MP4504 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4504 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Package with heat sink isolated to lead (SIP 12 pin) · High collector power dissipation (4 devices operation) · High collector current: IC (DC) = −5 A (max) · High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A) Unit: mm : PT = 5 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −6 V DC IC −5 Pulse ICP −8 IB PC Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation Ta = 25°C (4 devices operation) Tc = 25°C JEDEC ― A JEITA ― −0.5 A TOSHIBA 3.0 W 2-32B1B Weight: 6.0 g (typ.) 5.0 W PT 25 Isolation voltage Junction temperature Storage temperature range VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration R1 R2 3 1 6 5 2 7 12 8 4 10 11 9 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2002-11-20 MP4504 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Thermal resistance of junction to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −10 µA Collector cut-off current ICEO VCE = −100 V, IB = 0 A ― ― −10 µA Emitter cut-off current IEBO VEB = −6 V, IC = 0 A −0.6 ― −2.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −100 ― ― V hFE (1) VCE = −5 V, IC = −3 A 2000 ― 15000 hFE (2) VCE = −5 V, IC = −5 A 1000 ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 40 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF ― 0.3 ― ― 2.0 ― ― 0.4 ― Transition frequency Collector output capacitance Cob ton IB1 Turn-on time fT Switching time Storage time tstg Input 20 µs Output IB2 10 Ω Saturation voltage IB2 DC current gain IB1 ― V µs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 3 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― µs ― 8 ― µC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = 3 V, dIF/dt = −50 A/µs 2 2002-11-20 MP4504 IC – VCE IC – VBE −8 −8 −10 −3 (A) IC −4 −0.7 −0.5 Collector current Collector current VCE = −5 V Tc = 25°C −1.0 IC (A) −6 Common emitter Common emitter −1.5 −0.3 −2 IB = −0.2 mA −6 −4 −2 Tc = 100°C −55 25 0 0 0 −2 −4 −6 Collector-emitter voltage −8 VCE 0 0 −10 −0.8 (V) −1.6 −2.4 −3.2 Base-emitter voltage VBE hFE – IC −4.0 (V) VCE – IB 30000 Common emitter −2.8 (V) 5000 3000 Tc = 100°C 25 −55 1000 500 200 −0.05 −0.1 Common emitter −0.3 −1 Collector current −3 IC −10 Tc = 25°C VCE 10000 −2.4 Collector-emitter voltage DC current gain hFE VCE = −5 V −2.0 −20 IC = −8 A −7 −6 −1.6 −5 −4 −3 −2 −1 −0.5 −0.1 −1.2 −0.8 −0.4 −0.1 (A) −1 −10 Base current VCE (sat) – IC −1000 (mA) VBE (sat) – IC −10 −10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −100 IB IC/IB = 500 −5 −3 Tc = −55°C −1 25 −0.5 100 −0.3 −0.1 −0.3 −1 Collector current −3 IC Common emitter −3 Tc = −55°C 25 −1 (A) 100 −0.5 −0.3 −0.1 −10 IC/IB = 500 −5 −0.3 −1 Collector current 3 −3 IC −10 (A) 2002-11-20 MP4504 rth – tw 100 Transient thermal resistance rth (°C/W) 300 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (4) 30 (3) (2) 10 (1) 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation 1 (3) 3 devices operation Circuit board (4) 4 devices operation 0.3 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) PT – Ta Safe Operating Area −20 8 −10 −3 100 µs PT 1 ms −5 Total power dissipation 10 ms (A) −1 −0.5 −0.3 6 (4) (3) 4 (2) Circuit board (1) 2 −0.1 0 0 −0.05 Curves must be derated linearly with increase in temperature. −0.01 −0.5 −1 −3 −10 40 80 120 160 200 Ambient temperature Ta (°C) VCEO max −30 Collector-emitter voltage VCE −100 −300 (V) ∆Tj – PT 160 (°C) −0.03 *: Single nonrepetitive pulse Tc = 25°C Junction temperature increase ∆Tj IC Collector current (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) IC max (pulsed)* (1) (2) (3) (4) 120 Attached on a circuit board 80 Circuit board (1) 1 device operation 40 (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 0 0 2 4 6 Total power dissipation 4 8 PT 10 (W) 2002-11-20 MP4504 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-11-20 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.