OptiMOS®2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level R DS(on),max (TO252) • Excellent gate charge x R DS(on) product (FOM) 85 V 12.4 ID m: 67 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 12CNE8N 12CNE8N 12CNE8N 12CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 67 T C=100 °C 48 Pulsed drain current2) I D,pulse T C=25 °C 268 Avalanche energy, single pulse E AS I D=67 A, R GS=25 : 154 Reverse diode dv /dt dv /dt I D=67 A, V DS=68 V, di /dt =100 A/μs, T j,max=175 °C 6 Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C A mJ kV/μs ±20 V 125 W -55 ... 175 °C 55/175/56 IEC climatic category; DIN IEC 68-1 1) Unit J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Rev. 1.05 page 1 2007-08-29 Parameter IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Values Symbol Conditions Unit min. typ. max. - - 1.2 minimal footprint - - 62 6 cm2 cooling area 4) - - 40 minimal footprint - - 75 6 cm2 cooling area 4) - - 50 85 - - Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) R thJC R thJA Thermal resistance, junction ambient (TO252) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=83 μA 2 3 4 Zero gate voltage drain current I DSS V DS=68 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=68 V, V GS=0 V, T j=125 °C - 10 100 V μA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=67 A, (TO252) - 9.2 12.4 m: V GS=10 V, I D=67 A, (TO262) - 9.4 12.6 V GS=10 V, I D=67 A, (TO220, TO263) - 9.7 12.9 - 1.5 - : 39 77 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=67 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.05 page 2 2007-08-29 Parameter IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Values Symbol Conditions Unit min. typ. max. - 3260 4340 - 608 809 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=40 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 44 66 Turn-on delay time t d(on) - 17 26 Rise time tr - 21 31 Turn-off delay time t d(off) - 32 48 Fall time tf - 8 12 Gate to source charge Q gs - 19 26 Gate to drain charge Q gd - 12 17 - 21 30 V DD=40 V, V GS=10 V, I D=33.5 A, R G=1.6 : pF ns Gate Charge Characteristics 5) V DD=40 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 48 64 Gate plateau voltage V plateau - 5.5 - Output charge Q oss - 46 61 nC - - 67 A - - 268 - 1 1.2 V - 103 - ns - 255 - nC V DD=40 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=67 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/μs See figure 16 for gate charge parameter definition Rev. 1.05 page 3 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 140 70 120 60 100 50 80 40 I D [A] P tot [W] 1 Power dissipation 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 μs 102 10 μs 100 100 μs 101 0.5 Z thJC [K/W] I D [A] 1 ms DC 10 ms 0.2 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.05 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 30 10 V 5V 8V 25 7V 200 5.5 V 150 R DS(on) [m:] 20 I D [A] 6.5 V 100 15 6V 6V 10 10 V 5.5 V 50 5 5V 4.5 V 0 0 1 0 2 3 4 5 0 20 V DS [V] 40 60 80 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 200 80 150 60 I D [A] g fs [S] 250 100 40 175 °C 50 20 25 °C 0 0 0 2 4 6 8 Rev. 1.05 0 20 40 I D [A] V GS [V] page 5 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=67 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 30 4 3.5 25 830 μA 3 83 μA 2.5 V GS(th) [V] R DS(on) [m:] 20 98 % 15 typ 2 1.5 10 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 25 °C 104 175 °C, 98% I F [A] C [pF] Coss 103 175 °C 102 Ciss 25 °C, 98% 101 102 Crss 101 100 0 20 40 60 80 V DS [V] Rev. 1.05 0 0.5 1 1.5 2 V SD [V] page 6 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 : V GS=f(Q gate); I D=67 A pulsed parameter: T j(start) parameter: V DD 100 12 40 V 10 20 V 25 °C 100 °C 60 V 8 V GS [V] I AS [A] 150 °C 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 50 Q gate [nC] t AV [μs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 100 V GS Qg V BR(DSS) [V] 95 90 V g s(th) 85 80 Q g(th) Q sw Q gs 75 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.05 page 7 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G PG-TO220-3: Outline Rev. 1.05 page 8 2007-08-29 Rev. 1.05 page 9 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G PG-TO-263-3 (D²-Pak) Rev. 1.05 page 10 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G PG-TO252-3: Outline Rev. 1.05 page 11 2007-08-29 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.05 page 12 2007-08-29