EIC BR604 Silicon bridge rectifier Datasheet

BR600 - BR610
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR6
Io : 6.0 Amperes
0.158 (4.00)
0.142 (3.60)
FEATURES :
*
*
*
*
*
*
0.445 (11.30)
0.405 (10.30)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
AC
0.62 (15.75)
0.58 (14.73)
0.127 (3.20)
0.047 (1.20)
AC
0.042 (1.06)
0.038 (0.96)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.6 grams
0.75 (19.1)
Min.
0.27 (6.9)
0.23 (5.8)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR600
BR601
BR602
BR604
BR606
BR608
BR610
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc=50°C
IF(AV)
6.0
Amps.
IFSM
200
Amps.
Current Squared Time at t < 8.3 ms.
I2t
64
A2S
Maximum Forward Voltage per Diode at IF =3 A.
VF
1.0
Volts
Peak Forward Surge Current,
Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
RθJC
8.0
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
UPDATE : APRIL 23, 1998
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
6.0
5.0
4.0
3.0
2.0
1.0
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
240
200
TJ = 50 °C
160
120
80
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
40
0
0
0
25
50
75
100
125
150
175
1
CASE TEMPERATURE, ( °C)
PER DIODE
FORWARD CURRENT, AMPERES
100
10
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.1
REVERSE CURRENT, MICROAMPERES
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1.0
2
4
6
10
20
40 60
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1
0.01
TJ = 25 °C
0
20
40
60
80
100
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
100
NUMBER OF CYCLES AT 60Hz
1.8
140
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