SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Note: mA JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2H1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Internal connections 3 3 DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K16FS Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V ⏐Yfs⏐ VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4 V ⎯ 1.5 3.0 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4.0 ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 RDS (ON) Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 4.5 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.8 ⎯ pF VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 70 ⎯ ⎯ 125 ⎯ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit (b) VIN 2.5 V OUT 2.5 V 90% 50 Ω IN 0 10 μs 0V RL VDD (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3K16FS ID – VDS ID – VGS 250 1000 Common source 10 2.1 1.9 150 1.7 100 1.5 50 (mA) VDS = 3 V 2.3 100 ID 200 Common source Ta = 25°C 10 Drain current Drain current ID (mA) 2.5 4 3 Ta = 100°C 25°C −25°C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage VDS 0.01 0 2 (V) 1 Gate-Source voltage RDS (ON) – ID 12 2 Common source Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 10 8 VGS = 1.5 V 4 2.5 V 2 ID = 10 mA 5 4 3 Ta = 100°C 2 25°C 1 −25°C 4V 10 100 Drain current ID 0 0 1000 2 4 RDS (ON) – Ta Vth (V) Common source VGS = 1.5 V, ID = 1 mA 5 Gate threshold voltage Drain-Source on resistance RDS (ON) (Ω) 7 4 2.5 V, 10 mA 2 4 V, 10 mA 1 0 −25 0 25 50 75 Ambient temperature 8 VGS 10 (V) Vth – Ta 2 3 6 Gate-Source voltage (mA) 8 6 (V) RDS (ON) – VGS Ta = 25°C 0 1 VGS 6 Common source 6 3 100 Ta 125 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 150 (°C) Common source ID = 0.1 mA VDS = 3 V 0 25 50 75 Ambient temperature 3 100 Ta 125 150 (°C) 2007-11-01 SSM3K16FS ⎪Yfs⎪ – ID IDR – VDS 250 50 30 10 5 3 1 1 200 Common source VGS = 0 V Ta = 25°C D IDR (mA) 300 Common source VDS = 3 V Ta = 25°C 100 Drain reverse voltage Forward transfer admittance ⎪Yfs⎪ (mS) 500 10 100 Drain current ID 150 S 100 50 0 0 1000 IDR G −0.2 (mA) −0.4 −0.6 Drain-Source voltage VDS −1.2 −1.4 (V) 5000 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 3000 5 Crss Common source 1 VGS = 0 V f = 1 MHz (ns) Ciss Coss t 10 toff 1000 500 Switching time (pF) 50 C −1 t – ID C – VDS 100 Capacitance −0.8 300 tf 100 ton 50 30 tr Ta = 25°C 0.3 0.1 0.5 1 5 10 Drain-Source voltage 50 VDS 100 10 0.1 (V) 1 Drain current 10 ID 100 (mA) PD – Ta 200 Drain power dissipation PD (mW) 250 150 100 50 0 0 20 40 60 80 100 Ambient temperature 120 Ta 140 160 (°C) 4 2007-11-01 SSM3K16FS RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01