Vishay BAT46 Small signal schottky diode Datasheet

BAT46
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications.
• This diode features very low turn-on
voltage and fast switching. This device is
protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
• This diode is also available in the
SOD123 case with type designation BAT46W-V and in
the MiniMELF case with type designations LL46.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT46
Ordering code
Type Marking
Remarks
BAT46-TR or BAT46-TAP
BAT46
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
1)
Unit
100
V
IF
1501)
mA
tp < 1 s, δ < 0.5
IFRM
3501)
mA
tp < 10 ms
IFSM
7501)
mA
Ptot
1501)
mW
Repetitive peak reverse voltage
Surge forward current
Value
VRRM
Forward continuous current
Repetitive peak forward current
Symbol
Tamb = 80 °C
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85662
Rev. 1.7, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT46
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to +150
°C
Junction temperature
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current2)
Forward voltage2)
Diode capacitance
Test condition
Symbol
Min.
IR = 100 µA (pulsed)
V(BR)
100
VR = 1.5 V
IR
VR = 1.5 V, Tj = 60 °C
VR = 10 V
Typ.
Max.
Unit
0.5
µA
IR
5
µA
IR
0.8
µA
VR = 10 V, Tj = 60 °C
IR
7.5
µA
VR = 50 V
IR
2
µA
VR = 50 V, Tj = 60 °C
IR
15
µA
VR = 75 V
IR
5
µA
VR = 75 V, Tj = 60 °C
IR
20
µA
IF = 0.1 mA
VF
250
mV
V
IF = 10 mA
VF
450
mV
IF = 250 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
10
pF
VR = 1 V, f = 1 MHz
CD
6
pF
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IR - Reverse Leakage Current (µA)
I F - Forward Current (mA)
1000
T j = 60 °C
100
10
25 °C
1
0.1
0.01
10
T j = 60 °C
1
Tj = 25 °C
0.1
0.01
0
18546
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
www.vishay.com
0
1.2
Figure 1. Typical Instantaneous Forward Characteristics
2
100
18547
20
40
60
80
100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
For technical questions within your region, please contact one of the following: Document Number 85662
[email protected], [email protected], [email protected]
Rev. 1.7, 05-Aug-10
BAT46
Vishay Semiconductors
P tot - Power Dissipation (mW)
250
200
150
100
50
0
0
25
20134
50
75
100
125
150
175
200
T amb - Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85662
Rev. 1.7, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Revision: 12-Mar-12
1
Document Number: 91000
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