SeCoS MMBT2907Q General purpose transistor Datasheet

MMBT2907Q
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
D
D1
* Features
A
E
E1
SOT-89
b1
1
Power dissipation
2
PCM : 1.25 W (Temp.= 25 C)
b
e
C
e1
Collector current
ICM
L
3
O
1.B AS E
2.C OLLE C T OR
: -0.6 A
Symbol
3
3.E MIT T E R
Collector-base voltage
V(BR)CBO : -60 V
Operating & Storage junction Temperature
O
O
Tj, Tstg : -55 C~ +150 C
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.360
0.560
0.014
0.022
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.400
1.800
0.055
0.071
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
1.500TYP
e
0.167
0.060TYP
e1
2.900
3.100
0.114
0.122
L
0.900
1.100
0.035
0.043
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= -10μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
MIN
MAX
UNIT
-60
V
Ic= -10mA, IB=0
-60
V
V(BR)EBO
IE=-10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50 V , IE=0
-0. 01
μA
Emitter cut-off current
IEBO
VEB= -3V ,
-0. 01
μA
hFE(1)
VCE=-1V, IC= -0.1mA
75
hFE(2)
VCE=-1V, IC= -1mA
100
hFE(3)
VCE=-1V, IC=-10mA
100
hFE(4)
VCE=-2V, IC= -150mA
100
hFE(5)
VCE=-2V, IC=-500mA
50
VCE(sat)1
IC=-150 mA, IB=-15mA
-0.4
V
VCE(sat)2
IC=-500 mA, IB=- 50mA
-1.6
V
VBE(sat)1
IC=-150 mA, IB=-15mA
-1.3
V
VBE(sat)2
IC=-500 mA, IB= -50mA
-2.6
V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
fT
Transition frequency
Output Capacitance
Cob
Input Capacitance
Cib
IE=0
IC=0
VCE=-20V, IC= -50mA
f=100MHz
VCB=-10V, IE= 0
f=1MHz
VEB=-2V,
IC= 0
f=1MHz
Delay time
td
Rise time
tr
IC=-150mA,IB1=-15mA
Storage time
tS
IC=-150mA
Fall time
tf
IB1= IB2= -15mA
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
VCC=-30V,
300
200
MHz
8
pF
30
pF
12
nS
30
nS
300
nS
65
nS
Any changing of specification will not be informed individual
Page 1 of 3
MMBT2907Q
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
TYPICAL CHARACTERISTICS
3.0
VCE = –1.0 V
VCE = –10 V
hFE , Normalized Current Gain
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
I C, Collector Current (mA)
Figure 3. DC Current Gain
VCE , Collector–Emitter Voltage (V)
–1.0
–0.8
IC = –1.0 mA
–10 mA
–100 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
I B, Base Current (mA)
–3.0
–2.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
tf
3.0
–5.0 –7.0 –10
2.0 V
–20 –30
–50 –70 –100
IC, Collector Current
Figure 5. Turn–On Time
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
100
70
50
30
t′s = ts – 1/8 tf
20
10
7.0
5.0
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, Time (ns)
t, Time (ns)
300
200
–200 –300 –500
10
7.0
5.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
I C, Collector Current (mA)
–200 –300 –500
Figure 6. Turn–Off Time
Any changing of specification will not be informed individual
Page 2 of 3
MMBT2907Q
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
f = 1.0 kHz
8.0
NF, Noise Figure (dB)
NF, Noise Figure (dB)
8.0
IC = –1.0 mA, Rs = 430 Ω
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
–100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
4.0
0
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, Frequency (kHz)
R s, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
50 k
400
Ceb
10
7.0
5.0
Ccb
3.0
2.0
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
f T, Current–Gain — Bandwidth Product (MHz)
20
C, Capacitance (pF)
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
2.0
30
–20 –30
300
200
100
80
VCE = –20 V
TJ = 25°C
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
Reverse Voltage (VOLTS)
I C, Collector Current (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
–1.0
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
RqVC for VCE(sat)
Coefficient (mV/ ° C)
–0.8
VBE(on) @ VCE = –10 V
–0.6
V, Voltage (V)
6.0
–0.4
–0.2
–0.5
–1.0
–1.5
RqVB for VBE
–2.0
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
–50 –100 –200
–500
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
I C, Collector Current (mA)
I C, Collector Current (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page 3 of 3
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