MIG15J503H TOSHIBA INTELLIGENT POWER MODULE MIG15J503H MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI(silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Weight:18 g (Typ.) Furthermore, each lower arm emitter terminal has been independent so that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat resistance is realized. Feature • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • • The level shift circuit by high-voltage IC is built in. The simplification of a high side driver power supply is possible by the bootstrap system. • Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in. • Short Circuit Protection and Over Temperature Protection state are outputted. • The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control. • Low thermal resistance by adoption of original high thermal conduction resin. Since this product is MOS structure, it should be careful of static electricity in the case of handling. This tentative specification is a development examination stage, and may change the contents without a preliminary announcement. TOSHIBA CONFIDENTIAL 1 2002/12/10 MIG15J503H Pin Assignment 1 PGND U 2 U 3 V BB U 4 PGND V 5 V 6 Mark side V BB V 7 PGND W 8 W 9 V CC U FO U IN U IN X SGND U BS U CU V CC V FO V IN V IN Y SGND V BS V CV V CC W FO W IN W IN Z SGND W BS W CW V BB W 30 29 28 26 27 25 24 22 20 23 21 19 18 17 16 14 15 13 12 11 10 Marking Toshiba logotype Lot No. ※ MIG15J503H JAPAN product number TOSHIBA CONFIDENTIAL 2 2002/12/10 MIG15J503H BLOCK DIAGRAM 3 V BB U 2 U 1 PGND U 6 V BB V High V CC U 30 Side FO U 29 IN U 28 IN X 27 Under Under Volatge Voltage Driver Low Side Driver SGND U 26 Over Over Temp Current BS U 25 CU 24 V CC V 23 FO V 22 Under Under IN V 21 Volatge Voltage IN Y 20 High Side 18 CV 17 5 V Low Side Driver SGND V 19 BS V Driver Over Over Temp Current V CC W 16 4 PGND V 9 V BB W High Side FO W 15 IN W 14 IN Z 13 SGND W 12 BS W 11 CW 10 Under Under Volatge Voltage Driver 8 W Low Side Driver Over Over Temp Current TOSHIBA CONFIDENTIAL 7 PGND W 3 2002/12/10 MIG15J503H Pin Description Pin No. 1 Symbol Pin Description PGND U U-Phase Power Ground pin（Connect a current detecting resistor between this pin and SGND U pin) 2 U 3 V BB U 4 PGND V 5 V 6 V BB V 7 PGND W 8 W 9 V BB W U-Phase output pin U-Phase high-voltage power supply pin V-Phase Power Ground pin（Connect a current detecting resistor between this pin and SGND V pin) V-Phase output pin V-Phase high-voltage power supply pin W-Phase Power Ground pin（Connect a current detecting resistor between this pin and SGND W pin) W-Phase output pin W-Phase high-voltage power supply pin 10 CW W-Phase bootstrap capacitor connecting pin(-) 11 BS W W-Phase bootstrap capacitor connecting pin(+) 12 SGND W 13 IN Z W-Phase low -side input pin(Negative logic) 14 IN W W-Phase high-side input pin(Negative logic) 15 FO W W-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 16 V CC W W-Phase control power supply (+15V typ.) 17 CV V-Phase bootstrap capacitor connecting pin(-) 18 BS V V-Phase bootstrap capacitor connecting pin(+) 19 SGND V 20 IN Y V-Phase low -side input pin (Negative logic) 21 IN V V-Phase high-side input pin (Negative logic) 22 FO V V-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 23 V CC V V-Phase control power supply (+15V typ.) 24 CU U-Phase bootstrap capacitor connecting pin (-) 25 BS U U-Phase bootstrap capacitor connecting pin (+) 26 SGND U 27 IN X U-Phase low -side input pin (Negative logic) 28 IN U U-Phase high-side input pin (Negative logic) 29 FO U U-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) 30 V CC U U-Phase control power supply (+15V typ.) W-Phase Signal Ground pin V-Phase Signal Ground pin U-Phase Signal Ground pin TOSHIBA CONFIDENTIAL 4 2002/12/10 MIG15J503H Truth Tble Protection Circuit Detection State High Side Under Voltage Low Side Under Voltage ＩＧＢＴ State Input Fault Output IN(X)High Side Arm IN(X)Low Side Arm High Side Arm Low Side Arm FO(X) Un-Detecting Un-Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting H L OFF ON OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting L H ON OFF OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Short Circuit Over Temperature Detecting Un-Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Detecting Un-Detecting Un-Detecting Un-Detecting H L OFF ON OFF Detecting Un-Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Detecting Un-Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting H L OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Un-Detecting Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting H H OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting H L OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting L H OFF OFF OFF Detecting Detecting Un-Detecting Un-Detecting L L OFF OFF OFF Un-Detecting Un-Detecting Detecting Un-Detecting H H OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting H L OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting L H OFF OFF ON Un-Detecting Un-Detecting Detecting Un-Detecting L L OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting H H OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting H L OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting L H OFF OFF ON Un-Detecting Un-Detecting Un-Detecting Detecting L L OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting H H OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting H L OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting L H OFF OFF ON Un-Detecting Un-Detecting Detecting Detecting L L OFF OFF ON ・The above has indicated a part for single arm. ・There is no relevance of operation between arms. ・When the input of a high side arm and a low side arm is simultaneously set to "L", IGBT of a high side arm and a low side arm turns off. ・FO (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the load short circuit state, it will maintain the OFF between 10ms, if a Short Current Protection detects a Short Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set to "H" in the back in this state, OFF of an output and FO (X) are maintained between 10ms. Although FO (X) is turned off when FO (X) terminal for 10ms will not be in the simultaneous "H" state of an upper arm and a lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower arm being simultaneously set to "H." (Short Current Protection is a non-repetition. When FO (X) turns on, please turn off the input of all Phase.) ・If an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return operation, if temperature falls to Over Temperature Protection detection return temperature (Over Temperature Protection temperature- Over Temperature Protection hysteresis). TOSHIBA CONFIDENTIAL 5 2002/12/10 MIG15J503H Absolute Maximum Rating (Tj = 25°C) Item Symbol Rating Unit V BB 450 V V BB (surge) 500 V V CC 20 V V BS 20 V V CES 600 V Each Collector Current (DC) IC ±15 A Each Collector Current (PEAK) ICP ±30 A Input Voltage V IN 5.5 V Fault Output Supply Voltage V FO 20 V Fault Output Current IFO 15 mA PGND-SGND Voltage Difference V PGND-SGND ±5 V Output Voltage Rate of Change Dv/dt 20 kV/μs PC 43 W PC 25 W TOPE ー20~100 °C Tj 150 °C Storage Temperature Tstg ー40~125 °C Isolation Voltage（60Hz sinusoidal ,AC） V ISO 2500 (1min) Vrms Power Supply Voltage Collector-Emitter Voltage Collector Power Dissipation (Per 1 IGBT Chip) Collector Power Dissipation (Per 1 FRD Chip) Operating Temperature Junction Temperature (NOTE 1) (NOTE 1) Although a junction temperature is 150℃ the own maximum moment of a power chips which it builds in this Module, the average operation junction temperature for carrying out safe operation specifies it as 125℃ or less. TOSHIBA CONFIDENTIAL 6 2002/12/10 MIG15J503H Electrical Characteristics (Tj = 25°C) Item Symbol Condition Min. Typ. Max. V BB 50 300 400 V CC 13.5 15 17 V BS 13.5 15 17 V BB＝400V ､V IN ＝5V（1arm） 1 mA V CC ＝15 V､V IN ＝5V（1arm） 0.8 1.5 mA V CC ＝15 V､V IN ＝0 V（1arm） 1.1 1.5 mA V CC ＝15 V､V IN ＝5V（1arm） 330 600 μA V CC ＝15 V､V IN ＝0 V（1arm） 470 1000 μA V IH V IN ＝“H” 2.2 3.0 3.7 V IL V IN ＝“L” 2.2 3.0 3.7 V IN ＝“H”→"L" 0 V IN ＝“L”→"H" 0 IIH V CC ＝15 V､V IN ＝5V 50 100 200 IIL V CC ＝15 V､V IN ＝0 V 75 150 300 V sat U V CC ＝V BS＝15V, IC ＝15 A, Upper Arm 1.8 2.1 V sat L V CC ＝15V, IC ＝15 A, Lower Arm 1.8 2.1 V FU IF ＝15 A, Upper Arm 1.4 2.0 V FL IF ＝15 A, Lower Arm 1.4 2.0 Fault Output Voltage V FO IFO＝5 mA, 0.8 1.2 V Short Current Protection Voltage VR Short Current Protection (NOTE 2) 1.16 1.28 1.41 V 1.0 1.5 2.0 μs Operating Power Supply Voltage IBB Current dissipation ICC IBS input Voltage input Voltage hysteresis Input Current IGBT Saturation Voltage FRD Forward Voltage V INhys Unit V V V μA V V Short Current Protection delay time V R td Short Current Protection Fault Output Pulse Width V R th Short Current Protection 10 ms Over Temperature Protection TSD Over Temperature Protection 150 165 200 °C ΔTSD Over Temperature Protection return 20 °C Under Voltage Protection V BSUVD Upper Arm Under Voltage Protection 10.0 11.0 12.0 Under Voltage Protection recovery V BSUVR Upper Arm Under Voltage Protection recovery 10.5 11.5 12.5 Under Voltage Protection VccUVD Lower Arm Under Voltage Protection 10.5 11.5 12.5 Under Voltage Protection recovery VccUVR Lower Arm Under Voltage Protection recovery 11.0 12.0 13.0 IGBT turn-on propagation delay time tdON VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.5 Over Temperature Protection hys. IGBT rise time IGBT turn-on time IGBT turn-off propagation delay time IGBT fall time IGBT turn-off time tr VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.04 0.08 tON VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.5 0.9 tdOFF VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.5 tf VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.09 0.13 tOFF VBB＝300 V, IC＝15A, Inductance Load (NOTE 3) 0.6 1.0 0 300 ns 0 300 ns V BB＝300 V, IC＝15A, Inductance Load 1 μs V BB＝300 V, IF ＝15 A 100 ns IGBT vertical arm turn-on, a turn-off propagation delay time lag | tOFFL - tONH | IGBT vertical arm turn-on, a turn-off propagation delay time lag | tOFFH - tONL | daed time FRD reverse recovery time V tdaed trr V BB＝300 V, IC＝15A, Inductance Load （include each Phase） V BB＝300 V, IC＝15A, Inductance Load （include each Phase） TOSHIBA CONFIDENTIAL μs 7 2002/12/10 MIG15J503H (NOTE 2) VR measurement circuit U-Phase V-Phase 15V 5V 15V 5V 30 VCC U 23 VCC V PGND U 1 29 Fo U FoU PGND V 22 Fo V VR 4 FoV VR 26 SGND U 19 SGND V W-Phase Timing chart 15V 5V VR 16 VCC W PGND W 7 15 Fo W FoW VR 0V VR 12 SGND W Fo VR is measured by giving the sweep voltage from the outside like the above -mentioned. When the overcurrent detection value is set by an actual application, it is necessary to consider the resistance of the internal bonding wire. The resistance of the internal bonding wire is 11m Ω. (NOTE 3) Switching Waveform H Input Voltage L t rr Rating Current 90% 90% Collector Current IC 10% td O F F tf tOFF TOSHIBA CONFIDENTIAL 10% td O N tr t ON 8 2002/12/10 MIG15J503H The example of an application circuit (in the case of not insulating with a control side) 3 5V V CC U FO U IN U IN X 30 29 28 27 SGND U 26 + BS U 場 CONTROL CIRCUIT CU V CC V FO V IN V IN Y SGND V + BS V Over Temp 25 21 Under Under Volt Volt age age 20 19 Over Temp 18 11 U Over Curre nt PGND U 1 6 V BB V 23 22 2 Low Side Driver 24 C V 17 V CC W 16 FO W 15 IN W 14 IN Z 13 SGND W 12 + BS W Under Under Volt Volt age age High Side Driver V BB U High Side Driver 5 V Low Side Driver Over Curre nt + PGND V 4 9 Under Under Volt Volt age age Over Temp M V BB W High Side Driver 8 Low Side Driver Over Curre nt W PGND W 7 10 CW + 15V TOSHIBA CONFIDENTIAL 9 2002/12/10 High voltage MIG15J503H Package Outline Unit：mm 63 ±0 . 3 54 1 . 7±0 . 2 φ 0.15 M B B 6 10.5 ±1.0 φ 3.2 ±0 . 2 1 2 1 . 7±0 . 2 φ 0.15 φ 0.15 M 1.25 ±0 . 3 3 ±0 . 3 B 5 ±0 . 3 M B φ 0.15 M S AB B 0 . 5±0 . 2 0 . 8±0 . 2 0.1 S φ 0.15 M B 5 . 5±0 . 2 0 . 8±0 . 2 φ 0.1 M 0 . 5±0 . 2 4 13.5 ±0 . 3 3 . 2±0 . 2 Mark Side 28.1 23 ±0 . 3 3 . 7±0 . 2 A B φ 0.1 M φ 0.1 M 13.5 ±0 . 3 A TOSHIBA CONFIDENTIAL 10 2002/12/10 MIG15J503H RESTRICTIONS ON PRODUCT USE 000707EBA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. TOSHIBA CONFIDENTIAL 11 2002/12/10