Vishay BU1006A Enhanced powerbridge rectifier Datasheet

New Product
BU1006A thru BU1010A
Vishay General Semiconductor
Enhanced PowerBridge® Rectifiers
FEATURES
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g.
BU1006A5S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
PowerBridge®
~
~
-
+ Case Style BU
+
~
~
~
~
+
-
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for switching power supply, home
appliances and white-goods applications.
Epoxy meets UL 94 V-0 flammability rating.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
600 V, 800 V, 1000 V
IFSM
90 A
IR
5 µA
VF at IF = 5 A
0.94 V
TJ max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOL
BU1006A
BU1008A
BU1010A
UNIT
VRRM
600
800
1000
V
(1)
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
Rating for fusing (t < 8.3 ms) TJ = 25 °C
Operating junction and storage temperature range
TC = 90 °C
TA = 25 °C (2)
IO
10
3.0
A
IFSM
90
A
I 2t
33
A 2s
TJ, TSTG
- 55 to + 150
°C
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 89294
Revision: 15-Mar-11
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward
voltage per diode (1)
IF = 5.0 A
TA = 25 °C
TA = 125 °C
VF
1.02
0.94
1.10
1.00
V
Maximum reverse current per diode
rated VR
TA = 25 °C
TA = 125 °C
IR
45
5.0
250
µA
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
30
-
pF
Note
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006A
BU1008A
(1)
RJC
RJA (2)
Typical thermal resistance
BU1010A
UNIT
3.0
20
°C/W
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BU1006A-M3/45
4.48
45
20
Tube
BU1006A-M3/51
4.48
51
250
Paper tray
BU1006A5S-M3/45
4.48
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
4
Average Forward Rectified Current (A)
Average Forward Output Current (A)
12
10
With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
8
6
TC
TC
4
2
0
3
2
1
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
150
Document Number: 89294
For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
[email protected], [email protected], [email protected]
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
2
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
1000
Instantaneous Reverse Current (µA)
Forward Power Dissipation (W)
24
20
16
12
8
4
0
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0
1
2
3
4
5
6
7
8
9
10
11
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Forward Power Dissipation
Figure 5. Typical Reverse Characteristics Per Diode
100
100
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TJ = 150 °C
100
10
1
TJ = 125 °C
TJ = 25 °C
0.1
0.01
0.2
10
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 89294
Revision: 15-Mar-11
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
View A
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.080 (2.03)
0.060 (1.52)
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
+
9°
TYP.
~
~
0.085 (2.16)
0.065 (1.65)
-
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.190 (4.83)
0.210 (5.33)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Document Number: 89294
For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
[email protected], [email protected], [email protected]
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
4
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
+
9°
TYP.
0.020R (TYP.)
~ ~
-
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
5°
TYP.
0.219 (5.55)
MAX.
0.315 (8.0)
0.276 (7.0)
0.134 (3.40)
0.087 (2.20)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
2.5 mm MIN.
Heatsink
2.5 mm MIN.
By Safety Requirements
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 89294
Revision: 15-Mar-11
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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