ON NID6002N Self−protected fet with temperature and current limit Datasheet

NID6002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
65 V, 6.5 A, Single N−Channel, DPAK
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HDPlus™ devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible on−resistance per silicon area
while incorporating smart features. Integrated thermal and current
limits work together to provide short circuit protection. The devices
feature an integrated Drain−to−Gate Clamp that enables them to
withstand high energy in the avalanche mode. The Clamp also
provides additional safety margin against unexpected voltage
transients. Electrostatic Discharge (ESD) protection is provided by an
integrated Gate−to−Source Clamp.
Features
•
•
•
•
•
•
•
VDSS
(Clamped)
RDS(on) TYP
ID TYP
(Limited)
65 V
210 mW
6.5 A
Drain
Gate
Input
RG
Overvoltage
Protection
MPWR
ESD Protection
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Package is Available
Current
Limit
Temperature
Limit
Current
Sense
Source
MARKING
DIAGRAM
1
DPAK
CASE 369C
STYLE 2
D6002N
Y
WW
G
2
3
= Device Code
= Year
= Work Week
= Pb−Free Device
YYW
D6
002NG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NID6002NT4
NID6002NT4G
Package
Shipping †
DPAK
2500/Tape & Reel
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
NID6002N/D
NID6002N
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
70
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current
Continuous
ID
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Internally Limited
PD
W
1.3
2.5
°C/W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 50 Vdc, VGS = 5.0 Vdc,
IL = 1.3 Apk, L = 160 mH, RG = 25 W)
Operating and Storage Temperature Range
(Note 3)
RqJC
RqJA
RqJA
3.0
95
50
EAS
143
mJ
TJ, Tstg
−55 to 150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
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2
NID6002N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
65
70
V
−
27
100
−
45
200
1.0
−
1.85
5.0
2.4
−
−
185
210
−
−
210
445
240
520
−
0.9
1.1
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 V, ID = 2 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 52 V, VGS = 0 V)
IDSS
Gate Input Current
(VGS = 5.0 V, VDS = 0 V)
IGSS
mA
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mA)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 V, ID = 2.0 A, TJ @ 25°C)
RDS(on)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 25°C)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 150°C)
RDS(on)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
V
−mV/°C
mW
mW
VSD
V
SWITCHING CHARACTERISTICS
Turn−on Delay Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID
td(on)
−
103
120
ns
Turn−on Rise Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID
trise
−
246
285
ns
Turn−off Delay Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID
td(off)
−
742
850
ns
Turn−off Fall Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID
tfall
−
707
780
ns
Slew Rate ON
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD
dVDS/dTon
−
73
−
V/ms
Slew Rate OFF
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD
dVDS/dToff
−
35
−
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C (Note 6)
VDS = 10 V, VGS = 5.0 V, TJ = 130°C (Note 6)
VDS = 10 V, VGS = 10 V, TJ = 25°C (Note 6)
ILIM
4.0
4.0
−
6.4
5.5
7.9
11
11
−
A
Temperature Limit (Turn−off)
VGS = 5.0 V
TLIM(off)
150
180
200
°C
Thermal Hysteresis
VGS = 5.0 V
DTLIM(on)
−
10
−
°C
Temperature Limit (Turn−off)
VGS = 10 V
TLIM(off)
150
180
200
°C
Thermal Hysteresis
VGS = 10 V
DTLIM(on)
−
20
−
°C
Input Current during
Thermal Fault
VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault)
VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault)
Ig(fault)
5.5
12
5.2
11
−
mA
8000
400
−
−
−
−
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Current limit measured at 380 ms after gate pulse.
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3
V
NID6002N
TYPICAL PERFORMANCE CURVES
12
6
TJ = −55°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
10 V
10
8
5V
4.5 V
6
4.0 V
4
3.5 V
2
TJ = 25°C
5
4
TJ = 100°C
3
2
TJ = 100°C
1
TJ = 25°C
3.0 V
0
10
5.0
20
15
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
1
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.27
ID = 2 A
TJ = 25°C
0.26
0.25
0.24
0.23
0.22
0.21
0.20
0.19
0.18
3.0
5.0
7.0
9.0
11
TJ = 25°C
0.22
VGS = 5 V
0.21
0.20
0.19
VGS = 10 V
0.18
2.0
2.5
3.0
3.5
4.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
5
0.23
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1E−03
1.8
ID = 3.75 A
VGS = 10 V
8E−04
1.4
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED) (W)
TJ = −55°C
0
1.2
1
0.8
6E−04
TJ = 100°C
4E−04
2E−04
0.6
0.4
−55
0E+00
−35
−15
5
25
45
65
85
105
0
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
70
NID6002N
TYPICAL PERFORMANCE CURVES
12000
7
VGS = 0 V
TJ = 25°C
VDS = 0 V
TJ = 160°C
10000
6
8000
IGSS (mA)
5
4
3
6000
4000
2
2000
1
0
0.0
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
6
7
6.5
7.5
8
VGS = 10 V
VGS = 5 V
6
Current
Limit
4
Temperature
Limit
2
0
0E+0
1E−3
2E−3
8.5
9
9.5
10 10.5
Figure 8. Input Current vs. Gate Voltage
12
10
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Diode Forward Voltage vs. Current
DRAIN CURRENT (AMPS)
IS, SOURCE CURRENT (AMPS)
8
3E−3
4E−3
5E−3
6E−3
7E−3
TIME (seconds)
Figure 9. Short Circuit Response*
*(Actual thermal cycling response in short circuit dependent on device
power level, thermal mounting, and ambient temperature conditions)
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5
NID6002N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
V
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
C
B
3
U
K
F
J
L
H
D
G
M
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC)
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NID6002N/D
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