FDN5632N_F085 tm ® N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications RDS(on) = 98mΩ at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDN5632N_F085 Rev. A (W) 1 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET September 2008 Symbol VDSS Drain to Source Voltage VGS ID PD Parameter Ratings 60 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 1.7 Pulsed 10 Power Dissipation TJ, TSTG Operating and Storage Temperature A 1.1 W -55 to +150 oC Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 75 o 111 oC/W C/W Package Marking and Ordering Information Device Marking 5632 Device FDN5632N_F085 Package SSOT3 Reel Size 7” Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 60 - - V - - 1 - - 250 µA VGS = ±20V - - ±100 nA VGS = VDS, ID = 250µA 1 2.0 3 V ID = 1.7A, VGS= 10V - 57 82 ID = 1.6A, VGS= 6V - VDS = 48V, TA = 125oC VGS = 0V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 1.6A, VGS= 4.5V 62 88 70 98 135 mΩ ID = 1.7A, VGS= 10V, TA = 150oC - 107 VDS = 15V, VGS = 0V, f = 1MHz - 475 - pF - 60 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 30 - RG Gate Resistance f = 1MHz - 1.4 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 9.2 12 nC Qgs Gate to Source Gate Charge - 1.5 - nC Qgd Gate to Drain “Miller“ Charge - 1.4 - nC FDN5632N_F085 Rev. A (W) 2 VDD = 20V ID = 1.7A www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 30 ns td(on) Turn-On Delay Time - 15 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff VDD = 30V, ID = 1.0A VGS = 10V, RGEN = 6Ω - 1.7 - ns - 5.2 - ns Fall Time - 1.3 - ns Turn-Off Time - - 12.9 ns ISD = 1.7A - 0.8 1.25 ISD = 0.85A - 0.8 1.0 - 16.0 21 ns - 7.9 10.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 1.7A, dISD/dt = 100A/µs V This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDN5632N_F085 Rev. A (W) 3 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 3 1.2 2 0.8 0.6 VGS = 10V VGS = 4.5V 1 0.4 0.2 o RθJA = 111 C/W 0 0.0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 25 150 50 75 100 125 150 TA, AMBIENT TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Ambient Temperature Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 111 C / W 0.01 -3 -2 10 10 -1 10 0 1 10 10 t, RECTANGULAR PULSE DURATION(s) 2 3 10 10 4 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TC 125 10 SINGLE PULSE o RθJA = 111 C / W 1 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 4 10 Figure 4. Peak Current Capability FDN5632N_F085 Rev. A (W) 4 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 12 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 100us 1 1ms 10ms 0.1 100ms 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.001 0.01 SINGLE PULSE TJ = MAX RATED 1s DC 9 VDD = 5V 6 TJ = 25oC TJ = -55oC 3 TJ = 150oC o TA = 25 C 0 0 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 6. Transfer Characteristics Figure 5. Forward Bias Safe Operating Area 200 12 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 10V ID, DRAIN CURRENT (A) VGS = 6V VGS = 5V 9 VGS = 4.5V VGS = 4V 6 VGS = 3.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3 ID = 1.7A 150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 100 TJ = 150oC 50 TJ = 25oC VGS = 3V 0 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 4 2.0 8 10 1.4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 6 Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Saturation Characteristics 1.8 4 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.7A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 160 Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature FDN5632N_F085 Rev. A (W) 1.2 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature 5 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1000 1.15 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 1.10 1.05 1.00 Ciss Coss 100 0.95 f = 1MHz VGS = 0V 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10 0.1 160 VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 12. Capacitance vs Drain to Source Voltage 10 ID = 1.7A 8 VDD = 20V 6 VDD = 30V 4 VDD = 40V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Figure 13. Gate Charge vs Gate to Source Voltage FDN5632N_F085 Rev. A (W) 6 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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