BCD AP2210 300ma rf uldo regulator Datasheet

Data Sheet
300mA RF ULDO REGULATOR
AP2210
General Description
Features
The AP2210 is a 300mA ULDO regulator which provides very low noise, ultra low dropout voltage
(typically 250mV at 300mA), very low standby current
(1µA maximum) and excellent power supply ripple
rejection (PSRR 75dB at 100Hz) in battery powered
applications, such as handsets, PDAs and in noise sensitive applications, such as RF electronics.
·
·
·
·
Up to 300mA Output Current
Excellent ESR Stability
Low Standby Current
Low Dropout Voltage: VDROP=250mV at 300mA
·
·
High Output Accuracy: ±1%
Good Ripple Rejection Ability: 75dB at 100Hz
and IOUT=100µA
·
·
·
·
·
·
Tight Load and Line Regulation
Low Temperature Coefficient
Over Current Protection
Thermal Protection
Reverse-battery Protection
Logic-controlled Enable
The AP2210 also features individual logic compatible
enable/shutdown control inputs, a low power shutdown
mode for extended battery life, over current protection,
over temperature protection, as well as reversed-battery protection.
The AP2210 has 2.5V, 2.8V, 3.0V and 3.3V versions.
Applications
The AP2210 is available in space saving SOT-23-3 and
SOT-23-5 packages.
·
·
·
·
·
·
Cellular Phones
Cordless Phones
Wireless Communicators
PDAs/Palmtops
PC Mother Board
Consumer Electronics
SOT-23-5
SOT-23-3
Figure 1. Package Types of AP2210
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Pin Configuration
N Package
K Package
(SOT-23-5)
(SOT-23-3)
VIN
VIN
1
GND
2
EN
3
5
VOUT
4
BYP
3
1
2
GND
VOUT
Figure 2. Pin Configuration of AP2210 (Top View)
Pin Description
Pin Number
Function
Pin Name
SOT-23-3
SOT-23-5
1
2
GND
Ground
2
5
VOUT
Regulated output voltage
3
1
VIN
Input voltage
3
EN
Enable input: CMOS or TTL compatible input. Logic high=enable, logic
low=shutdown
4
BYP
Bypass capacitor for low noise operation
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Functional Block Diagram
VIN
BYP
3 (1)
2 (5)
VOUT
(4)
+
EN
Bandgap
Ref.
A (B)
A for SOT-23-3
B for SOT-23-5
(3)
Current Limit
Thermal Shutdown
1 (2)
GND
Figure 3. Functional Block Diagram of AP2210
Ordering Information
AP2210
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Package
N: SOT-23-3
K: SOT-23-5
Package
SOT-23-3
Temperature
Range
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
Part Number
Tin Lead
-40 to 125oC
AP2210K-2.5TR
SOT-23-5
-40 to 125oC
Marking ID
Lead Free
Tin Lead
Lead Free
Packing
Type
AP2210N-2.5TRE1
EH2
Tape & Reel
AP2210N-2.8TRE1
EH3
Tape & Reel
AP2210N-3.0TRE1
EH4
Tape & Reel
AP2210N-3.3TRE1
EH5
Tape & Reel
E5C
Tape & Reel
E5F
Tape & Reel
AP2210K-2.5TRE1
K5C
AP2210K-2.8TRE1
AP2210K-3.0TR
AP2210K-3.0TRE1
K5H
E5H
Tape & Reel
AP2210K-3.3TR
AP2210K-3.3TRE1
K5K
E5K
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Absolute Maximum Ratings (Note 1)
Symbol
Value
Unit
Supply Input Voltage
VIN
15
V
Enable Input Voltage
VEN
15
V
PD
Internally Limited (Thermal Protection)
W
TLEAD
260
o
Junction Temperature
TJ
150
oC
Storage Temperature
TSTG
-65 to 150
oC
ESD (Machine Model)
ESD
300
V
Thermal Resistance (No Heatsink)
θJA
Parameter
Power Dissipation
Lead Temperature (Soldering, 10sec)
C
SOT-23-3
200
SOT-23-5
200
oC/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Input Voltage
VIN
2.5
13.2
V
Enable Input Voltage
VEN
0
13.2
V
TJ
-40
125
oC
Operating Junction Temperature
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics
AP2210-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Output Voltage Accuracy
Output Voltage
Temperature Coefficient
(Note 3)
Line Regulation
Symbol
∆VOUT/VOUT
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
%
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
48
ppm/oC
VRLINE
1.5
VIN=3.5V to 13.2V
4.5
12
Load Regulation
(Note 4)
Unit
VRLOAD
IOUT=0.1mA to 300mA
1
6
30
15
IOUT=100µA
mV
mV
50
70
110
IOUT=50mA
150
230
Dropout Voltage (Note 5)
VDROP
140
IOUT=100mA
250
mV
300
165
IOUT=150mA
275
350
250
IOUT=300mA
400
500
Standby Current
ISTD
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
VEN≥2.0V, IOUT=100µA
1
100
150
180
VEN≥2.0V, IOUT=50mA
Ground Pin Current
(Note 6)
µA
5
350
µA
600
800
IGND
VEN≥2.0V, IOUT=150mA
1.3
1.9
2.5
VEN≥2.0V, IOUT=300mA
4
mA
10
15
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
450
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Mar. 2007 Rev. 1. 2
dB
900
mA
nV / Hz
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Enable Input Logic-low Voltage
Symbol
VIL
Conditions
Min
Typ
Max
0.4
Regulator shutdown
Unit
V
0.18
Enable Input Logic-high Voltage
VIH
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Regulator enabled
VIL≤0.4V
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
VIL≥2.0V
1
µA
2
5
20
µA
25
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Output Voltage Accuracy
Output Voltage
Temperature Coefficient
(Note 3)
Line Regulation
Symbol
∆VOUT/VOUT
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
%
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
42.8
ppm/oC
VRLINE
1.5
VIN=3.8V to 13.2V
4.5
12
Load Regulation
(Note 4)
Unit
VRLOAD
IOUT=0.1mA to 300mA
1
6
30
15
IOUT=100µA
mV
mV
50
70
110
IOUT=50mA
150
230
Dropout Voltage (Note 5)
VDROP
140
IOUT=100mA
250
mV
300
165
IOUT=150mA
275
350
250
IOUT=300mA
400
500
Standby Current
ISTD
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
VEN≥2.0V, IOUT=100µA
1
100
150
180
VEN≥2.0V, IOUT=50mA
Ground Pin Current
(Note 6)
µA
5
350
µA
600
800
IGND
VEN≥2.0V, IOUT=150mA
1.3
1.9
2.5
VEN≥2.0V, IOUT=300mA
4
mA
10
15
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
450
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Mar. 2007 Rev. 1. 2
dB
900
mA
nV / Hz
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Enable Input Logic-low Voltage
Symbol
VIL
Conditions
Min
Typ
Max
0.4
Regulator shutdown
Unit
V
0.18
Enable Input Logic-high Voltage
VIH
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Regulator enabled
VIL≤0.4V
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
VIL≥2.0V
1
µA
2
5
20
µA
25
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
8
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-3.0 Electrical Characteristics
VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Output Voltage Accuracy
Output Voltage
Temperature Coefficient
(Note 3)
Line Regulation
Symbol
∆VOUT/VOUT
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
%
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
40
ppm/oC
VRLINE
1.5
VIN=4V to 13.2V
4.5
12
Load Regulation
(Note 4)
Unit
VRLOAD
IOUT=0.1mA to 300mA
1
6
30
15
IOUT=100µA
mV
mV
50
70
110
IOUT=50mA
150
230
Dropout Voltage (Note 5)
VDROP
140
IOUT=100mA
250
mV
300
165
IOUT=150mA
275
350
250
IOUT=300mA
400
500
Standby Current
ISTD
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
VEN≥2.0V, IOUT=100µA
1
100
150
180
VEN≥2.0V, IOUT=50mA
Ground Pin Current
(Note 6)
µA
5
350
µA
600
800
IGND
VEN≥2.0V, IOUT=150mA
1.3
1.9
2.5
VEN≥2.0V, IOUT=300mA
4
mA
10
15
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
450
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Mar. 2007 Rev. 1. 2
dB
900
mA
nV / Hz
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-3.0 Electrical Characteristics
VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Enable Input Logic-low Voltage
Symbol
VIL
Conditions
Min
Typ
Max
0.4
Regulator shutdown
Unit
V
0.18
Enable Input Logic-high Voltage
VIH
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Regulator enabled
VIL≤0.4V
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
VIL≥2.0V
1
µA
2
5
20
µA
25
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Output Voltage Accuracy
Output Voltage
Temperature Coefficient
(Note 3)
Line Regulation
Symbol
∆VOUT/VOUT
Conditions
Min
Variation from specified
VOUT
Typ
Max
-1
1
-2
2
%
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
36.3
ppm/oC
VRLINE
1.5
VIN=4.3V to 13.2V
4.5
12
Load Regulation
(Note 4)
Unit
VRLOAD
IOUT=0.1mA to 300mA
1
6
30
15
IOUT=100µA
mV
mV
50
70
110
IOUT=50mA
150
230
Dropout Voltage (Note 5)
VDROP
140
IOUT=100mA
250
mV
300
165
IOUT=150mA
275
350
250
IOUT=300mA
400
500
Standby Current
ISTD
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
VEN≥2.0V, IOUT=100µA
1
100
150
180
VEN≥2.0V, IOUT=50mA
Ground Pin Current
(Note 6)
µA
5
350
µA
600
800
IGND
VEN≥2.0V, IOUT=150mA
1.3
1.9
2.5
VEN≥2.0V, IOUT=300mA
4
mA
10
15
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
450
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Mar. 2007 Rev. 1. 2
dB
900
mA
nV / Hz
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Electrical Characteristics (Continued)
AP2210-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Enable Input Logic-low Voltage
Symbol
VIL
Conditions
Min
Typ
Max
0.4
Regulator shutdown
Unit
V
0.18
Enable Input Logic-high Voltage
VIH
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Regulator enabled
VIL≤0.4V
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
VIL≥2.0V
1
µA
2
5
20
µA
25
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Performance Characteristics
550
3.0100
AP2210-3.0
VIN=4V, IOUT=10mA
3.0075
CIN=1.0µF, COUT=2.2µF
Output Voltage (V)
3.0125
Dropout Voltage (mv)
3.0150
3.0050
3.0025
3.0000
2.9975
2.9950
IOUT=50mA
450
IOUT=100mA
IOUT=150mA
400
IOUT=300mA
350
300
250
200
150
2.9925
2.9900
100
2.9875
50
2.9850
-50
0
-25
0
25
50
75
100
-60
125
-40
-20
o
0
20
40
60
80
100
120
140
o
Junction Temperature ( C)
Junction Temperature ( C)
Figure 4. Output Voltage vs. Junction Temperature
Figure 5. Dropout Voltage vs. Junction Temperature
5.0
5.0
AP2210-3.0
VIN=4V,CIN=1.0µF,COUT=2.2µF
4.5
4.5
o
TA=25 C
4.0
Ground Pin Current (mA)
CIN=1.0µF, COUT=2.2µF
4.0
Ground Pin Current (mA)
CIN=1.0µF, COUT=2.2µF
500
3.5
3.0
2.5
2.0
1.5
3.5
3.0
IOUT=100mA
2.0
IOUT=150mA
1.0
0.5
0.5
0
50
100
150
200
250
IOUT=300mA
1.5
1.0
0.0
IOUT=50mA
2.5
0.0
300
-60
-40
-20
0
20
40
60
80
100
120
140
o
Output Current (mA)
Junction Temperature ( C)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Performance Characteristics (Continued)
2.0
20
Enable Current (µA)
16
VEN=2.0V
COUT=2.2µF, IOUT=100µA
VEN=3.0V
Enable Voltage (V)
18
VEN=1.8V
AP2210-3.0
VIN=4V, CIN=1.0µF
VEN=3.7V
14
12
10
8
1.8
AP2210-3.0
CIN=1.0µF, COUT=2.2µF
1.6
VIN=4V, IOUT=100µA
1.4
1.2
VEN=logic high
VEN=logic low
1.0
6
0.8
4
0.6
2
0
-50
-25
0
25
50
75
100
0.4
-50
125
-25
0
25
50
75
100
125
o
o
Junction Temperature ( C)
Junction Temperature ( C)
Figure 8. Enable Current vs. Junction Temperature
Figure 9. Enable Voltage vs. Junction Temperature
10
200
IOUT=10mA
CIN=1.0µF, COUT=2.2µF
Output Noise ( µV/ Hz )
Noise (µVrms)
1
Noise Measurement Filter: DIN Noise
150
100
0.1
0.01
AP2210-3.0
VIN=4.5V, IOUT=10mA
50
0.001
CIN=1.0µF, COUT=2.2µF
CBYP=100pF
0.0001
0
10
100
1000
10000
10
Bypass Capacitor (pF)
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 11. Output Noise vs. Frequency
Figure 10. Noise vs. Bypass Capacitor
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
14
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Performance Characteristics (Continued)
5.5
AP2210-3.0
200
4.5
4
∆VOUT (50mV/Div)
0
50
0
-50
AP2210-3.0
5
VIN (0.5V/Div)
400
∆VOUT (50mV/Div)
IOUT (200mA/Div)
600
50
0
-50
-100
-100
Time (20µs/Div)
Time (20µs/Div)
Figure 13. Line Transient
(Conditions: VIN=4 to 5V, VEN=2V, IOUT=1mA,
COUT=2.2µF)
Figure 12. Load Transient
(Conditions: VIN=4V, VEN=2V, IOUT=10mA to 300mA,
CIN=1.0µF, COUT=2.2µF)
100
VOUT (2V/Div)
AP2210-3.0
VIN=4V, VRIPPLE=1VPP
90
4
AP2210-3.0
80
2
IOUT=10mA, COUT=2.2µF
70
PSRR (dB)
VEN (2V/Div)
6
0
60
50
40
2
30
0
20
10
-2
0
10
-4
100
1k
10k
100k
1M
Frequency (Hz)
Time (40µs/Div)
Figure 15. PSRR vs. Frequency
Figure 14. VEN vs. VOUT
(Conditions: VEN=0 to 2V, VIN=4V, IOUT=30mA,
CIN=1.0µF, COUT=2.2µF)
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
15
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Performance Characteristics (Continued)
0.9
0.9
AP2210-3.0
SOT-23-3 Package
No Heatsink
0.8
0.6
0.5
0.4
0.3
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0.1
0.1
0.0
25
50
75
100
125
AP2210-3.0
SOT-23-5 Package
No Heatsink
0.8
Power Dissipation (W)
Power Dissipation (W)
0.7
0.0
25
150
50
75
100
125
150
o
Ambient Temperature ( C)
o
Ambient Temperature ( C)
Figure 17. Power Dissipation vs. Ambient Temperature
Figure 16. Power Dissipation vs. Ambient Temperature
1000
1000
COUT=1µF
10
Stable Area
1
No Bypass Capacitor
100
ESR (Ω)
ESR (Ω)
COUT=2.2µF
No Bypass Capacitor
100
10
Stable Area
1
0.1
0.1
0.01
0.01
50
100
150
200
250
50
300
Output Current (mA)
100
150
200
250
300
Output Current (mA)
Figure 18. ESR vs. Output Current
Figure 19. ESR vs. Output Current
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
16
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Performance Characteristics (Continued)
1000
COUT=4.7µF
No Bypass Capacitor
100
ESR (Ω)
10
Stable Area
1
0.1
0.01
50
100
150
200
250
300
Output Current (mA)
Figure 20. ESR vs. Output Current
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
17
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Typical Application
AP2210-3.0
VIN=4.0V
VIN
VIN
CIN
VIN=4.0V
VOUT
COUT
GND
1.0 µF
VIN
VOUT=3.0V
VOUT
2.2 µF
AP2210-3.0
VIN
VOUT=3.0V
VOUT
VOUT
GND
COUT
CIN
1.0 µF
EN
2.2 µF
BYP
C BYP
100pF
Figure 21. Typical Application of AP2210 (Note 7)
Note 7: Dropout voltage is 250mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.25V is the minimum
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage
is VOUT+1V to 13.2V. For AP2210-3.0 version, its input voltage can be set from 4V(VOUT+1V) to 13.2V.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
18
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Application Information
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
TJ = PD*θJA + TA
PD=(VIN-VOUT)*IOUT+VIN*IGND
Input Capacitor
A 1µF minimum capacitor is recommended to be
placed between VIN and GND.
Output Capacitor
It is required to prevent oscillation. 1.0µF minimum
is recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient
response.
Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be
ignored due to its small value.
TJ(max) is 150oC, θJA is 200oC/W, no heatsink is
required since the package alone will dissipate
enough heat to satisfy these requirements unless the
calculated value for power dissipation exceeds the
limit.
Noise Bypass Capacitor
Bypass capacitor is connected to the internal voltage
reference. A 100pF capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed.
Example (3.0V version):
IOUT=300mA, TA=50oC, VIN(Max) is:
The start-up speed of the AP2210 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
CBYP and leave BYP open.
(150oC-50oC)/(0.3A*200oC/W)+3.0V=4.67V
Therefore, for good performance, please make sure
that input voltage is less than 4.67V without heatsink
when TA=50oC.
Power Dissipation
Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
19
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Mechanical Dimensions
SOT-23-3
Mar. 2007 Rev. 1. 2
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
20
Data Sheet
300mA RF ULDO REGULATOR
AP2210
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
1.250(0.049)
1.050(0.041)
0.950(0.037)
TYP
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
21
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