2
MIN
IC=2A ; VCE=3V
IC=4A ; VCE=3V
2
100
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
MJE800/801/802/803
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