TSC MBR1635 Schottky barrier rectifier Datasheet

MBR1635 thru MBR16150
Taiwan Semiconductor
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AC
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.86 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
SYMBOL
PARAMETER
MBR
MBR
MBR
MBR
MBR
1635
1645
1650
1660
1690
MBR
MBR
16100 16150
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
16
A
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
32
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
IRRM
1.0
VF
0.63
0.75
0.85
0.95
0.57
0.65
0.75
0.92
0.5
0.5
0.3
0.1
15
10
7.5
5
Maximum instantaneous forward voltage (Note 2)
IF=16A, TJ=25℃
IF=16A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
IR
dV/dt
0.5
10000
A
V
mA
V/μs
O
RθJC
3
TJ
- 55 to +150
O
C
- 55 to +150
O
C
TSTG
C/W
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308053
Version: J13
MBR1635 thru MBR16150
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
PART NO.
PACKING CODE
QUALIFIED
MBR16xx
(Note 1)
Prefix "H"
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
PACKING
TO-220AC
50 / Tube
Note 1: "xx" defines voltage from 35V (MBR1635) to 150V (MBR16150)
EXAMPLE
AEC-Q101
PREFERRED P/N
PART NO.
PACKING CODE
MBR1660 C0
MBR1660
C0
MBR1660 C0G
MBR1660
C0
MBR1660HC0
MBR1660
QUALIFIED
H
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT (A)
20
16
12
8
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
4
0
0
50
100
150
PEAK FORWARD SURGE CURRENT (A)
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
350
300
8.3ms Single Half Sine Wave
JEDEC Method
250
200
150
100
50
1
10
100
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
TJ=125℃
10
Pulse Width=300μs
1% Duty Cycle
1
TJ=25℃
0.1
MBR1635-MBR1645
MBR1650-MBR1660
MBR1690-MBR16150
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1308053
1
1.1 1.2
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
10
TJ=125℃
1
TJ=25℃
0.1
0.01
MBR1635-MBR1645
MBR1650-MBR16150
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: J13
MBR1635 thru MBR16150
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
10
1000
100
1
0.1
0.1
1
10
100
0.01
0.1
REVERSE VOLTAGE (V)
1
10
100
T-PULSE DURATION. (sec)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
0.00
1.60
0.000
0.063
H
13.19
14.79
0.519
0.582
I
4.95
5.20
0.195
0.205
J
4.42
4.76
0.174
0.187
K
1.14
1.40
0.045
0.055
L
5.84
6.86
0.230
0.270
M
2.20
2.80
0.087
0.110
N
0.35
0.64
0.014
0.025
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1308053
Version: J13
MBR1635 thru MBR16150
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308053
Version: J13
Similar pages