DIODES MBR2560CT

MBR2535CT - MBR2560CT
30A SCHOTTKY BARRIER RECTIFIER
Features
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·
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AB
L
B
C
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Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
H
2.29
2.79
D
K
A
1
2
3
E
Mechanical Data
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·
M
J
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
G
N
H H
P
Pin 1 +
Pin 2 Pin 3 +
+
Case
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
MBR2535CT
MBR2545CT
MBR2550CT
MBR2560CT
Unit
VRRM
VRWM
VR
35
45
50
60
V
VR(RMS)
25
32
35
42
V
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 3)
IRRM
1.0
0.5
VFM
¾
¾
0.82
0.73
0.75
0.65
¾
IRM
0.2
40
1.0
50
Cj
750
Average Rectified Output Current
Forward Voltage Drop
@ TC = 130°C
@ IF = 15.0A, TC = 25°C
@ IF = 15.0A, TC = 125°C
@ IF = 30.0A, TC = 25°C
@ IF = 30.0A, TC = 125°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
A
V
¾
500
mA
pF
RqJC
1.5
°C/W
Tj, TSTG
-65 to +150
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. 2.0ms pulse width, f = 1.0KHz.
DS31036 Rev. D-2
1 of 2
MBR2535CT - MBR2560CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE RECTIFIED CURRENT (A)
30
24
18
12
6
0
0
50
100
Tj = 25°C
IF Pulse Width = 300µs
10
Tj = 150°C
Tj = 25°C
1.0
0.1
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
0.01
150
0.2
0.4
0.6
0.8
10000
150
Tj = 25°C
f = 1.0MHz
Cj, JUNCTION CAPACITANCE (pF)
8.3 ms single half-sine-wave
JEDEC method
100
50
10
100
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
DS31036 Rev. D-2
1000
100
0.1
0
1
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
2 of 2
MBR2535CT - MBR2560CT