ON MCR12DSN-1G Sensitive gate silicon controlled rectifier Datasheet

MCR12DSM, MCR12DSN
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control; CDI (Capacitive Discharge Ignition); and small
engines.
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SCRs
12 AMPERES RMS
600 − 800 VOLTS
Features
•
•
•
•
•
•
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Devices
G
A
MARKING
DIAGRAMS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
K
4
Value
Unit
YWW
R1
2DSxG
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 Hz to
60 Hz)
MCR12DSM
MCR12DSN
VDRM,
VRRM
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
IT(AV)
7.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 msec)
I2t
41
A2sec
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 10 sec, TC = 75°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 110
°C
1
Cathode
°C
2
Anode
Forward Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 75°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
Storage Temperature Range
V
DPAK
CASE 369C
STYLE 4
June, 2013 − Rev. 7
4
1
Tstg
3
600
800
−40 to 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
© Semiconductor Components Industries, LLC, 2013
1 2
1
IPAK
CASE 369D
STYLE 4
2
YWW
R1
2DSxG
3
Y
WW
R12DSx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MCR12DSM/D
MCR12DSM, MCR12DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
Max
Unit
RJC
RJA
RJA
2.2
88
80
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
−
−
−
−
10
500
12.5
18
V
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
TJ = 25°C
(VAK = Rated VDRM or VRRM; RGK = 1.0 K)
TJ = 110°C
IDRM,
IRRM
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 A)
VGRM
10
Peak Reverse Gate Blocking Current, (VGR = 10 V)
IGRM
−
−
1.2
A
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
VTM
−
1.3
1.9
V
5.0
−
12
−
200
300
0.45
−
0.2
0.65
−
−
1.0
1.5
−
0.5
−
1.0
−
6.0
10
0.5
−
1.0
−
6.0
10
−
2.0
5.0
2.0
10
−
−
50
100
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1 k)
Latching Current
(VD = 12 V, IG = 2.0 mA, RGK = 1 k)
TJ = 25°C
TJ = −40°C
TJ = 25°C
TJ = −40°C
TJ = 110°C
TJ = 25°C
TJ = −40°C
TJ = 25°C
TJ = −40°C
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 K, IT = 16 A(pk), RGK = 1.0 K)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
IGT
VGT
IH
IL
A
V
mA
mA
tgt
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110°C)
dv/dt
Critical Rate of Rise of On−State Current
(IPK = 50 A, PW = 40 sec, diG/dt = 1 A/sec, IGT = 10 mA)
di/dt
V/s
A/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 k. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.
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2
MCR12DSM, MCR12DSN
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
110
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
Anode −
105
100
95
90
dc
85
80
180°
= Conduction
Angle
75
70
0
1.0
2.0
= 30°
3.0
4.0
60°
5.0
90°
120°
6.0
7.0
8.0
16
180°
120°
14
90°
12
60°
dc
= Conduction
Angle
10
8.0
= 30°
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
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3
8.0
100
1.0
TYPICAL @ TJ = 25°C
r(t) , TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
MCR12DSM, MCR12DSN
MAXIMUM @ TJ = 110°C
10
MAXIMUM @ TJ = 25°C
1.0
0.1
ZJC(t) = RJC(t)Sr(t)
0.01
0
2.0
1.0
3.0
5.0
4.0
0.1
10
1.0
100
10 K
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
RGK = 1.0 K
100
GATE OPEN
10
1.0
-40 -25
0.1
-10
5.0
20
35
50
65
80
95
-40 -25
110
-10
5.0
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
10
110
10
RGK = 1.0 K
RGK = 1.0 K
IL, LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
1000
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1000
I GT, GATE TRIGGER CURRENT ( A)
0.1
1.0
0.1
-40 -25
-10
5.0
20
35
50
65
80
95
1.0
0.1
-40 -25
110
-10
5.0
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
110
MCR12DSM, MCR12DSN
10
1000
8.0
STATIC dv/dt (V/ s)
IH, HOLDING CURRENT (mA)
TJ = 25°C
6.0
IGT = 25 A
4.0
70°C
100
90°C
TJ = 110°C
10
IGT = 10 A
2.0
0
1.0
100
1000
10 K
100
1000
RGK, GATE-CATHODE RESISTANCE (OHMS)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate−Cathode Resistance
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
1000
TJ = 110°C
VD = 800 V
TJ = 110°C
100
STATIC dv/dt (V/ s)
STATIC dv/dt (V/ s)
400 V
600 V
VPK = 800 V
10
1.0
100
IGT = 25 A
IGT = 10 A
10
1.0
100
1000
1000
100
RGK, GATE-CATHODE RESISTANCE (OHMS)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
ORDERING INFORMATION
Package Type
Package
Shipping†
MCR12DSMT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
MCR12DSN−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MCR12DSNT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MCR12DSM, MCR12DSN
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MCR12DSM, MCR12DSN
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
T
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MCR12DSM/D
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