ON M74VHC1GT14DFT1G Schmitt−trigger inverter / cmos logic level shifter lsttl−compatible input Datasheet

MC74VHC1GT14
Schmitt−Trigger Inverter /
CMOS Logic Level Shifter
LSTTL−Compatible Inputs
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MARKING
DIAGRAMS
5
SC−88A/SC70−5/SOT−353
DF SUFFIX
CASE 419A
•
•
•
•
•
•
•
•
•
High Speed: tPD = 4.5 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
VC M G
G
1
5
5
1
TSOP−5/SOT23−5/SC59−5
DT SUFFIX
CASE 483
VC
M
G
Features
M
The MC74VHC1GT14 is a single gate CMOS Schmitt−trigger
inverter fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic−level translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the high−voltage power supply.
The MC74VHC1GT14 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT14 to be used to interface 5 V circuits to 3 V
circuits. The output structures also provide protection when VCC = 0 V.
These input and output structures help prevent device destruction
caused by supply voltage − input/output voltage mismatch, battery
backup, hot insertion, etc. The MC74VHC1GT14 can be used to
enhance noise immunity or to square up slowly changing waveforms.
VC M G
G
1
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V
CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load
Power Down Protection Provided on Inputs and Outputs
PIN ASSIGNMENT
Balanced Propagation Delays
1
Pin and Function Compatible with Other Standard Logic Families
2
IN A
3
GND
4
OUT Y
5
VCC
Chip Complexity: FETs = 100; Equivalent Gates = 25
Pb−Free Packages are Available
NC
1
IN A
2
GND
3
5
NC
VCC
FUNCTION TABLE
4
OUT Y
A Input
Y Output
L
H
H
L
Figure 1. Pinout (Top View)
ORDERING INFORMATION
1
IN A
OUT Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 12
1
Publication Order Number:
MC74VHC1GT14/D
MC74VHC1GT14
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
−0.5 to 7.0
−0.5 to VCC + 0.5
V
−20
mA
+20
mA
+25
mA
VOUT
DC Output Voltage
IIK
Input Diode Current
IOK
Output Diode Current
IOUT
DC Output Current, per Pin
ICC
DC Supply Current, VCC and GND
PD
Power Dissipation in Still Air
qJA
Thermal Resistance
TL
VCC = 0
High or Low State
VOUT < GND; VOUT > VCC
+50
mA
SC−88A, TSOP−5
200
mW
SC−88A, TSOP−5
333
°C/W
Lead Temperature, 1 mm from Case for 10 secs
260
°C
TJ
Junction Temperature Under Bias
+150
°C
Tstg
Storage Temperature
−65 to +150
°C
> 2000
> 200
N/A
V
±500
mA
VESD
ESD Withstand Voltage
ILatchup
Latchup Performance
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Above VCC and Below GND at 125°C (Note 4)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
3.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
0.0
0.0
5.5
VCC
V
−55
+125
°C
−
−
No Limit
No Limit
ns/V
VOUT
DC Output Voltage
TA
VCC = 0
High or Low State
Operating Temperature Range
tr , tf
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Input Rise and Fall Time
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
TJ = 90 ° C
1,032,200
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
Device Junction Temperature versus
Time to 0.1% Bond Failures
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1GT14
DC ELECTRICAL CHARACTERISTICS
VCC
Symbol
Parameter
Test Conditions
TA ≤ 85°C
TA = 25°C
(V)
Min
Typ
Max
Min
VT+
Positive Threshold
Voltage
3.0
4.5
5.5
1.20
1.58
1.79
1.40
1.74
1.94
1.60
2.00
2.10
VT−
Negative Threshold
Voltage
3.0
4.5
5.5
0.35
0.5
0.6
0.76
1.01
1.13
0.93
1.18
1.29
0.35
0.5
0.6
VH
Hysteresis Voltage
3.0
4.5
5.5
0.30
0.40
0.50
0.64
0.73
0.81
1.20
1.40
1.60
0.30
0.40
0.50
VIN ≤ VT − Min
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN ≥ VT + Max
IOL = 50 mA
2.0
3.0
4.5
IOL = 4 mA
IOL = 8 mA
VOH
Minimum High−Level
Output Voltage
Max
−55 ≤ TA ≤ 125°C
Min
1.6
2.0
2.0
Max
Unit
1.6
2.0
2.0
V
0.35
0.5
0.6
1.20
1.40
1.60
0.30
0.40
0.50
1.9
2.9
4.4
1.9
2.9
4.4
2.48
3.80
2.34
3.66
V
1.20
1.40
1.60
V
V
V
VOL
Maximum Low−Level
Output Voltage
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
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AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr/tf = 3.0 ns
TA ≤ 85°C
TA = 25°C
Symbol
tPLH,
tPHL
CIN
Parameter
Maximum Propagation
Delay, A to Y
Min
Test Conditions
−55 ≤ TA ≤ 125°C
Typ
Max
Min
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.0
8.4
12.8
16.3
1.0
1.0
15.0
18.5
1.0
1.0
17.0
20.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.5
5.8
8.6
10.6
1.0
1.0
10.0
12.0
1.0
1.0
11.5
13.5
5
10
Maximum Input
Capacitance
10
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD
10
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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3
MC74VHC1GT14
3.0 V
A
50%
GND
tPLH
tPHL
VOH
Y
50% VCC
VOL
Figure 4. Switching Waveforms
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL *
*Includes all probe and jig capacitance
Figure 5. Test Circuit
ORDERING INFORMATION
Device
Package
MC74VHC1GT14DFT1
SC70−5/SC−88A/SOT−353
M74VHC1GT14DFT1G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GT14DFT2
SC70−5/SC−88A/SOT−353
M74VHC1GT14DFT2G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GT14DTT1
SOT23−5/TSOP−5/SC59−5
M74VHC1GT14DTT1G
SOT23−5/TSOP−5/SC59−5
(Pb−Free)
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC1GT14
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MC74VHC1GT14
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE G
NOTE 5
2X
0.10 T
2X
0.20 T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
D 5X
0.20 C A B
5
1
4
2
3
M
B
S
K
L
DETAIL Z
G
A
DIM
A
B
C
D
G
H
J
K
L
M
S
DETAIL Z
J
C
0.05
SEATING
PLANE
H
T
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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