Central BAW101 Isolated high voltage silicon switching diode Datasheet

BAW101
SURFACE MOUNT
DUAL, ISOLATED HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW101 consists
of two electrically islolated high voltage switching
diodes packaged in an epoxy molded SOT-143 surface
mount case. This device is designed for applications
requiring dual high voltage switching diodes.
MARKING CODES: CJP or BAW101
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
SYMBOL
VR
300
V
Peak Repetitive Reverse Voltage
VRRM
IF
300
V
200
mA
IFRM
IFSM
400
mA
4.5
A
PD
TJ, Tstg
350
mW
-65 to +150
°C
ΘJA
357
°C/W
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
UNITS
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
VR=250V
IR
BVR
VR=250V, TA=150°C
IR=100μA
VF
IF=100mA
CT
trr
UNITS
150
nA
50
μA
1.3
V
VR=0, f=1.0MHz
5.0
pF
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
ns
300
V
0.9
R7 (8-February 2011)
BAW101
SURFACE MOUNT
DUAL, ISOLATED HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Cathode D1
2) Cathode D2
3) Anode D2
4) Anode D1
MARKING CODES: CJP or BAW101
R7 (8-February 2011)
w w w. c e n t r a l s e m i . c o m
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