Microsemi APTM20SKM08TG Buck chopper mosfet power module Datasheet

APTM20SKM08TG
Buck chopper
MOSFET Power Module
VDSS = 200V
RDSon = 8mΩ typ @ Tj = 25°C
ID = 208A @ Tc = 25°C
Application
VBUS
NTC2
•
•
Q1
AC and DC motor control
Switched Mode Power Supplies
Features
G1
•
OUT
•
•
0/VBUS SENSE
NTC1
•
•
0/ VBUS
SENSE
VBUS
S1
G1
0/ VBUS
0/ VBUS
SENSE
Benefits
OUT
•
•
•
•
OUT
NTC2
NTC1
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
208
155
832
±30
10
781
100
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
0/VBU S
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM20SKM08TG – Rev 3
S1
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
APTM20SKM08TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Min
VGS = 10V, ID = 104A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
IF
VF
Maximum Reverse Leakage Current
Diode Forward Voltage
trr
Reverse Recovery Time
Test Conditions
Qrr
Reverse Recovery Charge
mΩ
V
nA
nF
nC
Tj = 25°C
Tj = 125°C
Tc = 80°C
116
1698
1872
µJ
1972
Typ
Max
500
750
180
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
180
Tj = 125°C
750
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µJ
1858
Tj = 125°C
di/dt = 600A/µs
ns
88
Min
200
IF = 180A
IF = 360A
IF = 180A
VR = 133V
Unit
64
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, R G = 2.5Ω
IF = 180A
Max
µA
32
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, R G = 2.5Ω
DC Forward Current
Unit
134
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 208A
R G = 2.5Ω
VR=200V
Typ
14.4
4.66
0.29
280
Max
375
1500
10
5
±150
106
Chopper diode ratings and characteristics
IRM
8
3
VGS = 10V
VBus = 100V
ID = 208A
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Typ
Tj = 25°C
Tj = 125°C
Unit
V
µA
A
1.15
V
July, 2006
IDSS
Characteristic
ns
nC
2–6
APTM20SKM08TG – Rev 3
Symbol
APTM20SKM08TG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
To Heatsink
M5
2500
-40
-40
-40
2.5
RT =
Min
R 25
Unit
°C/W
V
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Max
0.16
0.32
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3–6
APTM20SKM08TG – Rev 3
July, 2006
SP4 Package outline (dimensions in mm)
APTM20SKM08TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.06
0.3
0.04
Single Pulse
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
1400
Transfert Characteristics
600
VGS=15V
10V
1000
ID, Drain Current (A)
9V
800
8.5V
600
8V
7.5V
400
7V
200
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
400
300
200
TJ=25°C
100
T J=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 104A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
RDS(on) vs Drain Current
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
200
150
100
50
0.8
0
0
50
100
150
200
250
300
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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July, 2006
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
4–6
APTM20SKM08TG – Rev 3
ID, Drain Current (A)
1200
APTM20SKM08TG
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
2.5
VGS=10V
ID= 104A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
limited by
RDSon
100µs
100
1ms
10
0.6
10ms
Single pulse
TJ=150°C
TC=25°C
100ms
1
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=208A
V DS=40V
12
TJ =25°C
VDS=100V
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
8
VDS=160V
6
4
2
0
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
July, 2006
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
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5–6
APTM20SKM08TG – Rev 3
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
APTM20SKM08TG
Delay Times vs Current
Rise and Fall times vs Current
160
120
60
120
tr and tf (ns)
t d(on) and td(off) (ns)
t d(off)
VDS=133V
RG=2.5Ω
T J=125°C
L=100µH
80
t d(on)
40
100
tr
60
40
20
0
0
0
50
100 150 200 250 300 350
I D, Drain Current (A)
0
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy (mJ)
Eoff
Eon
2
1
5
4
Eoff
3
Eon
2
1
0
50
100 150 200 250 300 350
0
I D, Drain Current (A)
Operating Frequency vs Drain Current
250
ZVS
V DS=133V
D=50%
R G=2.5Ω
T J=125°C
T C=75°C
ZCS
Hard
switching
0
25
50
75
10
15
20
25
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
200
5
Gate Resistance (Ohms)
350
50
VDS=133V
ID=208A
TJ=125°C
L=100µH
Eoff
0
100
100 150 200 250 300 350
ID, Drain Current (A)
6
3
150
50
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
Eon and Eoff (mJ)
tf
80
20
Frequency (kHz)
V DS=133V
R G=2.5Ω
T J=125°C
L=100µH
140
100
1000
TJ =150°C
100
TJ =25°C
10
1
100 125 150 175 200
I D, Drain Current (A)
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM20SKM08TG – Rev 3
July, 2006
VSD, Source to Drain Voltage (V)
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