IRFH5250PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.15 mΩ) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5250TRPbF IRFH5250TR2PBF results in ⇒ Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 25 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 45 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 31 ID @ Tmb = 25°C Continuous Drain Current, VGS @ 10V 100 ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V 100 IDM Pulsed Drain Current PD @TA = 25°C PD @Tmb = 25°C g Power Dissipation g c 3.6 160 g TJ Operating Junction and TSTG Storage Temperature Range V A 400 Power Dissipation Linear Derating Factor h h Units 0.029 -55 to + 150 W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5250PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Min. 25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 181 ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 0.9 1.4 1.80 -6.3 ––– ––– ––– ––– ––– 110 52 13 7.8 17 15 25 36 1.3 VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS td(on) tr td(off) tf Ciss Coss Crss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– 28 46 30 19 7174 1758 828 Max. ––– ––– 1.15 1.75 2.35 ––– 5.0 150 100 -100 ––– ––– 78 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units V V/°C mΩ V mV/°C μA nA S nC nC nC Ω ns pF Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A VDS = VGS, ID = 150μA e e VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 50A VGS = 10V, VDS = 13V, ID = 50A VDS = 13V VGS = 4.5V ID = 50A VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 50A RG =1.8Ω VGS = 0V VDS = 13V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 468 50 Diode Characteristics Parameter IS Min. Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) c Typ. Max. 100 h ––– ––– ––– ––– 400 Conditions Units MOSFET symbol A D showing the integral reverse G S p-n junction diode. e VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 50A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 50A, VDD = 13V Q rr Reverse Recovery Charge ––– 68 102 nC di/dt = 200A/μs ton Forward Turn-On Time e Time is dominated by parasitic Inductance Thermal Resistance Typ. Max. RθJ-mb Junction-to-Mounting Base Parameter 0.8 RθJC (Top) Junction-to-Case f 0.5 ––– 15 RθJA Junction-to-Ambient ––– 35 ––– 21 RθJA (<10s) 2 g Junction-to-Ambient g www.irf.com © 2015 International Rectifier Submit Datasheet Feedback Units °C/W May 19, 2015 IRFH5250PbF 1000 1000 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM 100 10 2.7V 2.7V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.1 10 1 10 0.1 100 1000 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.4 1.2 1.0 0.8 0.6 1 1.5 2 2.5 3 3.5 4 4.5 5 -60 -40 -20 0 Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 12.0 VDS= 20V VDS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage www.irf.com © 2015 International Rectifier 20 40 60 80 100 120 140 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH5250PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tc = 25°C Tj = 150°C Single Pulse 0.1 1.6 0.1 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 350 VGS(th) , Gate threshold Voltage (V) 3.0 300 ID, Drain Current (A) 10msec Limited by Package DC 1 VGS = 0V 0.1 100μsec 1msec 100 Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 2.5 2.0 1.5 ID = 1.0A ID = 1.0mA ID = 500μA ID = 150μA 1.0 0.5 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature 1 Thermal Response ( ZthJC ) °C/W D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 4 2000 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5250PbF ID = 50A ID 18A 24A BOTTOM 50A 1800 TOP 1600 3 1400 1200 2 1000 T J = 125°C 1 T J = 25°C 0 2 4 6 8 10 12 14 16 18 800 600 400 200 0 20 25 VGS, Gate -to -Source Voltage (V) 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanch Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5250PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit RD VDS VGS Fig 16b. Unclamped Inductive Waveforms VDS 90% D.U.T. RG + -VDD 10% V10V GS VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) Fig 17a. Switching Time Test Circuit tr td(off) tf Fig 17b. Switching Time Waveforms Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH5250PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5250PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimens ion design to accommodate the component width Dimens ion design to accommodate the component lenght Dimension design to accommodate the component thicknes s Overall width of the carrier tape Pitch between succes sive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQF N 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5250PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at T J of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Revision History Date 12/16/2013 4/28/2015 5/19/2015 Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet with new IR corporate template • Updated package outline for “option B” and added package outline for “option G” on page 7 • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015