AOSMD AON7422E 30v n-channel mosfet Datasheet

AON7422E
30V N-Channel MOSFET
General Description
Product Summary
The AON7422E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
30V
40A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.3mΩ
RDS(ON) (at VGS=4.5V)
< 6.0mΩ
ESD protected
100% UIS Tested
100% Rg Tested
D
DFN 3x3 EP
Bottom View
Top View
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
Avalanche Current
C
Avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0: Feb. 2011
IAS, IAR
45
A
EAS, EAR
101
mJ
36
Steady-State
Steady-State
W
14
3.1
RθJA
RθJC
www.aosmd.com
W
2
TJ, TSTG
Symbol
t ≤ 10s
A
16
PDSM
TA=70°C
A
20
PD
TC=100°C
V
200
IDSM
TA=70°C
±20
31
IDM
TA=25°C
Continuous Drain
Current
Units
V
40
ID
TC=100°C
Maximum
30
-55 to 150
Typ
30
60
2.8
°C
Max
40
75
3.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7422E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Min
Typ
30
36
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
On state drain current
VGS=10V, VDS=5V
200
TJ=55°C
VDS=0V, VGS=±16V
uA
1.85
2.4
V
3.5
4.3
5.5
6.8
VGS=4.5V, ID=16A
4.5
6
VDS=5V, ID=20A
85
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
10
RDS(ON)
Output Capacitance
V
5
VGS=10V, ID=20A
Coss
Units
1
IDSS
IS
Max
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A
0.7
mΩ
mΩ
S
1
V
40
A
1950
2445
2940
pF
270
390
510
pF
130
220
310
pF
1.2
2.4
3.6
Ω
32
41
50
nC
19
24
nC
15
7.2
nC
6.6
nC
7
ns
5
ns
41.5
ns
10.5
IF=20A, dI/dt=500A/µs
ns
17.5
22
31
40
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Feb. 2011
www.aosmd.com
Page 2 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
80
VDS=5V
3.5V
4V
60
4.5V
ID(A)
ID (A)
60
3V
40
40
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
6
3
4
5
6
Normalized On-Resistance
2
5
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
3
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
VGS=4.5V
1.4
1.2
1
ID=16A
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
12
ID=20A
1.0E+01
10
125°C
IS (A)
RDS(ON) (mΩ)
40
1.0E+00
8
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
2
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Feb. 2011
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3600
VDS=15V
ID=20A
3200
2800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2400
2000
1600
1200
Coss
800
2
400
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10µs
RDS(ON)
limited
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
0.1
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
160
10µs
Power (W)
100.0
10
5
200
1000.0
ID (Amps)
Crss
0
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.4°C/W
1
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb. 2011
www.aosmd.com
Page 4 of 6
AON7422E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
1
40
30
20
10
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
17
5
2
10
Power (W)
Current rating ID(A)
150
30
100
20
10
10
0
0
ZθJA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0
Pulse
0.001
0.1 Width (s)10 18
1000
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Feb. 2011
www.aosmd.com
Page 5 of 6
AON7422E
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Feb. 2011
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
www.aosmd.com
Page 6 of 6
Similar pages