LRC LDTD114ELT1G Bias resistor transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD114ELT1G
S-LDTD114ELT1G
• Applications
Inverter, Interface, Driver
•
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
3
1
2
SOT-23
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
BASE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VCC
50
V
Input voltage
VIN
−10 to +40
V
Output current
IC
500
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
3
COLLECTOR
R2
2
EMITTER
Unit
Supply voltage
R1
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTD114ELT1G
S-LDTD114ELT1G
CA
10
10
3000/Tape & Reel
LDTD114ELT3G
S-LDTD114ELT3G
CA
10
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.5
VI(on)
3
−
−
VO(on)
−
0.1
0.3
V
Unit
V
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 10mA
IO/II= 50mA/2.5mA
II
−
−
0.88
mA
VI= 5V
IO(off)
−
−
0.5
µA
VCC= 50V, VI=0V
GI
56
−
−
−
VO= 5V, IO= 50mA
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
−
200
−
MHz
VCE=10V, IE= −50mA, f=100MHz
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTD114ELT1G , S-LDTD114ELT1G
zElectrical characteristic curves
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTD114ELT1G , S-LDTD114ELT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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