Fairchild FMMT549 Pnp low saturation transistor Datasheet

FMMT549
tm
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continous.
• Sourced from process PB.
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Value
Unit
VCEO
Collector-Emitter Voltage
Parameter
-30
V
VCBO
Collector-Base Voltage
-35
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current - Continuous
- Peak Pulse Current
-1
-2
A
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics *
Symbol
Parameter
Value
Unit
PD
Total Device Dissipation, by RθJA
Derate above 25°C
500
4
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
250
°C/W
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in2 of 2 oz copper.
©2006 Fairchild Semiconductor Corporation
FMMT549 Rev. C
1
www.fairchildsemi.com
FMMT549 PNP Low Saturation Transistor
August 2006
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0
-30
V
BVCBO
Collector-Base Breakdown Voltage
IC = -100µA, IE = 0
-35
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC = 0
-5.0
ICBO
Collector Cutoff Current
VCB = -30V, IE = 0
VCB = -30V, IE = 0, Ta = 100°C
-100
-10
nA
µA
IEBO
Emitter Cutoff Current
VEB= -4.0V, IC=0
-100
nA
V
On Characteristics *
hFE
DC Current Gain
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -500mA
VCE = -2.0V, IC = -1A
VCE = -2.0V, IC = -2A
70
100
80
40
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
-500
-750
mV
mV
VBE (sat)
Base-Emitter Saturation Voltage
IC = -1A, IB = -100mA
-1.25
V
VBE (on)
Base-Emitter On Voltage
IC = -1A, VCE = -2.0V
-1.0
V
Small Signal Characterics
fT
Current Gain Bandwidth Product
IC = -100mA, VCE = -5V,
f = 100MHz
Cob
Output Capacitance
VCB = -10V, IE = 0, f = 1MHz
100
MHz
25
pF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
2
FMMT549 Rev. C
www.fairchildsemi.com
FMMT549 PNP Low Saturation Transistor
Electrical Characteristics*
Collector- Emitter Voltage vs
Collector current
Current Gain vs Collector Current
600
800
500
3.5mA
600
3mA
2.5mA
500
2mA
400
1.5mA
300
200
1mA
100
Ib=0.5mA
0
H FE - CURRENT GAIN
Collector Current, Ic [mA]
Vce = 2.0V
4mA
700
400
125°C
300
25°C
200
- 40°C
100
0
1
2
3
4
0
0.0001
5
VBESAT -BASE-EMITTER SATURATION VOLTAGE(V)
Base-Emitter On Voltage vs
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
1.6
1.2
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
0.2
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
f V=ce1.0MHz
= 2.0V
- 40°C
100
125°C
0.8
0.6
25°C
0.4
0.2
C ibo
80
60
40
Cobo
20
0.1
1
I C - COLLECTOR CURRENT (A)
0
0.1
10
3
FMMT549 Rev. C
β = 10
1.4
120
β = 10
0
0.01
10
Input/Output Capacitance vs
Reverse Bias Voltage
1.2
1
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Base-Emitter Saturation
Voltage vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
CAPACITANCE (pf)
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
V BEON- BASE-EMITTER ON VOLTAGE (V)
Collector-Emitter Voltage, Vce[V]
0.5 1
10 20
V CE - COLLECTOR VOLTAGE (V)
50
100
www.fairchildsemi.com
FMMT549 PNP Low Saturation Transistor
Typical Characteristics
FMMT549 PNP Low Saturation Transistor
Package Dimensions
0.45~0.60
0.20 MIN
SOT-23
2.40 ±0.10
1.30 ±0.10
0.40 ±0.03
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
4
FMMT549 Rev. C
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Formative or In Design
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The datasheet is printed for reference information only.
Rev. I20
5
FMMT549 Rev. C
www.fairchildsemi.com
FMMT549 PNP Low Saturation Transistor
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