Freescale MRF18060ALR3 Rf power field effect transistor n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF18060ALR3
LIFETIME BUY
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical GSM Performance @ 1805 MHz
Power Gain — 13 dB @ 60 Watts
Efficiency — 45% @ 60 Watts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1805 - 1880 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465 - 06, STYLE 1
NI - 780
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC ≥ 25°C
Derate above 25°C
PD
180
1.03
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.97
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Document Number: MRF18060A
Rev. 11, 10/2008
MRF18060ALR3
1
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
Vdc
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
160
—
pF
Output Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
740
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.7
—
pF
Common - Source Amplifier Power Gain @ 60 W
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz)
Gps
11.5
13
—
dB
Drain Efficiency @ 60 W
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz)
η
43
45
—
%
IRL
—
—
- 10
dB
Off Characteristics
LIFETIME BUY
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 MHz)
1. Part is internally matched both on input and output.
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
MRF18060ALR3
2
RF Device Data
Freescale Semiconductor
R1
T1
Z6
VSUPPLY
R3
C4
C1
C2
R5
Z1
Z2
LIFETIME BUY
Z4
Z5
RF
OUTPUT
Z7
C7
Z3
C6
C5
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
T1
C3
R4
VBIAS
RF
INPUT
+
DUT
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10 mF, 35 V Electrolytic Capacitor
1.2 pF Chip Capacitor
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT - 23
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″
1.16″ x 0.09″
0.57″ x 0.95″
0.59″ x 1.18″
1.26″ x 0.15″
1.15″ x 0.09″
0.37″ x 0.09″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
VBIAS
R2
R3
R1
VSUPPLY
C3
C1
R4
C4
C2
T1
R5
C7
C6
C5
Ground
Ground
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
R2
MRF18060ALR3
RF Device Data
Freescale Semiconductor
3
VBIAS
C1
T1
R1
R5
R2
VSUPPLY
C2
C4
R3
T2
+
C3
R4
C5
R6
LIFETIME BUY
RF
INPUT
Z1
Z2
C6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
Z3
Z6
Z4
RF
OUTPUT
Z5
C7
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU - P (0805)
10 mF, 35 V Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU - P (0805)
1 pF Chip Capacitor, ACCU - P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
Z7
C8
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon® Glass, εr = 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
ÎÎÎ
ÎÎÎ
ÎÎÎ
MRF18060ALR3
4
RF Device Data
Freescale Semiconductor
Î
ÎÎ
Î
Ground
C4
R1
C1
R2
R3
T1
R4
T2
R5
C2
C3
C7
C5
R6
MRF18060
ÎÎ
ÎÎÎ
ÎÎ
Î
Î
ÎÎ
ÎÎÎ
Î
ÎÎ
VSUPPLY
C8
LIFETIME BUY
C6
ÎÎ
ÎÎ
Î
ÎÎ
Î
Î
ÎÎ
ÎÎ
Î
Î
ÎÎ
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
VBIAS
MRF18060ALR3
RF Device Data
Freescale Semiconductor
5
100
15
90
13
500 mA
12
11 300 mA
10
9
VDD = 26 Vdc
f = 1880 MHz
60
40
30
100
Pin = 6 W
70
3W
60
50
VDD = 26 Vdc
IDQ = 500 mA
30
1W
20
0.5 W
55
70
1880
1900
Figure 7. Output Power versus Frequency
45
Pout
50
35
30
30
VDD = 26 Vdc
IDQ = 500 mA
f = 1880 MHz
20
1
2
3
4
Pin, INPUT POWER (WATTS)
5
Figure 8. Output Power and Efficiency
versus Input Power
0
−2
Gps
−4
13.5
−6
13.0
−8
12.5
−10
12.0
−12
11.5
−14
IRL
10.5
10.0
1800
25
20
15
0
14.5
11.0
40
40
15.0
14.0
G ps, POWER GAIN (dB)
50
h
60
0
1700
30
80
10
1840
1860
f, FREQUENCY (MHz)
28
60
0
1820
22
24
26
VDD, SUPPLY VOLTAGE (VOLTS)
90
10
1800
20
Figure 6. Output Power versus Supply Voltage
90
40
VDD = 26 Vdc
IDQ = 500 mA
18
Figure 5. Power Gain versus
Output Power
80
1W
20
10
0
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
LIFETIME BUY
10
Pout, OUTPUT POWER (WATTS)
2.5 W
50
8
1
Pin = 5 W
70
1900
f, FREQUENCY (MHz)
−16
VDD = 26 Vdc
IDQ = 500 mA
2000
Figure 9. Wideband Gain and IRL
(at Small Signal)
−18
−20
2100
IRL, INPUT RETURN LOSS (dB)
100 mA
80
6
η, DRAIN EFFICIENCY (%)
IDQ = 750 mA
14
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
16
Pout , OUTPUT POWER (WATTS)
G ps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
MRF18060ALR3
6
RF Device Data
Freescale Semiconductor
Zload
f = 1700 MHz
f = 2100 MHz
LIFETIME BUY
f = 1700 MHz
Zsource
f = 2100 MHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW
f
MHz
Zsource
Ω
Zload
Ω
1700
0.60 - j2.53
2.27 - j3.44
1800
0.80 - j3.20
2.05 - j3.05
1900
0.92 - j3.42
1.90 - j2.90
2000
1.07 - j3.59
1.64 - j2.88
2100
1.31 - j4.00
1.29 - j2.99
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Zo = 5 Ω
MRF18060ALR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
M
B
(LID)
B
M
(INSULATOR)
B
M
C
F
E
A
A
(FLANGE)
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF18060ALR3
MRF18060ALR3
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
11
Oct. 2008
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Added Product Documentation and Revision History, p. 9
MRF18060ALR3
RF Device Data
Freescale Semiconductor
9
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF18060ALR3
Document Number: MRF18060A
Rev. 11, 10/2008
10
RF Device Data
Freescale Semiconductor
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