Central MPQ2222 Npn silicon quad transistor Datasheet

MPQ2222
MPQ2222A
NPN SILICON QUAD TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2222 and
MPQ2222A types are comprised of four independent
NPN silicon transistors mounted in a 14-pin DIP,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
Thermal Resistance (total package)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
MPQ2222
60
40
5.0
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
MPQ2222
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
50
ICBO
VCB=60V
IEBO
VEB=3.0V
100
BVCBO
IC=10μA
60
BVCEO
IC=10mA
40
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.4
VCE(SAT)
IC=300mA, IB=30mA
1.6
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=150mA, IB=15mA
1.3
2.6
VBE(SAT)
IC=300mA, IB=30mA
VBE(SAT)
IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
hFE
VCE=10V, IC=1.0mA
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=300mA
30
hFE
VCE=10V, IC=500mA
fT
VCE=20V, IC=20mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
30
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
MPQ2222A
75
40
6.0
500
650
1.9
-65 to +150
66
MPQ2222A
MIN
MAX
10
100
75
40
6.0
0.3
1.0
0.6
1.2
2.0
35
50
75
100
300
40
200
8.0
30
35
285
UNITS
V
V
V
mA
mW
W
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R2 (30-January 2012)
MPQ2222
MPQ2222A
NPN SILICON QUAD TRANSISTOR
TO-116 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector Q1
2) Base Q1
3) Emitter Q1
4) No Connection
5) Emitter Q2
6) Base Q2
7) Collector Q2
8) Collector Q3
9) Base Q3
10) Emitter Q3
11) No Connection
12) Emitter Q4
13) Base Q4
14) Collector Q4
MARKING: FULL PART NUMBER
R2 (30-January 2012)
w w w. c e n t r a l s e m i . c o m
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