® FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Low gate charge ( typical 4.8 nC ) • Low Crss ( typical 3.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability D ! ● ◀ G! TO-92 ! SSN Series GDS ▲ ● ● S Absolute Maximum Ratings Symbol Parameter FQN1N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 0.3 A 0.18 A IDM Drain Current - Pulsed 1.2 A - Continuous (TC = 100°C) (Note 1) VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 0.3 A EAR Repetitive Avalanche Energy (Note 1) 0.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C) 1 W Power Dissipation (TL = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 3 W 0.02 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter Typ Max Units RθJL Thermal Resistance, Junction-to-Lead (Note 6a) -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 6b) -- 140 °C/W ©2005 Fairchild Semiconductor Corporation FQN1N60C Rev. A 1 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET QFET Device Marking Device Package Reel Size Tape Width Quantity 1N60C FQN1N60C TO-92 -- -- 2000ea Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 50 µA VDS = 480 V, TC = 125°C -- -- 250 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.15 A -- 9.3 11.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 0.3 A -- 0.75 -- S -- 130 170 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 19 25 pF -- 3.5 6 pF -- 7 24 ns -- 21 52 ns -- 13 36 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 1.1 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4, 5) -- 27 64 ns -- 4.8 6.2 nC -- 0.7 -- nC -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 1.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.3 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/µs -- 190 -- ns -- 0.53 -- µC Qrr Reverse Recovery Charge (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 0.3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. a) Reference point of the RθJL is the drain lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design) FQN1N60C Rev. A 2 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 ID, Drain Current [A] 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o -55 C o 25 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 -2 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 0 10 1 10 10 2 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage I DR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 25 VGS = 10V 20 15 VGS = 20V 5 ※ Note : TJ = 25℃ 0 0.0 0.5 1.0 1.5 2.0 2.5 10 150℃ ※ Notes : 25℃ 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 Capacitance [pF] 1. VGS = 0V 2. 250µ s Pulse Test VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Ciss 150 Coss 100 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 10 0 ID, Drain Current [A] 250 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 30 10 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 1.1A 0 -1 10 0 0 10 1 10 1 2 3 4 5 6 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQN1N60C Rev. A 0 3 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Typical Performance Characteristics FQN1N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.15 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 0.3 Operation in This Area is Limited by R DS(on) 0 10 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms DC 0.2 0.1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 0.0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve 10 2 10 1 ZθJL(t), Thermal Response D = 0 .5 0 .2 0 .1 0 .0 5 10 10 0 .0 2 0 0 .0 1 s in g le p u ls e ※ N o te s : 1 . Z θ J L(t) = 5 0 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T L = P D M * Z θ J (L t) -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FQN1N60C Rev. A 4 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQN1N60C Rev. A VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQN1N60C Rev. A 6 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] (0.25) +0.10 0.38 –0.05 0.38 –0.05 ±0.20 3.86MAX 3.60 1.02 ±0.10 +0.10 1.27TYP [1.27 ±0.20] (R2.29) Dimensions in Millimeters FQN1N60C Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 FQN1N60C Rev. A www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET TRADEMARKS