ON MC74HCT125A Quad 3-state noninverting buffer with lsttl compatible input Datasheet

MC74HCT125A
Quad 3-State Noninverting
Buffer with LSTTL
Compatible Inputs
High−Performance Silicon−Gate CMOS
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The MC74HCT125A is identical in pinout to the LS125. The device
inputs are compatible with standard CMOS and LSTTL outputs.
The MC74HCT125A noninverting buffer is designed to be used
with 3−state memory address drivers, clock drivers, and other
bus−oriented systems. The devices have four separate output enables
that are active−low.
14
PDIP−14
MC74HCT125AN
N SUFFIX
AWLYYWWG
CASE 646
14
Features
•
•
•
•
•
•
•
•
MARKING
DIAGRAMS
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the JEDEC Standard No. 7A Requirements
Chip Complexity: 72 FETs or 18 Equivalent Gates
These are Pb−Free Devices
1
1
14
SOIC−14
D SUFFIX
CASE 751A
14
1
HCT125AG
AWLYWW
1
14
PIN ASSIGNMENT
OE1
1
14
VCC
A1
2
13
OE4
Y1
3
12
A4
OE2
4
11
Y4
A2
5
10
Y2
6
9
A3
GND
7
8
Y3
LOGIC DIAGRAM
Active−Low Output Enables
A1
OE1
A2
OE2
A3
FUNCTION TABLE
Inputs
OE3
Output
A
OE
Y
H
L
X
L
L
H
H
L
Z
1
1
OE3
HCT125A
14
TSSOP−14
DT SUFFIX
CASE 948G
A4
OE4
2
3
Y1
14
1
5
HCT
125A
ALYWG
G
6
Y2
14
1
4
SOEIAJ−14
F SUFFIX
CASE 965
74HCT125A
ALYWG
1
9
8
Y3
10
12
11
13
PIN 14 = VCC
PIN 7 = GND
Y4
A
=
Assembly Location
L, WL
=
Wafer Lot
Y, YY
=
Year
W, WW =
Work Week
G
= Pb−Free Package
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 1
1
Publication Order Number:
MC74HCT125A/D
MC74HCT125A
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
Plastic DIP†
SOIC Package†
TSSOP Package†
_C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage
(Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
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2
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC74HCT125A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input Voltage
Vout = VCC – 0.1 V
|Iout| v 20 mA
4.5 to
5.5
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input Voltage
Vout = 0.1 V
|Iout| v 20 mA
4.5 to
5.5
0.8
0.8
0.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
4.5
3.98
3.84
3.7
VOL
Maximum Low−Level Output
Voltage
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH
|Iout| v 6.0 mA
Vin = VIL
|Iout| v 20 mA
Vin = VIL
|Iout| v 6.0 mA
V
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
mA
IOZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.5
± 5.0
± 10
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns, VCC = 5.0 V ± 10%)
Guaranteed Limit
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
5.0
18
23
27
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
5.0
24
30
36
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
5.0
18
23
27
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
5.0
12
15
18
ns
Symbol
Parameter
Cin
Maximum Input Capacitance
−
10
10
10
pF
Cout
Maximum 3−State Output Capacitance (Output in High−Impedance State)
−
15
15
15
pF
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
* Used to determine the no−load dynamic power consumption: P D = CPD VCC 2 f + ICC VCC .
30
pF
ORDERING INFORMATION
Package
Shipping†
MC74HCT125ANG
PDIP−14
(Pb−Free)
25 Units / Rail
MC74HCT125ADG
SOIC−14
(Pb−Free)
Device
MC74HCT125ADR2G
55 Units / Rail
2500 / Tape & Reel
MC74HCT125ADTG
TSSOP−14*
96 Units / Rail
MC74HCT125ADTR2G
TSSOP−14*
2500 / Tape & Reel
MC74HCT125AFG
SOEIAJ−14
(Pb−Free)
50 Units / Rail
MC74HCT125AFELG
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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3
MC74HCT125A
SWITCHING WAVEFORMS
VM
GND
VCC
90%
VM
10%
INPUT A (VI)
VCC
OE (VI)
tf
tr
GND
tPHL
tPLH
tPZH
tTHL
tTLH
VI = GND to 3.0 V
VM = 1.3 V
VM
OUTPUT Y
90%
VM
10%
OUTPUT Y
10%
VOL
90%
VOH
tPHZ
VM
OUTPUT Y
Figure 1.
HIGH
IMPEDANCE
Figure 2.
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
HIGH
IMPEDANCE
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
OUTPUT
1 kW
CL *
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ and tPZH.
*Includes all probe and jig capacitance
Figure 3. Test Circuit
Figure 4. Test Circuit
VCC
OE
A
Y
(1/4 OF THE DEVICE)
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4
MC74HCT125A
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE P
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
8
B
1
7
A
F
L
N
C
−T−
SEATING
PLANE
H
G
D 14 PL
J
K
0.13 (0.005)
M
M
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5
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10 _
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10 _
0.38
1.01
MC74HCT125A
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
7
1
G
−T−
D 14 PL
0.25 (0.010)
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
J
M
K
M
F
R X 45 _
C
SEATING
PLANE
B
M
S
SOLDERING FOOTPRINT*
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0_
7_
0.228 0.244
0.010 0.019
MC74HCT125A
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G−01
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
MC74HCT125A
PACKAGE DIMENSIONS
SOEIAJ−14
CASE 965−01
ISSUE B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
8
Q1
E HE
M_
L
7
1
DETAIL P
Z
D
VIEW P
A
e
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
--2.05
0.05
0.20
0.35
0.50
0.10
0.20
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
--1.42
INCHES
MIN
MAX
--0.081
0.002
0.008
0.014
0.020
0.004
0.008
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
--0.056
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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8
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MC74HCT125A/D
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