IXYS IXFR10N100Q N-channel enhancement mode avalanche rated, high dv/dt low gate charge and capacitance Datasheet

Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFR 12N100Q
ISOPLUS247TM Q CLASS
VDSS
ID25
1000 V 10 A
IXFR 10N100Q 1000 V
9A
(Electrically Isolated Back Surface)
trr £ 200 ns
RDS(on)
1.05 W
1.20 W
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
T J = 25°C to 150°C
T J = 25°C to 150°C; RGS = 1 MW
VGS
VGSM
Continuous
Transient
ID25
TC = 25°C
IDM
TC = 25°C, Pulse width limited by TJM
IAR
TC = 25°C
EAR
TC = 25°C
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T J £ 150°C, RG = 2 W
PD
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
V
V
±20
±30
V
V
10
9
48
40
12
10
A
A
A
A
A
A
30
mJ
5
V/ns
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
V~
5
g
12N100
10N100
12N100
10N100
12N100
10N100
TJ
TJM
Tstg
TL
1000
1000
t = 1 min
Weight
ISOPLUS 247TM
G
D
G = Gate
S = Source
Isolated back surface*
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 4mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
12N100
10N100
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
5.5
V
±100
nA
50
1
mA
mA
1.05
1.2
W
W
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
98589 (1/99)
1-2
IXFR 10N100Q
IXFR 12N100Q
Symbol
Test Conditions
gfs
VDS = 15 V; ID = IT
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
4
10
S
2900
pF
315
pF
50
pF
20
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
23
ns
td(off)
RG = 1 W (External),
40
ns
tf
15
ns
Qg(on)
90
nC
30
nC
40
nC
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.50
RthCK
0.15
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive; pulse width limited by TJM
48
A
VSD
IF = IS, VGS = 0 V, Note 1
1.3
V
t rr
QRM
IF = Is, -di/dt = 100 A/ms, VR = 100 V
IRM
200
ns
1.6
mC
7
A
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
Millimeter
Min. Max.
A
4.83
5.21
A1
2.29
2.54
A2
1.91
2.16
b
1.14
1.40
1.91
2.13
b1
b2
2.92
3.12
C
0.61
0.80
D 20.80 21.34
E
15.75 16.13
e
5.45 BSC
L
19.81 20.32
L1
3.81
4.32
Q
5.59
6.20
R
4.32
4.83
S
13.21 13.72
T
15.75 16.26
U
1.65
3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXFR10N100
IT = 5A
2. IT test current:
IXFR12N100
IT = 6A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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