Fairchild FQU2N60CTU Low gate charge (typ. 8.5 nc) Datasheet

FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
Description
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
!
G
G
S
D
●
◀
S
G!
I-PAK
D-PAK
▲
●
●
!
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
IDM
Drain Current
FQD2N60C / FQU2N60C
Unit
600
V
- Continuous (TC = 25°C)
1.9
A
- Continuous (TC = 100°C)
1.14
A
- Pulsed
(Note 1)
7.6
A
± 30
V
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.9
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25°C)*
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
44
W
0.35
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
FQD2N60C / FQU2N60C
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
RθJA
RθJA
Unit
2.87
°C/W
Thermal Resistance, Junction-to-Ambient*
50
°C/W
Thermal Resistance, Junction-to-Ambient, Max.
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
1
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
FQD2N60C
FQD2N60C
D-PAK
-
-
FDU2N60C
FDU2N60C
I-PAK
-
-
Electrical Characteristics
Symbol
Quantity
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.95 A
--
3.6
4.7
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
--
5.0
--
S
--
180
235
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
20
25
pF
--
4.3
5.6
pF
--
9
28
ns
--
25
60
ns
--
24
58
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4, 5)
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
--
4.1
--
nC
--
--
1.9
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
--
--
1.4
V
trr
Reverse Recovery Time
230
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
--
Qrr
--
1.0
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
2
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
-1
10
o
150 C
o
-55 C
0
10
o
25 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-2
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
12
VGS = 10V
8
6
4
VGS = 20V
2
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
※ Note : TJ = 25℃
0
-1
10
0
1
2
3
4
5
0.2
0.4
Figure 5. Capacitance Characteristics
500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Ciss
300
Coss
200
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
150
Crss
100
1.4
VDS = 300V
8
VDS = 480V
6
4
2
50
0
-1
10
1.2
VDS = 120V
10
250
1.0
12
400
350
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
0.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Note : ID = 2A
0
10
0
1
10
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.95 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
10
1.6
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1 ms
0
10
10 ms
100 ms
DC
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
1
2
10
0.8
0.4
-2
10
1.2
0.0
25
3
10
10
50
75
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
125
150
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
D = 0 .5
10
100
TC, Case Temperature [℃]
※ N o te s :
1 . Z θ J C ( t) = 2 .8 7 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
0 .0 1
-1
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
4
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Typical Performance Characteristics (Continued)
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
6
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
7
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
9
www.fairchildsemi.com
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
Sync-Lock™
FPS™
®
AccuPower™
F-PFS™
®*
®
®
®
AX-CAP *
PowerTrench
FRFET
SM
Global Power Resource
PowerXS™
BitSiC™
TinyBoost™
Programmable Active Droop™
Green Bridge™
Build it Now™
TinyBuck™
QFET®
Green FPS™
CorePLUS™
TinyCalc™
QS™
Green FPS™ e-Series™
CorePOWER™
TinyLogic®
Quiet Series™
Gmax™
CROSSVOLT™
TINYOPTO™
RapidConfigure™
GTO™
CTL™
TinyPower™
IntelliMAX™
Current Transfer Logic™
™
TinyPWM™
®
ISOPLANAR™
DEUXPEED
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
SignalWise™
and Better™
TriFault Detect™
EfficentMax™
SmartMax™
MegaBuck™
TRUECURRENT®*
ESBC™
SMART START™
MICROCOUPLER™
μSerDes™
Solutions for Your Success™
MicroFET™
®
SPM®
MicroPak™
®
STEALTH™
MicroPak2™
Fairchild
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
®
®
VisualMax™
SupreMOS
OPTOLOGIC
FastvCore™
®
VoltagePlus™
OPTOPLANAR
SyncFET™
FETBench™
XS™
Similar pages