DSK GL41B Surface mount rectifier Datasheet

Diode Semiconductor Korea
SURFACE MOUNT
RECTIFIERS
GL41A---GL41Y
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
◇ Plastic package has underwriters laboratories
DO - 213AB
flammability classification 94V-0
◇ Glass passivated chip junction
◇ For surface mount applications
SOLDERABLE ENDS
◇ High temperature metallurgically bonded construction
0
D2=D1 +
-0.20
◇ Cavity-free glass passivated junction
D1 2.6± 0.15
◇ High temperature soldering guaranteed:450 ℃/5
seconds at terminals.Complete device sub-mersible
temperature of 265℃ for 10 seconds in solder bath
D2
MECHANICAL DATA
0.5± 0.1
0.5± 0.1
◇ Case: JEDEC DO-213AB,molded plastic
4.9± 0.2
◇ Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
◇ Polarity: Color band denotes cathode
Dimensions in millimeters
◇ Weight: 0.0046 ounces, 0.116 grams
◇ Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
GL GL GL GL GL GL GL GL GL
UNITS
41A 41B 41D 41G 41J 41K 41M 41T 41Y
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see FIG.1)
VRRM
VRMS
VDC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800 1000 1300 1600
560 700 910 1120
800 1000 1300 1600
V
V
V
I(AV)
1.0
A
IFSM
30
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage
@1.0A
Maximum reverse current
@T A=25℃
at rated DC blocking voltage @T A=125℃
Typical junction capacitance (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
VF
IR
Cj
RθJA
Tj
TSTG
1.2
1.1
10
50
8.0
75
- 55 ---- +175
- 55 ---- +175
V
µA
pF
℃/W
℃
℃
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal.
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Diode Semiconductor Korea
GL41A- - -GL41Y
FIG.1 -- FORWARD DERATING CURVE
FIG.2 PEAK FORWARD SURGE CURRENT
50
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0
25
50
75
100
125
150
175
200
PEAK FORWARD SURGE
CURRENT,AMPERES
AVERAGE FORWARD
CURRENT,AMPERES
1.2
40
30
TJ=TJmax
8.3ms Single Half
Sine-Wave
20
10
0
10
1
AMBIENT TEMPERATURE
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE
CURRENT MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
Y
GL41A--GL41J
100
GL41K--GL41Y
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
100
O
TJ=125 C
10
O
TJ=75 C
1
TJ=25OC
0.1
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
60
f=1MHz
TJ=25
40
20
10
4
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE,VOLTS
40
100
TRANSIENT THERMAL
IMPEDANCE, /W
JUNCTION CAPACITANCE pF
100
10
1
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
0.01
0.1
1
10
100
PULSE DURATION,SEC
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