NTE NTE256 Silicon npn transistor darlington w/damper diode Datasheet

NTE256
Silicon NPN Transistor
Darlington w/Damper Diode
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Peak (tp = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICEO
VCEO = 400V, IB = 0
–
–
1
mA
ICEV
VCE = 600V, VBE = 1.5V, Note 1
–
–
100
µA
VCE = 600V, VBE = 1.5V, TC = +100°C,
Note 1
–
–
2
mA
VEB = 2V, IC = 0, Note 1
–
–
175
mA
400
–
–
V
IC = 10A, IB = 0.5A
–
–
2.0
V
IC = 18A, IB = 1.8A
–
–
2.5
V
IC = 22A, IB = 2.2A
–
–
3.0
V
IC = 28A, IB = 5.6A
–
–
5.0
V
IEBO
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, Note 1
Collector–Emitter Saturation Voltage
VCE(sat)
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
IC = 10A, IB = 0.5A, Note 1
–
–
2.5
V
IC = 18A, IB = 1.8A, Note 1
–
–
3.0
V
IC = 22A, IB = 2.2A, Note 1
–
–
3.3
V
VCE = 5V, IC = 10A
30
–
–
VCE = 5V, IC = 18A
20
–
–
VF
IF = 22A
–
–
4
V
Turn–On Time
ton
–
0.35
0.6
µs
Storage Time
ts
VCC = 250V, IC = 10A, IB1 = 0.5A,
VBE(off) = –5V
–
0.8
1.5
µs
Fall Time
tf
–
0.25
0.6
µs
VClamp = 250V, IC = 10A, IB1 = 0.5A,
VBE(off) = –5V
–
0.8
1.5
µs
–
0.08
0.5
µs
VClamp = 250V, IC = 20A, IB1 = 2A,
VBE(off) = –5V
–
0.8
1.5
µs
–
0.35
0.7
µs
Base–Emitter Saturation Voltage
DC Current Gain
VBE(sat)
hFE
Diode Forward Voltage
Test Conditions
Resistive Switching Times
Inductive Switching Times
Storage Time
ts
Fall Time
tf
Storage Time
ts
Fall Time
tf
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
.060 (1.52)
.600
(15.24)
.173 (4.4)
C
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
B
.430
(10.92)
E
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners
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