BCP882H 3A , 70 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package. SOT-89 High DC Current Gain Low VCE(sat) 4 1 MARKING 2 3 A E 1. Base C D882H 2. Collector B CLASSIFICATION OF hFE F G H Rank BCP882H-R BCP882H-O BCP882H-Y BCP882H-GR Range 60~120 100~200 160~320 200~400 K J L REF. A B C D E F PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch 3. Emitter D Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG 70 70 6 3 500 250 150, -55~150 V V V A mW °C / W °C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Parameter V(BR)CBO 70 - - V IC=100µA, IE=0 Test condition Collector to Emitter Breakdown Voltage V(BR)CEO 70 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 1 µA VCB=40V, IE=0 Collector cut-off current ICEO - - 10 µA VCE=30V, IB=0 Emitter Cut-Off Current IEBO - - 1 µA VEB=6V, IC=0 DC Current Gain hFE 60 - 400 Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 Base to emitter Saturation Voltage VBE(sat) - - fT - 50 Transition Frequency http://www.SeCoSGmbH.com/ 04-Nov-2014 Rev. A VCE=2V, IC=1A V IC=2A, IB=0.2A 1.5 V IC=2A, IB=0.2A - MHz VCE=5V, IC=0.1A, f=10MHz Any changes of specification will not be informed individually. Page 1 of 1