Linear LS5905-9 Low leakage low drift monolithic dual n-channel jfet Datasheet

LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
LOW DRIFT
|∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE
IG = 150fA TYP.
LOW PINCHOFF
VP= 2V TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
S1
-65° to +150°C
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-VGSS
G1
D1
Drain to Source Voltage
40V
-IG(f)
Gate Forward Current
10mA
-IG
Gate Reverse Current
10µA
3
5
S2
D1 2
D2
-VDSO
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
G2
6 D2
1
S1
G1
7
G2
S2
22 X 20 MILS
BOTTOM VIEW
40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS5906 LS5907 LS5908 LS5909 LS5905
5
10
20
40
40
|∆VGS1-2 /∆T| max. Drift vs. Temperature
UNITS CONDITIONS
µV/°C VDG= 10V, ID= 30µA
TA=-55°C to +125°C
|VGS1-2| max.
Offset Voltage
5
5
10
15
15
mV
VDG=10V
-IGmax.
Operating
1
1
1
1
3
pA
-IGmax.
High Temperature
1
1
1
1
3
nA
TA= +125°C
-IGSSmax.
At Full Conduction
2
2
2
2
5
pA
VDS= 0V
-IGSSmax.
High Temperature
5
5
5
5
10
nA
TA= +125°C
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
BVGGO
ID= 30µA
VGS= 20V
MIN.
40
TYP.
60
MAX.
--
UNITS
V
Gate-to-Gate Breakdown
40
--
--
V
IG= 1nA
ID= 0
I S= 0
Yfss
TRANSCONDUCTANCE
Full Conduction
70
300
500
µmho
VDG= 10V
VGS= 0
f= 1kHz
Yfs
Typical Operation
50
100
200
µmho
VDG= 10V
ID= 30µA
f= 1kHz
|Yfs1-2/Yfs|
Mismatch
--
1
5
%
IDSS
DRAIN CURRENT
Full Conduction
60
400
1000
µA
VDG= 10V
VGS= 0
|IDSS1-2/IDSS|
Mismatch at Full Conduction
--
2
5
%
VGS(off) or VP
GATE VOLTAGE
Pinchoff Voltage
0.6
2
4.5
V
VDS= 10V
ID= 1nA
VGS
Operating Range
--
--
4
V
VDS= 10V
ID= 30µA
IGGO
GATE CURRENT
Gate-to-Gate Leakage
--
1
--
pA
VGG=20V
Linear Integrated Systems
CONDITIONS
VDS= 0
ID= 1nA
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
YOSS
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
YOS
|YOS1-2|
MIN.
TYP.
MAX. UNITS
--
--
5
µmho
Operating
--
0.1
0.1
µmho
Differential
--
0.01
0.1
µmho
CONDITIONS
VDG= 10V
VGS= 0
VDG= 10V
ID= 30µA
COMMON MODE REJECTION
CMR
-20 log |∆VGS1-2/∆VDS|
--
90
--
dB
∆VDS= 10 to 20V
ID= 30µA
CMR
-20 log |∆VGS1-2/∆VDS|
--
90
--
dB
∆VDS= 5 to 10V
ID= 30µA
VDS= 10V
f= 100Hz
VDG= 10V
NBW= 1Hz
VGS= 0 RG= 10MΩ
NBW= 6Hz
ID= 30µA f= 10Hz
NOISE
NF
Figure
--
--
1
dB
en
Voltage
--
20
70
nV/√Hz
CISS
CAPACITANCE
Input
--
--
3
pF
VDS= 10V
VGS= 0
f= 1MHz
CRSS
Reverse Transfer
--
--
1.5
pF
VDS= 10V
VGS= 0
f= 1MHz
CDD
Drain-to-Drain
--
--
0.1
pF
VDG= 20V
ID= 30µA
TO-71
P-DIP
TO-78
0.320 (8.13)
0.290 (7.37)
Six Lead
0.230
DIA.
0.209
0.195
DIA.
0.175
0.030
MAX.
0.150
0.115
6 LEADS
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
0.016
0.019
DIM. A
MIN. 0.500
0.016
0.021
DIM. B
SEATING
PLANE
0.405
(10.29)
MAX.
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.200
0.100
0.050
5
6
45°
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
1
8
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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