Microsemi APTGT150SK120D1G Buck chopper trench field stop igbt power module Datasheet

APTGT150SK120D1G
Buck chopper
Trench + Field Stop IGBT
Power Module
Q1
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
3
4
5
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M5 power connectors
1
2
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 125°C
300A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
December, 2009
IC
Max ratings
1200
220
150
300
±20
690
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-4
APTGT150SK120D1G – Rev 2
Symbol
VCES
APTGT150SK120D1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 6 mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.7
2.0
5.8
Max
Unit
250
2.1
µA
6.5
600
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=150A
VCE=600V
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 150A
Tj = 125°C
RG = 4.7Ω
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Min
Typ
10.8
0.56
0.5
nF
1.4
µC
250
90
550
ns
130
300
100
650
ns
180
11
mJ
26
600
A
Chopper diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1200V
IF = 150A
VGE = 0V
IF = 150A
VR = 600V
di/dt =3000A/µs
Err
Reverse Recovery Energy
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Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
Max
250
500
150
1.6
1.6
250
350
15
29
7
12
Unit
V
µA
A
2.1
V
December, 2009
IRM
Test Conditions
ns
µC
mJ
2-4
APTGT150SK120D1G – Rev 2
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT150SK120D1G
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
-40
-40
-40
2
3
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
Typ
IGBT
Diode
For terminals
To Heatsink
M5
M6
Max
0.18
0.34
Unit
°C/W
V
150
125
125
3.5
5
180
°C
N.m
g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Forward Characteristic of diode
300
40
ZCS
30
ZVS
VCE=600V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
250
200
IF (A)
20
TJ=125°C
150
100
50
TJ=25°C
0
0
10
TJ=125°C
50
Hard
switching
90
130
IC (A)
170
0
210
0.4
0.8
1.2
1.6
VF (V)
2
December, 2009
10
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.1
0.05
Diode
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-4
APTGT150SK120D1G – Rev 2
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
50
APTGT150SK120D1G
Output Characteristics (VGE=15V)
Output Characteristics
300
300
VGE=17V
TJ=125°C
VGE=13V
200
200
150
VGE=15V
150
100
100
50
50
0
VGE=9V
0
0
1
2
VCE (V)
3
4
0
1
2
VCE (V)
3
4
Energy losses vs Collector Current
Transfert Characteristics
300
60
TJ=25°C
250
VCE = 600V
VGE = 15V
RG = 4.7 Ω
TJ = 125°C
50
200
40
E (mJ)
IC (A)
TJ = 125°C
250
TJ=25°C
IC (A)
IC (A)
250
TJ=125°C
150
Eoff
Eon
30
20
100
TJ=125°C
50
Err
10
Eon
0
0
5
6
7
8
9
10
11
0
12
50
100
Switching Energy Losses vs Gate Resistance
50
300
300
250
Eoff
IC (A)
E (mJ)
250
Reverse Bias Safe Operating Area
Eon
30
20
200
350
VCE = 600V
VGE =15V
IC = 150A
TJ = 125°C
40
150
IC (A)
VGE (V)
Eon
150
VGE=15V
TJ=125°C
RG=4.7 Ω
100
Err
10
200
50
0
0
4
8
12
16
20
24
28
Gate Resistance (ohms)
0
32
400
800
1200
1600
VCE (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.9
IGBT
0.7
0.12
0.04
December, 2009
0.5
0.08
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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4-4
APTGT150SK120D1G – Rev 2
Thermal Impedance (°C/W)
0.2
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