ON MMBZ5232ELT3 Zener voltage regulator Datasheet

MMBZ5221ELT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:
•
•
•
•
•
•
•
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3
Cathode
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range − 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 s)
Pb−Free Packages are Available
1
Anode
3
1
2
SOT−23
CASE 318
STYLE 8
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx M
xxx = Specific Device Code
M = Date Code
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
Device
Package
Shipping†
225
1.8
mW
mW/°C
MMBZ52xxELT1
SOT−23
3000/Tape & Reel
556
°C/W
MMBZ52xxELT3*
SOT−23
10,000/Tape & Reel
Thermal Resistance −
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
RJA
PD
300
2.4
mW
mW/°C
Thermal Resistance −
Junction−to−Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−65 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
1
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*MMBZ5246EL, and MMBZ5252EL
Not Available in 10,000/Tape & Reel.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Publication Order Number:
MMBZ5221ELT1/D
MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
VZ VR
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 4)
VZ (V)
Zener Impedance
@ IZT
ZZT @ IZT
Leakage Current
ZZK @ IZK
IR @ VR
Device
Device
Marking
Min
Nom
Max
mA
mA
A
V
MMBZ5221ELT1G,T3G†
BE2
2.28
2.4
2.52
20
30
1200
0.25
100
1
MMBZ5226ELT1,T3
BE7
3.13
3.3
3.47
20
28
1600
0.25
25
1
MMBZ5228ELT1,T3
BE9
3.70
3.9
4.10
20
23
1900
0.25
10
1
MMBZ5229ELT1,T3
BF1
4.08
4.3
4.52
20
22
2000
0.25
5
1
MMBZ5230ELT1,T3
BF2
4.46
4.7
4.94
20
19
1900
0.25
5
2
MMBZ5231ELT1,T3
BF3
4.84
5.1
5.36
20
17
1600
0.25
5
2
MMBZ5232ELT1,T3
BF4
5.32
5.6
5.88
20
11
1600
0.25
5
3
MMBZ5234ELT1,T3
BF6
5.89
6.2
6.51
20
7
1000
0.25
5
4
MMBZ5235ELT1,T3
BF7
6.46
6.8
7.14
20
5
750
0.25
3
5
MMBZ5236ELT1,T3
BF8
7.12
7.5
7.88
20
6
500
0.25
3
6
MMBZ5237ELT1,T3
BF9
7.79
8.2
8.61
20
8
500
0.25
3
6.5
MMBZ5239ELT1,T3
BG2
8.65
9.1
9.55
20
10
600
0.25
3
7
MMBZ5240ELT1,T3
BG3
9.50
10
10.50
20
17
600
0.25
3
8
MMBZ5242ELT1,T3
BG5
11.40
12
12.60
20
30
600
0.25
1
9.1
MMBZ5243ELT1,T3
BG6
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
MMBZ5244ELT1,T3
BG7
13.30
14
14.70
9
15
600
0.25
0.1
10
MMBZ5245ELT1,T3
BG8
14.25
15
15.75
8.5
16
600
0.25
0.1
11
MMBZ5246ELT1*
BG9
15.20
16
16.80
7.8
17
600
0.25
0.1
12
MMBZ5248ELT1,T3
BH2
17.10
18
18.90
7
21
600
0.25
0.1
14
MMBZ5250ELT1,T3
BH4
19.00
20
21.00
6.2
25
600
0.25
0.1
15
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
†The “G’’ suffix indicates Pb−Free package available.
*Not Available in the 10,0000/Tape & Reel.
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2
MMBZ5221ELT1 Series
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 5)
Device
MMBZ5252ELT1*
VZ (V)
Zener Impedance
Leakage Current
@ IZT
ZZT @ IZT
Max
mA
mA
A
V
24
25.20
5.2
33
600
0.25
0.1
18
Device
Marking
Min
Nom
BH6
22.80
ZZK @ IZK
IR @ VR
MMBZ5253ELT1,T3
BH7
23.75
25
26.25
5
35
600
0.25
0.1
19
MMBZ5254ELT1,T3
BH8
25.65
27
28.35
4.6
41
600
0.25
0.1
21
MMBZ5255ELT1,T3
BH9
26.60
28
29.40
4.5
44
600
0.25
0.1
21
MMBZ5256ELT1,T3
BJ1
28.50
30
31.50
4.2
49
600
0.25
0.1
23
MMBZ5257ELT1,T3
BJ2
31.35
33
34.65
3.8
58
700
0.25
0.1
25
MMBZ5258ELT1,T3
BJ3
34.20
36
37.80
3.4
70
700
0.25
0.1
27
MMBZ5262ELT1,T3
BJ7
48.45
51
53.55
2.5
125
1100
0.25
0.1
37
MMBZ5263ELT1,T3
BJ8
53.20
56
58.80
2.2
150
1300
0.25
0.1
43
MMBZ5265ELT1
BK1
58.90
62
65.10
2
185
1400
0.25
0.1
47
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Not Available in the 10,0000/Tape & Reel.
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3
MMBZ5221ELT1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
6
5
4
VZ @ IZT
3
TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
VZ @ IZT
10
2
1
0
−1
−2
−3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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4
1.1
1.2
MMBZ5221ELT1 Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT ( A)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
100
10
1
+150°C
0.1
0.01
10
+25 °C
0.00
1
0.0001
1
1
−55 °C
0.00001
100
0
10
VZ, NOMINAL ZENER VOLTAGE (V)
10
Figure 5. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
10
1
10
1
0.1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
0.01
12
10
10
100
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 s
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
80
70
60
HALF VALUE IRSM/2 @ 20 s
50
40
30
tP
20
10
0
0
20
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
TA = 25°C
0.01
80
40
60
t, TIME (s)
Figure 9. 8 × 20 s Pulse Waveform
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5
80
90
MMBZ5221ELT1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBZ5221ELT1/D
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