SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching Applications Unit: mm · Component package suitable for high-density mounting · Small Package · Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) · Low-voltage operation possible Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±10 V ID -1.5 IDP (Note2) -3.0 Drain power dissipation (Ta = 25°C) PD (Note1) 1250 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C DC Drain current Note1: Pulse A JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2, t = 10 s) Note2: The pulse width limited by max channel temperature. Marking Equivalent Circuit 3 3 DD 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-17 SSM3J02T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage V (BR) DSS Drain Cut-off current IDSS Test Condition VGS = ±10 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 Min Typ. Max Unit ¾ ¾ ±1 mA -30 ¾ ¾ V ¾ ¾ -1 mA Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA -0.6 ¾ -1.1 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -0.3 A (Note3) 0.6 ¾ ¾ S Drain-Source ON resistance RDS (ON) ID = -0.3 A, VGS = -4 V (Note3) ¾ 0.4 0.5 ID = -0.3 A, VGS = -2.5 V (Note3) ¾ 0.55 0.7 W Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 150 ¾ pF Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 21 ¾ pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 61 ¾ pF VDD = -15 V, ID = -0.3 A, VGS = 0 to -2.5 V, RG = 4.7 W ¾ 55 ¾ ¾ 52 ¾ Switching time Note3: Turn-on time ton Turn-off time toff ns Pulse test Switching Time Test Circuit (a) Test circuit 0 0 OUT IN VDS (ON) RL 10 ms VIN 90% -2.5 V RG -2.5 V 10% (b) VIN VGS 90% (c) VOUT VDS 10% VDD VDD VDD = -15 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C tr tf ton toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2 2002-01-17 SSM3J02T ID – VDS ID – VGS -1.4 -10000 Common Source Common Source -2.2 -1000 VDS = -3 V -1 -2.0 -0.8 -0.6 -1.8 -0.4 -1.6 -0.2 (mA) Ta = 25°C -100 -10 Drain current (A) ID Drain current -2.5 ID -4.0 -1.2 -0.5 -1 -1.5 Drain-source voltage VDS 25°C -1 -25°C -0.1 -0.01 VGS = -1.4 V 0 0 Ta = 100°C -0.001 0 -2 -0.5 -1 Gate-source voltage (V) RDS (ON) – ID (V) ID = -0.3 A Drain-Source on resistance RDS (ON) (9) Drain-Source on resistance RDS (ON) (9) VGS -3 Common Source Ta = 25°C 1 VGS = -2.5 V 0.5 -4 V 0 0 -0.2 -0.4 -0.8 -0.6 Drain current ID -1 0.8 VGS = -2.5 V -4 V 0.6 0.4 0.2 0 -50 -1.2 (A) 0 50 100 150 Ambient temperature Ta (°C) |Yfs| – ID C – VDS 1000 (pF) Common Source VDS = -3 V Ta = 25°C Capacitance C Forward transfer admittance |Yfs| (S) -2.5 1 Common Source 3 -2 RDS (ON) – Ta 1.5 10 -1.5 1 0.3 0.1 300 Ciss 100 Coss 30 10 0.03 3 0.01 -0.001 1 -0.1 Crss Common Source VGS = 0 V f = 1 MHz Ta = 25°C -0.01 -0.1 Drain current ID -1 -4 (A) -1 -10 Drain-Source voltage VDS 3 -100 -400 (V) 2002-01-17 SSM3J02T PD – Ta t – ID 10000 1.5 Switching time tf 300 100 ton 30 10 -0.001 tr -0.01 -0.1 Drain current -1 ID 1.25 Mounted on FR4 board t = 10 s (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 645 mm2) PD Drain power dissipation toff 1000 t (ns) 3000 (W) Common Source VDD = -15 V VGS = 0 to -2.5 V RG = 4.7 W Ta = 25°C 1 0.75 DC 0.5 0.25 -4 0 0 (A) 25 50 75 100 125 150 Ambient temperature Ta (°C) Safe operating area -10 ID max (pulsed)* 1 ms* ID max (continuous) 10 ms* DC operation Ta = 25°C -0.1 -0.01 10 s Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 645 mm2) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.001 -0.1 -1 VDSS max -10 Drain-Source voltage VDS -100 (V) rth – tw rth (°C /W) 1000 Transient thermal impedance Drain current ID (A) -1 100 10 Single pulse Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 4 10 tw 100 1000 (s) 2002-01-17 SSM3J02T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-17