HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 3 Typical Applications Features The HMC608 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios Saturated Power: +27.5 dBm @ 23% PAE • Point-to-Multi-Point Radios Gain: 32 dB • Military End-Use Supply: +5V @ 310 mA LINEAR & POWER AMPLIFIERS - CHIP 50 Ohm Matched Input/Output Die Size: 2.1 x 1.2 x 0.1 mm Functional Diagram General Description The HMC608 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier chip. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifier provides 32 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 5.5 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1] , Vpd = GND[2] Parameter Min. Frequency Range Gain [3] Typ. Max. 9.5 - 11.5 28 Gain Variation Over Temperature GHz 32 0.02 dB 0.03 dB/ °C Input Return Loss 12 dB Output Return Loss 20 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) 23 27 dBm 27.5 dBm 33 dBm Noise Figure 5.5 Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] 310 dB 350 [1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. 3 - 106 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Gain vs. Temperature 38 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 34 3 30 +25C +85C -55C 26 22 18 7 8 9 10 11 12 13 9 14 9.5 0 -5 -5 -10 -15 +25C +85C -55C -25 11 11.5 +25C +85C -55C -10 -15 -20 -25 -30 -30 -35 9 9.5 10 10.5 11 9 11.5 9.5 FREQUENCY (GHz) 30 30 25 25 Psat (dBm) 35 20 +25C +85C -40C 10 10.5 11 11.5 11 11.5 Psat vs. Temperature 35 15 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 10.5 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -20 10 FREQUENCY (GHz) FREQUENCY (GHz) 20 15 +25C +85C -40C 10 5 LINEAR & POWER AMPLIFIERS - CHIP S21 S11 S22 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 5 0 0 9 9.5 10 10.5 FREQUENCY (GHz) 11 11.5 9 9.5 10 10.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 107 HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 40 10 35 9 8 20 15 +25C +85C -40C 7 6 5 4 3 +25C +85C -55C 2 5 1 0 0 9 9.5 10 10.5 11 11.5 9 9.5 10 FREQUENCY (GHz) 11 11.5 Reverse Isolation vs. Temperature 35 0 -10 33 ISOLATION (dB) GAIN (dB), P1dB(dBm), Psat (dBm), IP3 (dBm) 10.5 FREQUENCY (GHz) Gain, Power & OIP3 vs. Supply Voltage @ 10.3 GHz 31 Gain P1dB Psat IP3 29 -20 +25C +85C -55C -30 -40 -50 27 -60 25 4.5 5 -70 5.5 9 9.5 10 Vdd Supply Voltage (V) 30 3.5 POWER DISSIPATION (W) 4 25 20 15 10 Pout Gain PAE 5 -16 -14 -12 -10 -8 Pin (dBm) -6 11 11.5 Power Dissipation 35 -18 10.5 FREQUENCY (GHz) Power Compression @ 10.3 GHz 0 -20 3 - 108 NOISE FIGURE (dB) OIP3 (dBm) 25 10 Pout (dBm), GAIN (dB), PAE (%) LINEAR & POWER AMPLIFIERS - CHIP 3 30 -4 -2 0 2 9 GHz 9.5 GHz 10 GHz 10.5 GHz 11.0 GHz 11.5 GHz 3 2.5 2 1.5 1 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Low Gain Mode, Broadband Gain & Return Loss Low Gain Mode, Gain vs. Temperature 25 28 20 26 24 S21 S11 S22 5 0 3 22 -5 -10 -15 20 18 16 14 +25C +85C -55C -20 12 -25 10 -30 -35 8 7 8 9 10 11 12 13 14 9 9.5 FREQUENCY (GHz) 10.5 11 11.5 Low Gain Mode, Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Low Gain Mode, Input Return Loss vs. Temperature -10 -15 +25C +85C -55C -20 10 FREQUENCY (GHz) -25 +25C +85C -55C -10 -15 -20 -25 -30 -30 -35 9 9.5 10 10.5 FREQUENCY (GHz) 11 11.5 9 9.5 10 10.5 11 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11.5 LINEAR & POWER AMPLIFIERS - CHIP 10 GAIN (dB) RESPONSE (dBm) 15 3 - 109 HMC608 v01.0707 Typical Supply Current vs. Vdd Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - CHIP 3 Drain Bias Voltage (Vdd1, Vdd2, Vdd3) 7 Vdc Gate Bias Voltage (Vgg) -4.0 to -1.0 Vdc Vdd (Vdc) Idd (mA) +4.5 300 RF Input Power (RFIN)(Vdd = +5.0 Vdc) +10 dBm +5.0 310 Channel Temperature 175 °C +5.5 325 Continuous Pdiss (T= 85 °C) (derate 25.89 mW/°C above 85 °C) 2.33W Thermal Resistance (channel to die bottom) 38.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 310 mA at +5.0V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 110 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 8 and Die Bottom GND Die Bottom must be connected to RF/DC ground. 3 Vgg Gate control for amplifier. Adjust to achieve Id of 310mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 4 Vpd High gain (connect to ground) / low gain mode pin control (open circuit). External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 5, 6, 7 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 9 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 111 HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 112 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 3 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 113