IXYS IXFH28N60P3 Polar3 hiperfet power mosfet Datasheet

Advance Technical Information
IXFQ28N60P3
IXFH28N60P3
Polar3TM HiperFETTM
Power MOSFETs
VDSS
ID25
= 600V
= 28A
Ω
≤ 260mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-3P (IXFQ)
G
D
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
600
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
600
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
TC = 25°C
28
A
IDM
TC = 25°C, Pulse Width Limited by TJM
70
A
IA
TC = 25°C
14
A
EAS
TC = 25°C
500
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
35
V/ns
PD
TC = 25°C
695
W
-55 ... +150
°C
TJ
S
TO-247 ( IXFH)
G
TJM
150
°C
-55 ... +150
°C
Features
300
260
°C
°C
z
1.13 / 10
Nm/lb.in.
z
5.5
6.0
g
g
z
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque
Weight
TO-3P
TO-247
D
z
Tab
S
G = Gate
S = Source
Tstg
TL
Tsold
Tab
D
= Drain
Tab = Drain
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
600
VGS(th)
VDS = VGS, ID = 2.5mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
z
V
5.0
V
±100
nA
25 μA
1.5 mA
260 mΩ
High Power Density
Easy to Mount
Space Savings
Applications
z
z
z
z
z
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS100322(03/11)
IXFQ28N60P3
IXFH28N60P3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
18
Ciss
Coss
30
S
3560
pF
360
pF
3.3
pF
1.0
Ω
27
ns
18
ns
48
ns
19
ns
50
nC
17
nC
14
nC
0.25
0.18 °C/W
°C/W
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
TO-3P Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
IRM
QRM
Characteristic Values
Min.
Typ.
Max.
28
A
Repetitive, Pulse Width Limited by TJM
112
A
IF = IS, VGS = 0V, Note 1
1.4
V
250
ns
IF = 14A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
9.0
A
0.8
μC
TO-247 Outline
1
2
∅P
3
e
Note
Terminals: 1 - Gate
3 - Source
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFQ28N60P3
IXFH28N60P3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
28
60
VGS = 10V
8V
24
VGS = 10V
8V
50
20
7V
7V
ID - Amperes
ID - Amperes
40
16
12
6V
30
20
8
6V
10
4
5V
5V
0
0
0
1
2
3
4
5
6
7
0
8
5
10
15
25
30
Fig. 4. RDS(on) Normalized to ID = 14A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
28
3.4
VGS = 10V
7V
20
VGS = 10V
3.0
R DS(on) - Normalized
24
ID - Amperes
20
VDS - Volts
VDS - Volts
6V
16
12
8
2.6
I D = 28A
2.2
I D = 14A
1.8
1.4
1.0
5V
4
0.6
0
0.2
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 14A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
30
3.4
VGS = 10V
TJ = 125ºC
25
2.6
20
ID - Amperes
R DS(on) - Normalized
3.0
2.2
1.8
10
TJ = 25ºC
1.4
15
5
1.0
0.6
0
0
10
20
30
40
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
50
60
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFQ28N60P3
IXFH28N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
50
60
TJ = - 40ºC
50
TJ = 125ºC
25ºC
- 40ºC
25ºC
g f s - Siemens
ID - Amperes
40
30
20
40
125ºC
30
20
10
10
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
10
20
VGS - Volts
30
40
50
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
100
10
90
9
80
8
70
7
VDS = 300V
VGS - Volts
IS - Amperes
I D = 14A
60
50
40
30
I G = 10mA
6
5
4
3
TJ = 125ºC
20
2
TJ = 25ºC
10
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
5
10
VSD - Volts
15
20
25
30
35
40
45
50
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
Ciss
100µs
1,000
10
ID - Amperes
Capacitance - PicoFarads
RDS(on) Limit
Coss
100
1
10
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
f = 1 MHz
1
1ms
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFQ28N60P3
IXFH28N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.3
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_28N60P3(K7)03-23-11
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