Lattice GAL22V10D-10LPNI Gal 22v10 device datasheet Datasheet

GAL®22V10 Device Datasheet
September 2010
All Devices Discontinued!
Product Change Notifications (PCNs) have been issued to discontinue all devices in this
data sheet.
The original datasheet pages have not been modified and do not reflect those changes.
Please refer to the table below for reference PCN and current product status.
Product Line
GAL22V10D
Ordering Part Number
GAL22V10D-7LP
GAL22V10D-7LPN
GAL22V10D-10LP
GAL22V10D-10LPN
GAL22V10D-15LP
GAL22V10D-15LPN
GAL22V10D-25LP
GAL22V10D-25LPN
GAL22V10D-7LPI
GAL22V10D-7LPNI
GAL22V10D-10LPI
GAL22V10D-10LPNI
GAL22V10D-15LPI
GAL22V10D-15LPNI
GAL22V10D-20LPI
GAL22V10D-20LPNI
GAL22V10D-25LPI
GAL22V10D-25LPNI
GAL22V10D-10QP
GAL22V10D-10QPN
GAL22V10D-15QP
GAL22V10D-15QPN
GAL22V10D-25QP
GAL22V10D-25QPN
GAL22V10D-10LS
GAL22V10D-15LS
GAL22V10D-25LS
GAL22V10D-4LJ
GAL22V10D-4LJN
GAL22V10D-5LJ
GAL22V10D-5LJN
Product Status
Reference PCN
PCN#09-10
PCN#13-10
PCN#09-10
Discontinued
PCN#13-10
PCN#06-07
PCN#09-10
PCN#13-10
5555 N.E. Moore Ct.  Hillsboro, Oregon 97124-6421  Phone (503) 268-8000  FAX (503) 268-8347
Internet: http://www.latticesemi.com
Product Line
GAL22V10D
(Cont’d)
Ordering Part Number
GAL22V10D-7LJ
GAL22V10D-7LJN
GAL22V10D-10LJ
GAL22V10D-10LJN
GAL22V10D-15LJ
GAL22V10D-15LJN
GAL22V10D-25LJ
GAL22V10D-25LJN
GAL22V10D-7LJI
GAL22V10D-7LJNI
GAL22V10D-10LJI
GAL22V10D-10LJNI
GAL22V10D-15LJI
GAL22V10D-15LJNI
GAL22V10D-20LJI
GAL22V10D-20LJNI
GAL22V10D-25LJI
GAL22V10D-25LJNI
GAL22V10D-10QJ
GAL22V10D-10QJN
GAL22V10D-15QJ
GAL22V10D-15QJN
GAL22V10D-25QJ
GAL22V10D-25QJN
Product Status
Reference PCN
PCN#13-10
PCN#09-10
Discontinued
PCN#13-10
5555 N.E. Moore Ct.  Hillsboro, Oregon 97124-6421  Phone (503) 268-8000  FAX (503) 268-8347
Internet: http://www.latticesemi.com
Specifications GAL22V10
ree
Lead-Fage
P a c k ns
Optio le!
b
Availa
GAL22V10
High Performance E2CMOS PLD
Generic Array Logic™
Functional Block Diagram
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS® Advanced CMOS Technology
RESET
I/CLK
8
OLMC
I/O/Q
OLMC
I/O/Q
I
10
• ACTIVE PULL-UPS ON ALL PINS
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
I
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible
with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA Typical Icc on Low Power Device
— 45mA Typical Icc on Quarter Power Device
12
PROGRAMMABLE
AND-ARRAY
(132X44)
I
I
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
I
I
I
• TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
I
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
14
16
16
14
12
I
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
OLMC
10
I
8
I
PRESET
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
Pin Configuration
• LEAD-FREE PACKAGE OPTIONS
ESCRIPTION
4
The GAL22V10, at 4ns maximum propagation delay time, combines
a high performance CMOS process with Electrically Erasable (E2)
floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows
the GAL22V10 to consume much less power when compared to
bipolar 22V10 devices. E2 technology offers high speed (<100ms)
erase times, providing the ability to reprogram or reconfigure the
device quickly and efficiently.
I
2
I/O/Q
28
I/O/Q
Vcc
I/CLK
NC
I
I
PLCC
Description
DIP
26
5
25
I
I
I/O/Q
7
GAL22V10
NC
I
Top View
9
23
21
I
11
I/O/Q
I
I/O/Q
I/O/Q
I
I
I/O/Q
I
18
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
I/O/Q
I
I/O/Q
I
I/O/Q
I
I/O/Q
13
18
12
13
I
12
GND
I
I
I
I
I
GND
6
I
I
6
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
I/O/Q
I/O/Q
Vcc
24
GAL
22V10
I
I/O/Q
Top View
1
Vcc
I
GAL22V10
I/CLK
I
I
I
24
NC
SOIC
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
1
I/O/Q
I/O/Q
19
18
16
NC
I
14
I
12
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. The GAL22V10 is fully function/fuse map/parametric compatible with standard bipolar and CMOS 22V10 devices.
I/CLK
I/O/Q
GND
I
I/O/Q
Copyright © 2006 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
22v10_12
1
December 2006
Specifications GAL22V10
GAL22V10 Ordering Information
Conventional Packaging
Commercial Grade Specifications
Tpd (ns)
Tsu (ns)
Tco (ns)
4
2.5
3.5
140
GAL22V10D-4LJ
28-Lead PLCC
5
3
4
140
GAL22V10D-5LJ
28-Lead PLCC
7.5
Ordering #
Package
4. 5
4.5
140
GAL22V10D-7LP
24-Pin Plastic DIP
4.5
4.5
140
GAL22V10D-7LJ
28-Lead PLCC
7
7
55
GAL22V10D-10QP
24-Pin Plastic DIP
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
10
Icc (mA)
15
25
10
15
8
15
55
GAL22V10D-10QJ
28-Lead PLCC
130
GAL22V10D-10LP
24-Pin Plastic DIP
130
GAL22V10D-10LJ
28-Lead PLCC
30
GAL22V10D-10LS1
24-Pin SOIC
55
GAL22V10D-15QP
24-Pin Plastic DIP
55
GAL22V10D-15QJ
28-Lead PLCC
90
GAL22V10D-15LP
24-Pin Plastic DIP
90
GAL22V10D-15LJ
28-Lead PLCC
90
GAL22V10D-15LS1
24-Pin SOIC
55
GAL22V10D-25QP
24-Pin Plastic DIP
55
GAL22V10D-25QJ
28-Lead PLCC
90
GAL22V10D-25LP
24-Pin Plastic Dip
90
GAL22V10D-25LJ
28-Lead PLCC
90
GAL22V10D-25LS1
24-Pin SOIC
1. Discontinued per PCN #06-07. Contact Rochester Electronics for available inventory.
Industrial Grade Specifications
Tpd (ns)
Tsu (ns)
Tco (ns)
Icc (mA)
7.5
5
4.5
160
GAL22V10D-7LPI
24-Pin Plastic DIP
4.5
4.5
160
GAL22V10D-7LJI
28-Lead PLCC
7
7
160
GAL22V10D-10LPI
24-Pin Plastic DIP
160
GAL22V10D-10LJI
28-Lead PLCC
130
GAL22V10D-15LPI
24-Pin Plastic DIP
130
GAL22V10D-15LJI
28-Lead PLCC
130
GAL22V10D-20LPI
24-Pin Plastic DIP
130
GAL22V10D-20LJI
28-Lead PLCC
130
GAL22V10D-25LPI
24-Pin Plastic DIP
130
GAL22V10D-25LJI
28-Lead PLCC
10
15
20
25
10
14
15
8
10
15
Ordering #
2
Package
Specifications GAL22V10
Lead-Free Packaging
Commercial Grade Specifications
Tpd (ns)
Tsu (ns)
Tco (ns)
Icc (mA)
4
2.5
3.5
14 0
GAL22V10D-4LJN
Lead-Free 28-Lead PLCC
5
3
4
140
GAL22V10D-5LJN
Lead-Free 28-Lead PLCC
7.5
4.5
4. 5
14 0
GAL22V10D-7LPN
Lead-Free 24-Pin Plastic DIP
4.5
4.5
14 0
GAL22V10D-7LJN
Lead-Free 28-Lead PLCC
7
7
55
GAL22V10D-10QPN
Lead-Free 24-Pin Plastic DIP
55
GAL22V10D-10QJN
Lead-Free 28-Lead PLCC
130
GAL22V10D-10LPN
Package
Lead-Free 24-Pin Plastic DIP
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
10
Ordering #
15
25
10
8
15
15
130
GAL22V10D-10LJN
Lead-Free 28-Lead PLCC
55
GAL22V10D-15QPN
Lead-Free 24-Pin Plastic DIP
55
GAL22V10D-15QJN
Lead-Free 28-Lead PLCC
90
GAL22V10D-15LPN
Lead-Free 24-Pin Plastic DIP
90
GAL22V10D-15LJN
Lead-Free 28-Lead PLCC
55
GAL22V10D-25QPN
Lead-Free 24-Pin Plastic DIP
55
GAL22V10D-25QJN
Lead-Free 28-Lead PLCC
90
GAL22V10D-25LPN
Lead-Free 24-Pin Plastic Dip
90
GAL22V10D-25LJN
Lead-Free 28-Lead PLCC
Industrial Grade Specifications
Tpd (ns)
7.5
10
15
20
25
Tsu (ns)
Tco (ns)
Icc (mA)
Ordering #
Package
5
4.5
160
GAL22V10D-7LPNI
Lead-Free 24-Pin Plastic DIP
4.5
4.5
160
GAL22V10D-7LJNI
Lead-Free 28-Lead PLCC
7
7
160
GAL22V10D-10LPNI
Lead-Free 24-Pin Plastic DIP
160
GAL22V10D-10LJNI
Lead-Free 28-Lead PLCC
10
14
15
8
10
15
130
GAL22V10D-15LPNI
Lead-Free 24-Pin Plastic DIP
130
GAL22V10D-15LJNI
Lead-Free 28-Lead PLCC
130
GAL22V10D-20LPNI
Lead-Free 24-Pin Plastic DIP
130
GAL22V10D-20LJNI
Lead-Free 28-Lead PLCC
130
GAL22V10D-25LPNI
Lead-Free 24-Pin Plastic Dip
130
GAL22V10D-25LJNI
Lead-Free 28-Lead PLCC
Part Number Description
XXXXXXXX _ XX
X XX X
GAL22V10D Device Name
Grade
Speed (ns)
L = Low Power
Power
Q = Quarter Power
Blank = Commercial
I = Industrial
Package P = Plastic DIP
PN = Lead-Free Plastic DIP
J = PLCC
JN = Lead-Free PLCC
S = SOIC
3
Specifications GAL22V10
Output Logic Macrocell (OLMC)
The GAL22V10 has a variable number of product terms per OLMC.
Of the ten available OLMCs, two OLMCs have access to eight
product terms (pins 14 and 23, DIP pinout), two have ten product
terms (pins 15 and 22), two have twelve product terms (pins 16 and
21), two have fourteen product terms (pins 17 and 20), and two
OLMCs have sixteen product terms (pins 18 and 19). In addition
to the product terms available for logic, each OLMC has an additional product-term dedicated to output enable control.
The GAL22V10 has a product term for Asynchronous Reset (AR)
and a product term for Synchronous Preset (SP). These two product terms are common to all registered OLMCs. The Asynchronous
Reset sets all registers to zero any time this dedicated product term
is asserted. The Synchronous Preset sets all registers to a logic
one on the rising edge of the next clock pulse after this product term
is asserted.
NOTE: The AR and SP product terms will force the Q output of the
flip-flop into the same state regardless of the polarity of the output.
Therefore, a reset operation, which sets the register output to a zero,
may result in either a high or low at the output pin, depending on
the pin polarity chosen.
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
The output polarity of each OLMC can be individually programmed
to be true or inverting, in either combinatorial or registered mode.
This allows each output to be individually configured as either active
high or active low.
A R
D
4 TO 1
MUX
Q
CLK
Q
SP
2 TO 1
MUX
GAL22V10 OUTPUT LOGIC MACROCELL (OLMC)
Output Logic Macrocell Configurations
NOTE: In registered mode, the feedback is from the /Q output of
the register, and not from the pin; therefore, a pin defined as registered is an output only, and cannot be used for dynamic
I/O, as can the combinatorial pins.
Each of the Macrocells of the GAL22V10 has two primary functional
modes: registered, and combinatorial I/O. The modes and the
output polarity are set by two bits (SO and S1), which are normally
controlled by the logic compiler. Each of these two primary modes,
and the bit settings required to enable them, are described below
and on the following page.
COMBINATORIAL I/O
In combinatorial mode the pin associated with an individual OLMC
is driven by the output of the sum term gate. Logic polarity of the
output signal at the pin may be selected by specifying that the output
buffer drive either true (active high) or inverted (active low). Output tri-state control is available as an individual product-term for
each output, and may be individually set by the compiler as either
“on” (dedicated output), “off” (dedicated input), or “product-term
driven” (dynamic I/O). Feedback into the AND array is from the pin
side of the output enable buffer. Both polarities (true and inverted)
of the pin are fed back into the AND array.
REGISTERED
In registered mode the output pin associated with an individual
OLMC is driven by the Q output of that OLMC’s D-type flip-flop.
Logic polarity of the output signal at the pin may be selected by
specifying that the output buffer drive either true (active high) or
inverted (active low). Output tri-state control is available as an individual product-term for each OLMC, and can therefore be defined
by a logic equation. The D flip-flop’s /Q output is fed back into the
AND array, with both the true and complement of the feedback
available as inputs to the AND array.
4
Specifications GAL22V10
Registered Mode
AR
AR
Q
Q
D
A
D LL
IS
C DE
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U
ED
D
CLK
Q
CLK
SP
Q
SP
ACTIVE LOW
ACTIVE HIGH
S0 = 0
S1 = 0
S0 = 1
S1 = 0
Combinatorial Mode
ACTIVE LOW
ACTIVE HIGH
S0 = 0
S1 = 1
S0 = 1
S1 = 1
5
Specifications GAL22V10
GAL22V10 Logic Diagram / JEDEC Fuse Map
DIP (PLCC) Package Pinouts
1 (2)
0
4
8
12
16
20
24
28
32
36
40
ASYNCHRONOUS RESET
(TO ALL REGISTERS)
0000
0044
.
.
.
0396
8
OLMC
S0
5808
S1
5809
0440
.
.
.
.
0880
10
OLMC
22 (26)
A
D LL
IS
C DE
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U
ED
S0
5810
S1
5811
23 (27)
2 (3)
0924
.
.
.
.
.
1452
12
OLMC
S0
5812
S1
5813
3 (4)
1496
.
.
.
.
.
.
2112
14
OLMC
21 (25)
20 (24)
S0
5814
S1
5815
4 (5)
2156
.
.
.
.
.
.
.
2860
16
OLMC
19 (23)
S0
5816
S1
5817
5 (6)
2904
.
.
.
.
.
.
.
3608
16
OLMC
18 (21)
S0
5818
S1
5819
6 (7)
3652
.
.
.
.
.
.
4268
14
OLMC
17 (20)
S0
5820
S1
5821
7 (9)
4312
.
.
.
.
.
4840
12
OLMC
S0
5822
S1
5823
8 (10)
4884
.
.
.
.
5324
10
OLMC
S0
5824
S1
5825
9 (11)
5368
.
.
.
5720
8
OLMC
S0
5826
S1
5827
10 (12)
SYNCHRONOUS PRESET
(TO ALL REGISTERS)
5764
11 (13)
5828, 5829 ...
Electronic Signature
... 5890, 5891
Byte 7 Byte 6 Byte 5 Byte 4 Byte 3 Byte 2 Byte 1 Byte 0
M
S
B
L
S
B
6
16 (19)
15 (18)
14 (17)
13 (16)
Specifications
SpecificationsGAL22V10D
GAL22V10
Absolute Maximum Ratings1
Recommended Operating Conditions
Commercial Devices:
Ambient Temperature (TA) ............................. 0 to +75°C
Supply voltage (VCC)
with Respect to Ground ..................... +4.75 to +5.25V
Supply voltage VCC ....................................... -0.5 to +7V
Input voltage applied ........................... -2.5 to VCC +1.0V
Off-state output voltage applied........... -2.5 to VCC +1.0V
Storage Temperature .................................. -65 to 150°C
Ambient Temperature with
Power Applied ......................................... -55 to 125°C
Industrial Devices:
Ambient Temperature (TA) ............................ -40 to 85°C
Supply voltage (VCC)
with Respect to Ground ..................... +4.50 to +5.50V
A
D LL
IS
C DE
O
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ED
1. Stresses above those listed under the “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress only ratings and functional operation of the device
at these or at any other conditions above those indicated in
the operational sections of this specification is not implied
(while programming, follow the programming specifications).
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOL
VIL
VIH
IIL1
IIH
VOL
VOH
IOL
IOH
IOS2
MIN.
TYP.3
MAX.
UNITS
Input Low Voltage
Vss – 0.5
—
0.8
V
Input High Voltage
2.0
—
Vcc+1
V
PARAMETER
CONDITION
Input or I/O Low Leakage Current
0V ≤ VIN ≤ VIL (MAX.)
—
—
–100
μA
Input or I/O High Leakage Current
3.5V ≤ VIN ≤ VCC
—
—
10
μA
Output Low Voltage
IOL = MAX. Vin = VIL or VIH
—
—
0.4
V
Output High Voltage
IOH = MAX. Vin = VIL or VIH
2.4
—
—
V
Low Level Output Current
—
—
16
mA
High Level Output Current
—
—
–3.2
mA
–30
—
–130
mA
Output Short Circuit Current
COMMERCIAL
ICC
Operating Power
Supply Current
INDUSTRIAL
ICC
Operating Power
Supply Current
VCC = 5V
VOUT = 0.5V TA = 25°C
VIL = 0.5V VIH = 3.0V
L-4/-5/-7
—
90
140
mA
ftoggle = 15MHz Outputs Open
L-10
—
90
130
mA
L-15/-25
—
75
90
mA
Q-10/-15/-25
—
45
55
mA
VIL = 0.5V VIH = 3.0V
L-7/-10
—
90
160
mA
ftoggle = 15MHz Outputs Open
L-15/-20/-25
—
75
130
mA
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) Typical values are at Vcc = 5V and TA = 25 °C
7
Specifications
GAL22V10D
Specifications
GAL22V10
AC Switching Characteristics
Over Recommended Operating Conditions
PARAM
TEST
COND.1
tpd
tco
tcf2
tsu
th
COM
COM
COM/IND
-4
-5
-7
DESCRIPTION
UNITS
MIN. MAX. MIN. MAX. MIN. MAX.
Input or I/O to Combinatorial Output
1
4
1
5
1
7.5
ns
A
Clock to Output Delay
1
3.5
1
4
1
4.5
ns
—
Clock to Feedback Delay
—
2.5
—
3
—
3
ns
—
Setup Time, Input or Fdbk before Clk↑
2.5
—
3
—
4.5
—
ns
—
Hold Time, Input or Fdbk after Clk↑
0
—
0
—
0
—
ns
A
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
167
—
142.8
—
111
—
MHz
A
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
200
—
166
—
133
—
MHz
A
Maximum Clock Frequency with
No Feedback
250
—
200
—
166
—
MHz
—
Clock Pulse Duration, High
2
—
2.5
—
3
—
ns
—
Clock Pulse Duration, Low
2
—
2.5
—
3
—
ns
B
Input or I/O to Output Enabled
1
5
1
6
1
7.5
ns
tdis
tar
C
Input or I/O to Output Disabled
1
5
1
5.5
1
7.5
ns
A
Input or I/O to Asynch. Reset of Reg.
1
4.5
1
5.5
1
9
ns
tarw
tarr
tspr
—
Asynch. Reset Pulse Duration
4.5
—
4.5
—
7
—
ns
—
Asynch. Reset to Clk↑ Recovery Time
3
—
4
—
5
—
ns
—
Synch. Preset to Clk↑ Recovery Time
3
—
4
—
5
—
ns
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
A
fmax3
twh
twl
ten
1) Refer to Switching Test Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these
parameters.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOL
PARAMETER
MAXIMUM*
UNITS
TEST CONDITIONS
CI
Input Capacitance
8
pF
VCC = 5.0V, VI = 2.0V
CI/O
I/O Capacitance
8
pF
VCC = 5.0V, VI/O = 2.0V
*Characterized but not 100% tested.
8
Specifications
SpecificationsGAL22V10D
GAL22V10
AC Switching Characteristics
Over Recommended Operating Conditions
PARAM.
TEST
COND.1
COM / IND
IND
COM / IND
-10
-15
-20
-25
DESCRIPTION
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
UNITS
A
Input or I/O to Comb. Output
1
10
3
15
3
20
3
25
ns
A
Clock to Output Delay
1
7
2
8
2
10
2
15
ns
—
Clock to Feedback Delay
—
2.5
—
2.5
—
8
—
13
ns
—
Setup Time, Input or Fdbk before Clk↑
6
—
10
—
12
—
15
—
ns
—
Hold Time, Input or Fdbk after Clk↑
0
—
0
—
0
—
0
—
ns
A
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
83.3
—
55.5
—
41.6
—
33.3
—
MHz
A
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
110
—
80
—
45.4
—
35.7
—
MHz
A
Maximum Clock Frequency with
No Feedback
125
—
83.3
—
50
—
38.5
—
MHz
—
Clock Pulse Duration, High
4
—
6
—
10
—
13
—
ns
—
Clock Pulse Duration, Low
4
—
6
—
10
—
13
—
ns
B
Input or I/O to Output Enabled
1
10
3
15
3
20
3
25
ns
C
Input or I/O to Output Disabled
1
9
3
15
3
20
3
25
ns
A
Input or I/O to Asynch. Reset of Reg.
1
13
3
20
3
25
3
25
ns
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tpd
tco
tcf2
COM / IND
tsu
th
fmax3
twh
twl
ten
tdis
tar
tarw
tarr
—
Asynch. Reset Pulse Duration
8
—
15
—
20
—
25
—
ns
—
Asynch. Reset to Clk↑ Recovery Time
8
—
10
—
20
—
25
—
ns
tspr
—
Synch. Preset to Clk↑ Recovery Time
8
—
10
—
14
—
15
—
ns
1) Refer to Switching Test Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOL
PARAMETER
MAXIMUM*
UNITS
TEST CONDITIONS
CI
Input Capacitance
8
pF
VCC = 5.0V, VI = 2.0V
CI/O
I/O Capacitance
8
pF
VCC = 5.0V, VI/O = 2.0V
*Characterized but not 100% tested.
9
Specifications GAL22V10
Switching Waveforms
INPUT or
I/O FEEDBACK
INPUT or
I/O FEEDBACK
VALID INPUT
VALID INPUT
tsu
th
t pd
CLK
COMBINATORIAL
OUTPUT
tco
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REGISTERED
OUTPUT
Combinatorial Output
1/ fmax
(external fdbk)
Registered Output
INPUT or
I/O FEEDBACK
t dis
t en
OUTPUT
CLK
1/ f max (internal fdbk)
Input or I/O to Output Enable/Disable
tsu
t cf
REGISTERED
FEEDBACK
fmax with Feedback
tw l
tw h
CLK
1 / fm a x
(w/o fdbk)
Clock Width
INPUT or
I/O FEEDBACK
DRIVING SP
INPUT or
I/O FEEDB ACK
DRIVI NG AR
tsu
t spr
th
tarw
CLK
CLK
tarr
tco
R E G I S T ER E D
OUTPUT
REGISTERED
OUTPUT
tar
Synchronous Preset
Asynchronous Reset
10
Specifications GAL22V10
fmax Descriptions
CL K
LOGIC
ARR AY
CLK
LOGIC
ARRAY
R EG I S T E R
REGISTER
ts u
tc o
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fmax with External Feedback 1/(tsu+tco)
t cf
t pd
Note: fmax with external feedback is calculated from measured tsu and tco.
fmax with Internal Feedback 1/(tsu+tcf)
CLK
LOGIC
ARRAY
Note: tcf is a calculated value, derived by subtracting tsu from the period of fmax w/internal
feedback (tcf = 1/fmax - tsu). The value of tcf is
used primarily when calculating the delay from
clocking a register to a combinatorial output
(through registered feedback), as shown above.
For example, the timing from clock to a combinatorial output is equal to tcf + tpd.
REGISTER
tsu + th
fmax with No Feedback
Note: fmax with no feedback may be less
than 1/(twh + twl). This is to allow for a
clock duty cycle of other than 50%.
11
Specifications GAL22V10
Switching Test Conditions
Input Pulse Levels
GAL22V10D-4 Output Load Conditions (see figure below)
GND to 3.0V
Input Rise and
D-4/-5/-7
1.5ns 10% – 90%
Fall Times
D-10/-15/-20/-25
2.0ns 10% – 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
Test Condition
A
B
See Figure
C
CL
50Ω
50pF
Z to Active High at 1.9V
50Ω
50pF
Z to Active Low at 1.0V
50Ω
50pF
Active High to Z at 1.9V
50Ω
50pF
Active Low to Z at 1.0V
50Ω
50pF
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3-state levels are measured 0.5V from steady-state active
level.
R1
+1.45V
Output Load Conditions (except D-4) (see figure below)
R1
R2
CL
300Ω
390Ω
50pF
Active High
∞
390Ω
50pF
Active Low
300Ω
390Ω
50pF
Active High
∞
390Ω
5pF
Active Low
300Ω
390Ω
5pF
Test Condition
A
B
C
TEST POINT
FROM OUTPUT (O/Q)
UNDER TEST
+5V
R1
FROM OUTPUT (O/Q)
UNDER TEST
TEST POINT
R2
C L*
*C L INCLUDES TEST FIXTURE AND PROBE CAPACITANCE
12
Z0 = 50Ω, CL*
R1
Specifications GAL22V10
Electronic Signature
Output Register Preload
An electronic signature (ES) is provided in every GAL22V10
device. It contains 64 bits of reprogrammable memory that can
contain user-defined data. Some uses include user ID codes,
revision numbers, or inventory control. The signature data is
always available to the user independent of the state of the security cell.
When testing state machine designs, all possible states and state
transitions must be verified in the design, not just those required
in the normal machine operations. This is because certain events
may occur during system operation that throw the logic into an
illegal state (power-up, line voltage glitches, brown-outs, etc.). To
test a design for proper treatment of these conditions, a way must
be provided to break the feedback paths, and force any desired
(i.e., illegal) state into the registers. Then the machine can be
sequenced and the outputs tested for correct next state conditions.
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The electronic signature is an additional feature not present in
other manufacturers' 22V10 devices. To use the extra feature of
the user-programmable electronic signature it is necessary to
choose a Lattice Semiconductor 22V10 device type when compiling a set of logic equations. In addition, many device programmers have two separate selections for the device, typically a
GAL22V10 and a GAL22V10-UES (UES = User Electronic Signature) or GAL22V10-ES. This allows users to maintain compatibility with existing 22V10 designs, while still having the option to
use the GAL device's extra feature.
The GAL22V10 device includes circuitry that allows each registered output to be synchronously set either high or low. Thus, any
present state condition can be forced for test sequencing. If
necessary, approved GAL programmers capable of executing test
vectors perform output register preload automatically.
Input Buffers
The JEDEC map for the GAL22V10 contains the 64 extra fuses
for the electronic signature, for a total of 5892 fuses. However,
the GAL22V10 device can still be programmed with a standard
22V10 JEDEC map (5828 fuses) with any qualified device programmer.
GAL22V10 devices are designed with TTL level compatible input buffers. These buffers have a characteristically high impedance, and present a much lighter load to the driving logic than bipolar TTL devices.
Security Cell
The input and I/O pins also have built-in active pull-ups. As a result, floating inputs will float to a TTL high (logic 1). However,
Lattice Semiconductor recommends that all unused inputs and
tri-stated I/O pins be connected to an adjacent active input, Vcc,
or ground. Doing so will tend to improve noise immunity and
reduce Icc for the device. (See equivalent input and I/O schematics on the following page.)
A security cell is provided in every GAL22V10 device to prevent
unauthorized copying of the array patterns. Once programmed,
this cell prevents further read access to the functional bits in the
device. This cell can only be erased by re-programming the
device, so the original configuration can never be examined once
this cell is programmed. The Electronic Signature is always available to the user, regardless of the state of this control cell.
Typical Input Current
I n p u t C u r r e n t (u A )
Latch-Up Protection
GAL22V10 devices are designed with an on-board charge pump
to negatively bias the substrate. The negative bias is of sufficient
magnitude to prevent input undershoots from causing the circuitry
to latch. Additionally, outputs are designed with n-channel pullups
instead of the traditional p-channel pullups to eliminate any possibility of SCR induced latching.
0
-20
-40
-60
0
1.0
2.0
3.0
In p u t V o lt ag e ( V o lt s)
Device Programming
GAL devices are programmed using a Lattice Semiconductorapproved Logic Programmer, available from a number of manufacturers (see the the GAL Development Tools section). Complete programming of the device takes only a few seconds. Erasing of the device is transparent to the user, and is done automatically as part of the programming cycle.
13
4.0
5.0
Specifications GAL22V10
Power-Up Reset
Vcc (min.)
Vcc
t su
t wl
CLK
t pr
Internal Register
Reset to Logic "0"
ACTIVE LOW
OUTPUT REGISTER
Device Pin
Reset to Logic "1"
ACTIVE HIGH
OUTPUT REGISTER
Device Pin
Reset to Logic "0"
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INTERNAL REGISTER
Q - OUTPUT
Circuitry within the GAL22V10 provides a reset signal to all registers during power-up. All internal registers will have their Q outputs set low after a specified time (tpr, 1μs MAX). As a result, the
state on the registered output pins (if they are enabled) will be
either high or low on power-up, depending on the programmed
polarity of the output pins. This feature can greatly simplify state
machine design by providing a known state on power-up. The
timing diagram for power-up is shown below. Because of the asyn-
chronous nature of system power-up, some conditions must be
met to guarantee a valid power-up reset of the GAL22V10. First,
the Vcc rise must be monotonic. Second, the clock input must
be at static TTL level as shown in the diagram during power up.
The registers will reset within a maximum of tpr time. As in normal system operation, avoid clocking the device until all input and
feedback path setup times have been met. The clock must also
meet the minimum pulse width requirements.
Input/Output Equivalent Schematics
PIN
PIN
Feedback
Vcc
Active Pull-up
Circuit
Active Pull-up
Circuit
(Vref Typical = 3.2V)
Vcc
ESD
Protection
Circuit
Vref
Tri-State
Control
Vcc
PIN
Vcc
(Vref Typical = 3.2V)
Vref
Data
Output
PIN
ESD
Protection
Circuit
Feedback
(To Input Buffer)
Typical Input
Typical Output
14
Specifications GAL22V10
GAL22V10D-4/-5/-7/-10L (PLCC): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1
0.95
RISE
FALL
1.05
1
0.95
RISE
FALL
1.05
Normalized Tsu
Normalized Tco
RISE
FALL
1.1
1
0.95
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Normalized Tpd
1.05
Normalized Tsu vs Vcc
Normalized Tco vs Vcc
1.1
1.1
0.9
0.9
4.5
4.75
5
5.25
0.9
4.5
5.5
4.75
Supply Voltage (V)
5.25
5.5
4.5
Normalized Tpd vs Temp
Normalized Tco vs Temp
1.1
1
1.2
RISE
FALL
1.1
1
0.9
-55
25
50
75
100
1.1
1
0.8
-25
Temperature (deg. C)
25
50
75
125
-55
-25
0
-0.1
RISE
FALL
-0.2
-0.1
-0.2
RISE
FALL
-0.3
-0.4
1
2
3
4
5
6
7
8
9
10
1
Number of Outputs Switching
2
3
4
5
6
7
8
9
10
Number of Outputs Switching
Delta Tpd vs Output Loading
Delta Tco vs Output Loading
12
12
Delta Tco (ns)
RISE
FALL
8
4
0
-4
50
100
150
200
250
300
Output Loading (pF)
RISE
FALL
8
4
0
-4
0
25
50
75
100
Temperature (deg. C)
Delta Tco vs # of Outputs
Switching
0
-0.3
Delta Tpd (ns)
100
Temperature (deg. C)
Delta Tpd vs # of Outputs
Switching
0
Delta Tpd (ns)
0
125
Delta Tco (ns)
0
RISE
FALL
0.9
0.8
-25
5.5
Normalized Tsu vs Temp
0.9
-55
5.25
1.3
Normalized T
Normalized Tco
RISE
FALL
5
Supply Voltage (V)
1.2
1.2
4.75
Supply Voltage (V)
1.3
Normalized Tpd
5
0
50
100
150
200
250
Output Loading (pF)
15
300
125
Specifications GAL22V10
GAL22V10D-4/-5/-7/-10L (PLCC): Typical AC and DC Characteristic Diagrams
Vol vs Iol
Voh vs Ioh
Voh vs Ioh
3.95
4
0.6
3.85
3.75
Vol (V)
Voh (V)
0.4
Voh (V)
3
2
0.2
3.65
3.55
3.45
3.35
1
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3.25
3.15
0.00
0
0
0
5
10
15
20
25
30
35
0
40
5
10 1 5 2 0 2 5 3 0 3 5 4 0 4 5 50 55 60
Normalized Icc vs Vcc
Normalized Icc vs Temp
0.9
5
5.25
1
0.9
0.7
-55
5.5
Supply Voltage (V)
0
25
50
88
100
125
5
20
4
40
3
2
60
80
1
100
0
0
0.5
1
1.5
2
2.5
3
Vin (V)
3.5
4
4.5
5
-3
1.05
1
-2.5
-2
-1.5
Vik (V)
16
-1
-0.5
1
15
25
50
Frequency (MHz)
Input Clamp (Vik)
0
Iik (mA)
Delta Icc (mA)
Delta Icc vs Vin (1 input)
1.1
0.95
-25
Temperature (deg. C)
6
5.00
1.15
1.1
0.8
4.75
4.00
Normalized Icc vs Freq
Normalized Icc
Normalized Icc
Normalized Icc
1
3.00
1.2
1.2
1.1
2.00
Ioh(mA)
1.3
1.2
0.8
4.5
1.00
Ioh(mA)
Iol (mA)
1
75
1 00
Specifications GAL22V10
GAL22V10D-7/10L (PDIP): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.2
1
0.95
RISE
FALL
Normalized Tsu
Normalized Tco
RISE
FALL
1.05
1.05
1
RISE
FALL
1.1
1
0.9
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Normalized Tpd
Normalized Tsu vs Vcc
Normalized Tco vs Vcc
1.1
1.1
0.8
0.95
0.9
4.5
4.75
5
5.25
4.5
5.5
4.75
5.25
4.5
5.5
Normalized Tpd vs Temp
1
RISE
FALL
1.2
RISE
FALL
1.1
1
0.9
0.9
1.1
1
0.9
25
50
75
100
0.8
-55
125
-25
0
25
50
75
100
0.8
-55
125
-25
Temperature (deg. C)
Temperature (deg. C)
Delta Tpd vs # of Outputs
Switching
0
-0.1
-0.1
-0.2
-0.2
-0.3
-0.3
-0.4
-0.5
-0.6
-0.7
RISE
FALL
-0.8
-0.9
0
-0.4
-0.5
-0.6
-0.7
RISE
FALL
-0.8
-0.9
-1
-1
-1.1
-1.1
1
2
3
4
5
6
7
8
9
10
1
Number of Outputs Switching
2
3
4
5
6
7
8
9
10
Number of Outputs Switching
Delta Tpd vs Output Loading
Delta Tco vs Output Loading
12
12
Delta Tco (ns)
RISE
FALL
8
4
0
-4
RISE
FALL
8
4
0
-4
0
50
100
150
200
250
300
Output Loading (pF)
0
50
100
150
200
250
Output Loading (pF)
17
25
50
75
100
Temperature (deg. C)
Delta Tco vs # of Outputs
Switching
0
Delta Tco (ns)
0
Delta Tpd (ns)
-25
Delta Tpd (ns)
0.8
-55
5.5
1.3
Normalized Tsu
Normalized Tco
1.1
5.25
Normalized Tsu vs Temp
1.2
RISE
FALL
5
Supply Voltage (V)
Normalized Tco vs Temp
1.3
1.2
4.75
Supply Voltage (V)
Supply Voltage (V)
Normalized Tpd
5
300
125
Specifications GAL22V10
GAL22V10D-7/10L (PDIP): Typical AC and DC Characteristic Diagrams
Vol vs Iol
Voh vs Ioh
0.5
Voh vs Ioh
4
3.8
3.7
0.4
3.6
3
0.2
Voh (V)
Voh (V)
Vol (V)
3.5
0.3
2
3.4
3.3
3.2
3.1
1
0.1
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3
2.9
0
0
0
5
10
15
20
25
0
30
5
10
15
30
35
1.1
1.2
Normalized Icc
1.3
1.05
1
0.95
0.9
0.85
5
5.25
1
0.9
9
10
8
20
7
30
6
40
Iik (mA)
0
5
4
25
100
60
70
2
80
1
90
0
0
0.5
1
1.5
2
2.5
3
Vin (V)
3.5
4
4.5
5
100
-2.5
1.05
-2
-1.5
-1
Vik (V)
18
-0.5
1
15
25
50
Frequency (MHz)
50
3
1.1
0.95
0
Input Clamp (Vik)
Delta Isb vs Vin (1 input)
5.00
1
Temperature (deg. C)
10
4.00
Normalized Icc vs Freq
1.1
Supply Voltage (V)
3.00
1.15
0.7
-55
5.5
2.00
1.2
0.8
4.75
1.00
Ioh (mA)
Normalized Icc vs Temp
1.15
4.5
2.8
0.00
40
Normalized Icc
Normalized Icc vs Vcc
Normalized Icc
25
Ioh (mA)
Iol (mA)
Delta Icc (mA)
20
0
75
100
Specifications GAL22V10
GAL22V10D-10Q and Slower (L & Q): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.2
1.15
0.95
Normalized Tsu
1
RISE
FALL
1.1
Normalized Tco
RISE
FALL
1.05
1.05
1
0.95
RISE
FALL
1.1
1
0.9
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Normalized Tpd
Normalized Tsu vs Vcc
Normalized Tco vs Vcc
1.1
0.9
4.5
4.75
5
5.25
0.9
4.5
5.5
4.75
Supply Voltage (V)
0.8
4.5
5.5
1.1
1
0.9
5.25
5.5
Normalized Tsu vs Temp
1.45
1.35
RISE
FALL
1.2
Normalized Tsu
Normalized Tco
RISE
FALL
5
Supply Voltage (V)
1.3
1.2
4.75
Normalized Tco vs Temp
Normalized Tpd vs Temp
1.1
1
0.9
RISE
FALL
1.25
1.15
1.05
0.95
0.85
25
50
75
100
125
0.8
-55
Temperature (deg. C)
0
25
50
75
100
0.75
-55
1 25
-25
Temperature (deg. C)
Delta Tpd vs # of Outputs
Switching
0
Delta Tpd (ns)
-25
-0.4
RISE
FALL
-0.8
-1.2
1
2
3
4
5
6
7
8
9
0
-0.4
RISE
FALL
-0.8
-1.2
10
1
2
Number of Outputs Switching
3
4
5
6
7
8
9
10
Number of Outputs Switching
Delta Tpd vs Output Loading
Delta Tco vs Output Loading
20
20
16
16
RISE
FALL
12
8
4
0
RISE
FALL
12
8
4
0
-4
-4
-8
0
50
100
150
200
250
0
3 00
50
100
150
200
250
Output Loading (pF)
Output Loading (pF)
19
25
50
75
Temperature (deg. C)
Delta Tco vs # of Outputs
Switching
0
Delta Tco (ns)
0
Delta Tco (ns)
-25
Delta Tpd (ns)
Normalized Tpd
5.25
Supply Voltage (V)
1.3
0.8
-55
5
3 00
100
1 25
Specifications GAL22V10
GAL22V10D-10Q and Slower (L & Q): Typical AC and DC Characteristic Diagrams
Vol vs Iol
Voh vs Ioh
Voh vs Ioh
4.5
0.6
4.5
4
3.5
4
Voh (V)
Vol (V)
0.2
Voh (V)
3
0.4
2.5
2
1.5
3.5
3
1
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
0.5
0
0
0
5
10
15
20
25
30
35
0
40
20
Normalized Icc vs Vcc
1
0.9
1.4
1.25
1.3
1.15
1.05
0.95
0.85
5
5.25
5.5
0.75
-55
Supply Voltage (V)
0
25
50
88
100
1 25
0
10
6
30
Iik (mA)
Delta Icc (mA)
20
5
4
3
40
50
60
2
70
1
80
0
0
0.5
1
1.5
2
2.5
3
Vin (V)
3.5
4
4.5
5
90
-2.5
4.00
5.00
1.2
1.1
1
-2
-1.5
-1
Vik (V)
20
-0.5
1
15
25
50
Frequency (MHz)
Input Clamp (Vik)
Delta Icc vs Vin (1 input)
3.00
0.9
-25
Temperature (deg. C)
7
2.00
Normalized Icc vs Freq
1.35
Normalized Icc
Normalized Icc
1.1
4.75
1.00
Ioh (mA)
Normalized Icc vs Temp
1.2
0.8
4.5
2.5
0.00
60
Ioh (mA)
Iol (mA)
Normalized Icc
40
0
75
1 00
Specifications GAL22V10
Notes
Revision History
Version
Change Summary
-
22v10_08
Previous Lattice release.
August 2004
22v10_09
Added lead-free package options.
July 2006
22v10_10
Corrected SOIC pin configuration diagram. Pin 13.
August 2006
22v10_11
Updated for lead-free package options.
December 2006
22v10_12
Corrected Icc in the Ordering Part Number section on pages 2-3.
A
D LL
IS
C DE
O
N VIC
TI
N ES
U
ED
Date
21
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