S6370 TOSHIBA THYRISTOR SILICON PLANAR TYPE S6370 Unit in mm LOW POWER SWITCHING APPLICATIONS (STROBE TRIGGER) l Repetitive Peak Off-State Voltage : VDRM = 400V l Repetitive Peak Reverse Voltage : VRRM = 400V l Fast Turn On Time : tgt = 1.5µs l Plastic Mold Package (TO−92) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage (RGK=1kW) VDRM VRRM 400 V Non−Repetitive Peak Reverse Voltage (Non−rep<5ms, RGK=1kΩ, Tj=0~125°C) VRSM 450 V IT (AV) 300 mA IT (RMS) 450 mW Average On−State Current (Half Sine Waveform Ta=45°C) R.M.S. On−State Current 9 (50Hz) ITSM Peak Gate Power Dissipation PGM 0.1 W Average Gate Power Dissipation A PG (AV) 0.01 W Peak Reverse Gate Voltage VRGM −5 V Peak Forward Gate Current IGM 125 mA Tj −40~125 °C Tstg −40~125 °C Junction Temperature Storage Temperature Range TO−92 SC−43 13−5A1A Weight : 0.2 g Peak One Cycle Surge On-State Current (Non-Repetitive) 9.9 (60Hz) JEDEC EIAJ TOSHIBA Note : Use with gate resistance by all means 000707EAA2 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 2000-12-01 1/5 S6370 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = 400V RGK = 1kW ― ― 10 mA Peak On−State Voltage VTM ITM = 2A ― ― 2.0 V Gate Trigger Voltage VGT ― ― 0.8 V Gate Trigger Current IGT ― ― 200 mA Turn On Time tgt VD = 400V, iG = 5mA ― ― 1.5 ms VGD VD = 6V, RGK = 1kΩ 0.2 ― ― V RL = 100Ω, RGK = 1kΩ ― 4 ― mA Junction to Ambient ― ― 250 °C / W Gate Non−Trigger Voltage Holding Current IH Thermal Resistance Rth (j−a) VD = 6V, RL = 100W, RGK = 1kΩ MARKING NUMBER *1 *2 SYMBOL TYPE MARK S6370 S6370 Example 8A : January 1998 8B : February 1998 8L : December 1998 000707EAA2 · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2000-12-01 2/5 S6370 2000-12-01 3/5 S6370 2000-12-01 4/5 S6370 2000-12-01 5/5