PHILIPS BUK7277-55A Trenchmos standard level fet Datasheet

BUK7277-55A
TrenchMOS™ standard level FET
Rev. 01 — 1 February 2001
Product specification
M3D300
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7277-55A in SOT428 (D-PAK).
2. Features
■
■
■
■
TrenchMOS™ technology
Q101 compliant
175 °C rated
Standard level compatible.
3. Applications
c
c
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
drain (d)
Simplified outline
Symbol
mb
d
g
2
1
Top view
3
MBK091
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
MBB076
s
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
−
55
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V
−
18
A
Ptot
total power dissipation
Tmb = 25 °C
−
51
W
Tj
junction temperature
−
175
°C
RDSon
drain-source on-state resistance
Tj = 25 °C
65
77
Tj = 175 °C
−
154
mΩ
mΩ
Min
Max
Unit
−
55
V
−
55
V
VGS = 10 V; ID = 10 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
RGS = 20 kΩ
−
±20
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
−
18
A
Tmb = 100 °C; VGS = 10 V; Figure 2
−
13
A
[1] −
73
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
Ptot
total power dissipation
−
51
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 25 °C
−
18
A
IDRM
pulsed reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
−
73
A
unclamped inductive load; ID = 6 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting T j = 25 °C
−
36
mJ
Avalanche ruggedness
WDSS
[1]
non-repetitive avalanche energy
IDM is limited by chip, not package.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
2 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa24
03aa16
120
Pder
120
Ider
(%)
(%)
100
100
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150
175
200
0
Tmb (oC)
25
50
75
100
125
150
175
200
Tmb (oC)
VGS ≥ 4.5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nc57
103
ID
(A)
102
RDSon = VDS/ ID
tp = 10 us
10
100 us
δ=
P
tp
T
1 ms
D.C.
1
10 ms
100 ms
t
tp
T
10-1
1
10
VDS (V) 102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
3 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-a)
thermal resistance from junction to ambient
minimum footprint, FR4 board
71.4
K/W
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
2.9
K/W
7.1 Transient thermal impedance
03nc56
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
δ=
P
0.02
tp
T
Single Shot
t
tp
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
4 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
55
−
−
V
Tj = −55 °C
50
−
−
V
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 0.25 mA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
−
−
V
Tj = −55 °C
−
−
4.4
V
Tj = 25 °C
−
0.05
10
µA
Tj = 175 °C
−
−
500
µA
−
2
100
nA
Tj = 25 °C
−
65
77
mΩ
Tj = 175 °C
−
−
154
mΩ
−
316
422
pF
VDS = 55 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Figure 7 and 8
Dynamic characteristics
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
Coss
output capacitance
−
92
110
pF
Crss
reverse transfer capacitance
−
64
87
pF
td(on)
turn-on delay time
−
10
−
ns
tr
rise time
−
50
−
ns
td(off)
turn-off delay time
−
70
−
ns
tf
fall time
−
40
−
ns
Ld
internal drain inductance
measured from drain lead from package to
centre of die
−
2.5
−
nH
Ls
internal source inductance
measured from source lead from package to
source bond pad
−
7.5
−
nH
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
5 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 10 A; VGS = 0 V; Figure 15
−
0.85
1.2
V
trr
reverse recovery time
−
32
−
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs; VGS = −10 V;
VDS = 30 V
−
120
−
nC
03nc09
60
ID
(A)
50
03nc08
160
RDSon
(mΩ)
140
VGS (V) = 16 14
20
12
10.5
40
120
9.5
30
8.5
100
7.5
20
80
6.5
10
60
5.5
4.5
0
40
0
2
4
6
8
10
VDS (V)
5
Tj = 25 °C
10
15
VGS (V)
20
Tj = 25 °C; ID = 10 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa28
2.2
03nc10
180
RDSon
(mΩ)
160
a
5.5
6 6.5 7
8 VGS (V) =10
2
1.8
1.6
140
1.4
1.2
120
1
100
0.8
0.6
80
0.4
60
0.2
0
40
0
10
20
30
40
ID (A)
-60
50
Tj = 25 °C
20
60
100
140
180
o
Tj ( C)
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
-20
Rev. 01 — 1 February 2001
6 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
VGS(th)
4.5
4
(V)
03aa35
10-1
ID
(A)
max.
10-2
3.5
3
10-3
typ.
2.5
min
2
typ
max
10-4
min
1.5
1
10-5
0.5
0
10-6
-60
-20
20
60
100
140
Tj (oC)
180
0
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03nc06
8
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nc11
600
C (pF)
gfs
(S)
500
6
400
Ciss
300
4
200
2
100
Coss
Crss
0
0
0
5
10
15
20
ID (A)
10-2
25
Tj = 25 °C; VDS = 25 V
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
10-1
Rev. 01 — 1 February 2001
7 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03nc07
25
ID
(A)
03nc05
10
VGS
(V) 9
20
VDD= 44 V
8
VDD= 14 V
7
15
6
5
10
4
3
5
2
Tj = 175 OC
1
O
Tj = 25 C
0
0
0
2
4
6
8
10
VGS (V)
0
5
10
QG (nC)
15
Tj = 25 °C; ID = 10 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nc04
120
IS
(A)
100
80
60
O
Tj = 175 C
40
O
Tj = 25 C
20
0
0.0
0.5
1.0
1.5
VSD (V)
2.0
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
8 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
D1
mounting
base
E1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
2.38
2.22
mm
A1(1)
A2
b
b1
max.
b2
c
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
D1
E
D
max. max. max.
E1
min.
6.22
5.98
4.0
6.73
6.47
4.81
4.45
e
e1
2.285 4.57
HE
max.
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.7
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-09-13
Fig 16. SOT428 (D-PAK).
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
9 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
10. Revision history
Table 6:
Revision history
Rev Date
01
20010201
CPCN
Description
-
Product specification; initial version.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
10 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
11. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
11 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Philips Semiconductors - a worldwide company
Argentina: see South America
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 14 099 6161, Fax. +33 14 099 6427
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA71)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
12 of 13
BUK7277-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 1 February 2001
Document order number: 9397 750 07698
Similar pages