TLP3041(S),TLP3042(S),TLP3043(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP3041(S),TLP3042(S),TLP3043(S) Unit: mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY The TOSHIBA TLP3041 (S), TLP3042 (S), TLP3043 (S) consist of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. z Peak Off-State Voltage : 400 V (min) z Trigger LED Current : 15 mA (max) (TLP3041(S)) 10 mA (max) (TLP3042(S)) 5 mA (max) (TLP3043(S)) z On-State Current : 100 mA (max) z Isolation Voltage : 5000 Vrms (min) z UL Recognized : UL1577, File No. E67349 z SEMKO Approved : SS EN60065 z BSI Approved : BS EN60065, File No.8385 SS EN60950, File No.9841109 JEDEC EIAJ TOSHIBA weight: 0.39g ― ― 11-7A9 BS EN60950, File No.8386 z Option (D4) type Pin Configuration (top view) VDE approved: DIN EN60747-5-2 Approved No. 40009302 Maximum operating insulation voltage: 890VPK 1 Highest permissible over voltage: 8000VPK 2 (Note):When a EN60747-5-2 approved type is needed, please designate the "Option (D4)" 3 z Construction mechanical rating Creepage Distance Clearance Insulation Thickness 7.62 mm pich Standard Type 10.16 mm pich TLPxxxxF Type 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) 6 ZC 4 1: Anode 2: Cathode 3: N.C. 4:Terminal 1 6:Terminal 2 ZC:Zero-cross Circuit 1 2007-10-01 TLP3041(S),TLP3042(S),TLP3043(S) Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT IF 50 mA ΔIF / °C −0.7 mA / °C Peak Forward Current (100μs pulse, 100pps) IFP 1 A Power Dissipation PD 100 mW ΔPD / °C −1.0 mW / °C VR 5 V Tj 125 °C VDRM 400 V Forward Current LED Forward Current Derating (Ta ≥ 53°C) Power Dissipation Derating (Ta ≥ 25°C) Reverse Voltage Junction Temperature DETECTOR Off-State Output Terminal Voltage On-Stage RMS Ta = 25°C Current Ta = 70°C On-State Current Derating (Ta ≥ 25°C) Peak On-Stage Current (100μs pulse, 120pps) Peak Nonrepetitive Surge Current (PW = 10ms, DC = 10%) Power Dissipation Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature 100 IT(RMS) mA 50 ΔIT / °C −1.1 mA / °C ITP 2 A ITSM 1.2 A PD 300 mW ΔPD / °C −4.0 mW / °C Tj 115 °C Storage Temperature Range Tstg −55 ∼ 150 °C Operating Temperature Range Topr −40 ∼ 100 °C Lead Soldering Temperature (10s) Tsol 260 °C Total Package Power Dissipation PT 330 mW Total Package Power Dissipation Derating (Ta ≥ 25°C) ΔPT / °C −4.4 mW / °C BVS 5000 Vrms Isolation Voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage VAC ⎯ ⎯ 120 Vac Forward Current IF* 15 20 25 mA Peak On-Stage Current ITP ⎯ ⎯ 1 A Operating Temperature Topr −25 ⎯ 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. *: In the case of TLP3042 2 2007-10-01 TLP3041(S),TLP3042(S),TLP3043(S) Individual Electrical Characteristics (Ta = 25°C) DETECTOR LED CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse Current IR VR = 5V ⎯ ⎯ 10 μA Capacitance CT V = 0, f = 1MHz ⎯ 10 ⎯ pF Peak Off-State Current IDRM VDRM = 400V ⎯ 10 100 nA Peak On-Stage Voltage VTM ITM = 100mA ⎯ 1.7 3.0 V ⎯ 0.6 ⎯ mA Holding Current ⎯ IH Critical Rate of Rise of OffState Voltage Critical Rate of Rise of Commutating Voltage dv / dt Vin = 120Vrms, Ta = 85°C (Fig.1) 200 500 ⎯ V / μs dv / dt(c) Vin = 30Vrms, IT = 15mA (Fig.1) ⎯ 0.2 ⎯ V / μs MIN TYP. MAX ⎯ ⎯ 15 ⎯ 5 10 ⎯ ⎯ 5 Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION TLP3041(S) Trigger LED Current IFT TLP3042(S) VT = 3V TLP3043(S) UNIT mA Inhibit Voltage VIH IF = Rated IFT ⎯ ⎯ 40 V Leakage in Inhibited State IIH IF = Rated IFT VT = Rated VDRM ⎯ 100 300 μA Capacitance Input to Output CS VS = 0, f = 1MHz ⎯ 0.8 ⎯ pF ⎯ Ω Isolation Resistance RS VS = 500V (R.H. ≤ 60%) 5×10 Fig. 1 BVS 10 14 5000 ⎯ ⎯ AC, 1 second (in oil) ⎯ 10000 ⎯ DC, 1 minute (in oil) ⎯ 10000 ⎯ AC, 1 minute Isolation Voltage 10 Vrms Vdc dv / dt test circuit + VCC Rin 120Ω − 1 2 3 4 ＋5V,VCC Vin 6 RL 0V ～ dv / dt（c） 2kΩ 3 dv / dt 2007-10-01 TLP3041(S),TLP3042(S),TLP3043(S) 4 2007-10-01 TLP3041(S),TLP3042(S),TLP3043(S) 5 2007-10-01 TLP3041(S),TLP3042(S),TLP3043(S) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01