ADPOW APT4030CNR N - channel enhancement mode high voltage power mosfet Datasheet

D
TO-254
G
400V 15.0A 0.300Ω
APT4030CNR
S
TM
POWER MOS IV
Avalanche Rated
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
• Faster Switching
• 100% Avalanche Tested
• Low Gate Charge
• Similar to the 2N7227, JX2N7227 and JV2N7227
MAXIMUM RATINGS
Symbol
VDSS
ID
• Popular TO-254 Package
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT4030CNR
UNIT
400
Volts
15
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
150
Watts
Linear Derating Factor
1.2
W/°C
VGSM
PD
TJ,TSTG
60
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
15
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
20
3
mJ
800
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
Volts
15
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.30
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-4016 Rev -
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT4030CNR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
15
22
1500
1800
385
540
160
240
CDC
Drain-to-Case Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
VGS = 10V
71
105
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
8
12
ID = ID [Cont.] @ 25°C
36
54
14
28
VDD = 0.5 VDSS
23
46
ID = ID [Cont.] @ 25°C
43
64
15
30
TYP
MAX
Qgd
VGS = 0V
Gate-Drain ("Miller ") Charge
td(on)
f = 1 MHz
Turn-on Delay Time
tr
td(off)
Turn-off Delay Time
tf
pF
VGS = 10V
Rise Time
nC
ns
RG = 1.80Ω
Fall Time
UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
UNIT
15
Amps
(Body Diode)
60
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
284
568
ns
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
4.5
9.0
µC
TYP
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
0.80
50
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
Starting Tj = +25°C, L = 7.11mH, RG = 25Ω, Peak IL = 15A
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
0.01
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-4016 Rev -
1.0
t1
t2
0.005
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
W/°C
APT4030CNR
12
V
I D , DRAIN CURRENT (AMPERES)
=6V
GS
15
5.5V
10
5V
5
4.5V
V =10V
GS
10
6V
5.5V
8
5V
6
4.5V
4
2
4V
4V
0
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
I D , DRAIN CURRENT (AMPERES)
15
T = -55°C
J
12
VDS> I D (ON) x RDS (ON)MAX.
230µ SEC. PULSE TEST
T = +25°C
J
T = +125°C
J
9
6
3
0
T = +125°C
J
T = +25°C
J
T = -55°C
J
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
4
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
8
2.5
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
GS
1.50
1.25
V
=10V
GS
V =20V
GS
1.00
0.75
D
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (VOLTS)
(NORMALIZED)
I D , DRAIN CURRENT (AMPERES)
12
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.75
1.2
16
0
0
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-4016 Rev -
I D , DRAIN CURRENT (AMPERES)
20
APT4030CNR
1µS
OPERATION HERE
LIMITED BY R
(ON)
DS
10µS
100µS
5
1mS
T
=+25°C
C
=+150°C
J
SINGLE PULSE
10mS
T
0.5
1
5
10
50 100
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
D
D
16
V
V
12
DS
DS
=80V
=200V
V
8
DS
=320V
4
0
1,000
C
oss
C
rss
100
DC
.1
20
C
iss
C, CAPACITANCE (pF)
10
1
10,000
0
20
40
60
80
100
Qgg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
I D , DRAIN CURRENT (AMPERES)
60
0
100
50
20
T = +150°C
J
10
T = +25°C
J
5
2
1
0
.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
1.27 (.050)
1.02 (.040)
6.91 (.272)
6.81 (.268)
3.78 (.149) Dia.
3.53 (.139)
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
3.81 (.150) BSC
050-4016 Rev -
6.60 (.260)
6.32 (.249)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)
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