DIODES SBL1060CT

SPICE MODEL: SBL1030CT SBL1035CT SBL1040CT SBL1045CT SBL1050CT SBL1060CT
SBL1030CT - SBL1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
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·
Schottky Barrier Chip
·
·
·
·
Low Power Loss, High Efficiency
·
Guard Ring Die Construction for
Transient Protection
TO-220AB
L
High Surge Capability
B
High Current Capability and Low Forward Voltage Drop
C
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
D
K
Lead Free Finish, RoHS Compliant (Note 3)
A
Mechanical Data
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·
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M
1
2
3
E
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
J
N
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
H H
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
P
Pin 1 +
Pin 2 Pin 3 +
Marking: Type Number
+
Case
Dim
Min
Max
A
14.48
15.75
B
10.00
10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70
14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
Weight: 2.24 grams (approx.)
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
Symbol 1030CT
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 95°C
(Note 1)
SBL
1035CT
SBL
1040CT
SBL
1045CT
SBL
1050CT
SBL
1060CT
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
175
A
Forward Voltage Drop
VFM
@ IF = 5.0A, TC = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case
(Note 1)
Operating and Storage Temperature Range
Notes:
0.55
0.70
V
IRM
0.5
50
mA
Cj
450
pF
RqJC
5.5
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23048 Rev. 4 - 2
1 of 3
www.diodes.com
SBL1030CT - SBL1060CT
ã Diodes Incorporated
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
20
16
12
8
4
SBL1030CT - SBL10450CT
10
SBL1050CT - SBL1060CT
1.0
0.1
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics per Element
4000
300
Tj = 25°C
8.3ms single half-sine-wave
JEDEC method
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.4
200
150
100
1000
50
100
0
1
0.1
100
10
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
10
TC = 125°C
1.0
TC = 75°C
0.1
TC = 25°C
0.01
0.001
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23048 Rev. 4 - 2
2 of 3
www.diodes.com
SBL1030CT - SBL1060CT
Ordering Information
(Note 4)
Device
Packaging
Shipping
SBL10xxCT*
TO-220AB
50/Tube
* xx = Device type, e.g. SBL1045CT
Notes:
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS23048 Rev. 4 - 2
3 of 3
www.diodes.com
SBL1030CT - SBL1060CT