Vishay MBR20H150CT Dual common-cathode high-voltage schottky rectifier Datasheet

MBR20H150CT, MBRF20H150CT, SB20H150CT-1
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Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
ITO-220AB
TO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
1
2
3
1
MBR20H150CT
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
MBRF20H150CT
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection applications.
MECHANICAL DATA
1
2
Case: TO-220AB, ITO-220AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
3
SB20H150CT-1
PIN 1
PIN 2
PIN 3
CASE
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV)
Mounting Torque: 10 in-lbs maximum
2 x 10 A
VRRM
150 V
IFSM
200 A
VF
0.75 V
TJ max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IF(AV)
20
10
A
IFSM
200
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Revision: 09-Aug-11
A
EAS
11.25
mJ
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Document Number: 88864
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
SYMBOL
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 25 °C
IF = 20 A
VALUE
0.75
VF (1)
V
0.99
TC = 125 °C
0.86
TJ = 25 °C
Maximum reverse current per diode at
working peak reverse voltage
UNIT
0.90
IR (1)
TJ = 125 °C
5.0
μA
1.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
2.2
4.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
TO-220AB
MBR20H150CT-E3/45
2.06
45
50/tube
ITO-220AB
MBRF20H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB20H150CT-1E3/45
1.58
45
50/tube
Tube
Note
(1) AEC-Q101
qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
260
30
Peak Forward Surge Current (A)
Average Forward Current (A)
240
25
MBR, MBRB
20
MBRF
15
10
5
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
220
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 09-Aug-11
Document Number: 88864
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
1000
100
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 000
TJ = 175 °C
100
TJ = 125 °C
10
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
10
MBRF
MBR, MBRB
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 09-Aug-11
Document Number: 88864
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.343 (8.70)
TYP.
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
1
0.634 (16.10)
0.618 (15.70)
PIN
2 3
0.118 (3.00)
TYP.
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.024 (0.60)
0.018 (0.45)
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
DIA.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.630 (16.00)
0.614 (15.60)
1
PIN
2 3
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.264 (6.70)
0.248 (6.50)
0.270 (6.88)
0.255 (6.48)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) TYP.
Revision: 09-Aug-11
0.058 (1.47)
MAX.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
Document Number: 88864
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
1
PIN
2 3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
Revision: 09-Aug-11
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
Document Number: 88864
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
Revision: 11-Mar-11
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