Vishay MCL4148 Silicon epitaxial planar diode Datasheet

MCL4148.MCL4448
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices 1N4148
and 1N4448 respectively
D Micro Melf package
96 12315
Applications
Extreme fast switches
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
PV
Tj
Tstg
tp=1ms
VR=0
Value
100
75
2
450
200
150
500
175
–65...+175
Unit
V
V
A
mA
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 85566
Rev. 3, 01-Apr-99
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1, 35mm
copper clad, 0.9 mm2 copper area per electrode
Symbol
RthJA
Value
500
Unit
K/W
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MCL4148.MCL4448
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Test Conditions
IF=5mA
IF=50mA
IF=100mA
VR=20V
VR=20V, Tj=150°C
VR=75V
IR=100mA, tp/T=0.01,
tp=0.3ms
VR=0, f=1MHz, VHF=50mV
VHF=2V, f=100MHz
IF=IR=10mA, iR=1mA
IF=10mA, VR=6V, iR=0.1xIR,
RL=100W
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery
y time
Type
MCL4448
MCL4148
MCL4448
Symbol
VF
VF
VF
IR
IR
IR
V(BR)
Min
0.62
Typ
0.86
0.93
Unit
V
V
V
nA
mA
mA
V
4
pF
%
ns
ns
100
CD
hr
Max
0.72
1
1
25
50
5
45
trr
trr
8
4
Characteristics (Tj = 25_C unless otherwise specified)
0.71
1.3
Reflow Soldering
1.27
95 10330
1.2
0.152
9.9
0.6
0.355
25
1.2
0.6
2.4
Figure 2. Recommended foot pads (in mm)
10
Wave Soldering
95 10331
2.5
1.4
95 10329
24
0.7
1.4
0.7
2.8
Figure 1. Board for RthJA definition (in mm)
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Figure 3. Recommended foot pads (in mm)
Document Number 85566
Rev. 3, 01-Apr-99
MCL4148.MCL4448
Vishay Telefunken
1000
LL 4148
IR – Reverse Current ( nA )
IF – Forward Current ( mA )
1000
100
Scattering Limit
10
1
Tj = 25°C
100
Tj = 25°C
0.1
0
0.4
0.8
1.2
1.6
1
1
2.0
VF – Forward Voltage ( V )
94 9096
Figure 6. Reverse Current vs. Reverse Voltage
1000
3.0
LL 4448
CD – Diode Capacitance ( pF )
IF – Forward Current ( mA )
100
10
VR – Reverse Voltage ( V )
94 9098
Figure 4. Forward Current vs. Forward Voltage
100
Scattering Limit
10
1
Tj = 25°C
0.1
0
94 9097
Scattering Limit
10
0.4
0.8
1.2
1.6
2.0
1.5
1.0
0.5
0
2.0
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
Document Number 85566
Rev. 3, 01-Apr-99
f = 1 MHz
Tj = 25°C
2.5
0.1
94 9099
1
10
100
VR – Reverse Voltage ( V )
Figure 7. Diode Capacitance vs. Reverse Voltage
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MCL4148.MCL4448
Vishay Telefunken
Dimensions in mm
96 12072
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Document Number 85566
Rev. 3, 01-Apr-99
MCL4148.MCL4448
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85566
Rev. 3, 01-Apr-99
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