BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SC2715 Pb Lead-free z Power dissipation. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2715 Marking Package Code RR1/RO1/RY1 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC099 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2715 Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA DC current gain hFE VCE=12V,IC=2mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1 V Transition frequency fT VCE=10V, IC= 1mA 400 MHz CLASSIFICATION Rank OF B MIN TYP 40 MAX UNIT 240 B B 100 hFE(1) R O Y Range 40-80 70-140 120-240 Marking RR1 RO1 RY1 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC099 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2715 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SC2715 SOT-23 3000/Tape&Reel Document number: BL/SSSTC099 Rev.A www.galaxycn.com 3